A 3D semiconductor device, the device including: a first level including a first single crystal layer and first single crystal transistors; a first metal layer; a second metal layer disposed atop the first metal layer; second transistors disposed atop of the second metal layer; third transistors disposed atop of the second transistors, where at least one of the third transistors includes at least one replacement gate, being processed to replace a non-metal gate material with a metal based gate, and where a distance from at least one of the third transistors to at least one of the second transistors is less than 1 micron.

A method for producing a 3D memory device, the method including: providing a first level including a first single crystal layer; forming first alignment marks and control circuits in and on the first level, where the control circuits include first single crystal transistors, where the control circuits include at least two metal layers; forming at least one second level disposed on top of the first level; performing a first etch step within the second level; forming at least one third level disposed on top of the at least one second level; performing a second etch step within the third level; and performing additional processing steps to form a plurality of first memory cells within the second level and a plurality of second memory cells within the third level, where the first memory cells include second transistors, and where the second memory cells include third transistors.

A 3D semiconductor device, the device including: a first level including a first single crystal layer, the first level including first transistors, where the first transistors each include a single crystal channel; first metal layers interconnecting at least the first transistors; and a second level including a second single crystal layer, the second level including second transistors, where the second level overlays the first level, where the second level is bonded to the first level, where the bonded includes oxide to oxide bonds, where the second level includes an array of memory cells, and where each of the memory cells includes at least one recessed-channel-array-transistor (RCAT).

A nonvolatile memory device includes a cell array formed on a substrate, and a control gate pickup structure, wherein the cell array comprises floating gates, and a control gate surrounding the floating gates, wherein the control gate pickup structure comprises a floating gate polysilicon layer, a control gate polysilicon layer surrounding the floating gate polysilicon layer and connected to the control gate, and at least one contact plug formed on the control gate polysilicon layer.

A method for producing a 3D memory device, including: providing a first level including a single crystal layer and control circuits, the control circuits include a plurality of first single crystal transistors; forming at least one second level disposed above the first level; processing to form a plurality of second transistors, where the processing includes forming a plurality of memory cells, each of the plurality of memory cells includes at least one of the plurality of second transistors, where the control circuits control the plurality of memory cells, where at least one of the plurality of memory cells is at least partially atop a portion of the control circuits, where processing the control circuits accounts for a thermal budget associated with processing of the second transistors by adjusting annealing of the first transistors accordingly; processing to replace gate material of at least one of the plurality of second transistors.

An apparatus and a method for depositing a film layer that may have minimum contribution to overlay error after a sequence of deposition and lithographic exposure processes are provided. In one example, a method includes positioning a substrate on a substrate support in a process chamber, and flowing a deposition gas mixture comprising a silicon containing gas and a reacting gas to the process chamber through a showerhead having a convex surface facing the substrate support or a concave surface facing the substrate support in accordance with a stress profile of the substrate. A plasma is formed in the presence of the deposition gas mixture in the process chamber by applying an RF power to multiple coupling points of the showerhead that are symmetrically arranged about a center point of the showerhead. A deposition process is then performed on the substrate.

An electronic device that comprises bitlines and air gaps adjacent to an array region of an electronic device is disclosed. The bitlines comprise sloped sidewalls and a height of the air gaps is greater than a height of the bitlines. Additional electronic devices are disclosed, as are methods of forming an electronic device and related systems.

A semiconductor device, the device comprising: a plurality of transistors, wherein at least one of said plurality of transistors comprises a first single crystal source, channel, and drain, wherein at least one of said plurality of transistors comprises a second single crystal source, channel, and drain, wherein said second single crystal source, channel, and drain is disposed above said first single crystal source, channel, and drain, wherein at least one of said plurality of transistors comprises a third single crystal source, channel, and drain, wherein said third single crystal source, channel, and drain is disposed above said second single crystal source, channel, and drain, wherein at least one of said plurality of transistors comprises a fourth single crystal source, channel, and drain, and wherein said first single crystal channel is self-aligned to said second single crystal channel being processed following the same lithography step.

An object is to provide a semiconductor device with a novel structure in which stored data can be held even when power is not supplied and there is no limit on the number of write operations. The semiconductor device includes a first memory cell including a first transistor and a second transistor, a second memory cell including a third transistor and a fourth transistor, and a driver circuit. The first transistor and the second transistor overlap at least partly with each other. The third transistor and the fourth transistor overlap at least partly with each other. The second memory cell is provided over the first memory cell. The first transistor includes a first semiconductor material. The second transistor, the third transistor, and the fourth transistor include a second semiconductor material.

A non-volatile memory device includes a substrate, a plurality of memory blocks grouped into pages, each including an alternating layer stack on the substrate, a plurality of channel holes in the alternating layer stack, and strings of memory cells disposed along the plurality of channel holes, and at least one dummy block adjacent to the plurality of memory blocks, each including an alternating dummy layer stack having multiple conductive layers and multiple dielectric layers alternately laminated on one another on the substrate, the at least one dummy block is disposed at an outskirt of each of the pages of the plurality of memory blocks.