A display device includes two or more transistors in one pixel, and the two or more transistors include a first transistor of which a channel semiconductor layer is polycrystalline silicon, and a second transistor of which a channel semiconductor layer is an oxide semiconductor.

Provided are a thin film transistor (TFT) substrate, a display device, and a method of forming the TFT. A TFT substrate includes: a first TFT including: a polycrystalline semiconductor (PS) layer, a first gate electrode (GE) overlapping the PS layer, a nitride layer (NL) on the first GE, an oxide layer (OL) on the NL, and a first source electrode and a first drain electrode on the OL, and a second TFT including: a second GE on a same layer as the first GE, a hydrogen collecting layer between the second GE and the NL, an oxide semiconductor (OS) layer on the OL, a second source electrode and a second drain electrode contacting respective sides of the OS layer, wherein the first TFT and the second TFT are disposed on a same substrate, and wherein the NL includes an opening exposing the hydrogen collecting layer of the second TFT.

An area of a region arranged on one side out of a display region in a direction in which scanning signal lines extend is reduced. A display apparatus includes: a partial circuit; a plurality of scanning signal lines; and a plurality of scanning signal connection wirings for connecting the partial circuit and each of the plurality of scanning signal lines. Each of the plurality of scanning signal lines extends in an X-axis direction, and is arranged with a pitch in a Y-axis direction. A plurality of ends respectively included in the plurality of scanning signal connection wirings are connected to the partial circuit, and are arranged in the Y-axis direction. A distance in the Y-axis direction between the respective centers of the two ends adjacent to each other is narrower than the pitch.

Embodiments of the invention provide a display panel and a manufacturing method thereof, and a display device comprising such a display panel. At least one sensor is integrated into the display panel through a semiconductor process that is at least partially synchronously performed with processes of forming the array substrate and/or color filter substrate of the display panel, such that an integration level of the sensor on the display panel is increased and the process is simplified.

A semiconductor device and a method of manufacturing the semiconductor device are provided. The semiconductor device includes a semiconductor layer, a gate electrode on the semiconductor layer, a first insulating layer between the semiconductor layer and the gate electrode; a second insulating layer on the gate electrode, source and drain electrodes corresponding to both ends of the semiconductor layer and disposed on the second insulating layer, and a doping layer disposed along contact holes of the first and second insulating layers, which expose the both ends of the semiconductor layer, such as, between the both ends of the semiconductor layer and the source and drain electrodes.

The present invention provides a manufacture method of a LTPS thin film transistor and a LTPS thin film transistor. The gate isolation layer is first etched to form the recess, and then the gate is formed on the recess so that the width of the gate is slightly larger than the width of the recess. Then, the active layer is implemented with ion implantation to form the source contact region, the drain contact region, the channel region and one transition region at least located between the drain contact region and the channel region. The gate isolation layer above the transition region is thicker than the channel region and can shield a part of the gate electrical field to make the carrier density here lower than the channel region to form a transition.

The present disclosure relates to a LTPS TFT unit for liquid crystal modules and the manufacturing method thereof. The manufacturing method includes: forming a SiNx layer on a glass substrate; forming a SiOx layer and an a-Si layer on the SiNx layer in sequence; scanning the a-Si layer by laser beams to remove hydrogen within the a-Si layer; adopting excimer laser to re-crystallization anneal the a-Si layer to form the polysilicon layer; forming a gate insulation layer on the polysilicon layer; forming a gate on the gate insulation layer; and forming a drain insulation layer on the gate.

In one embodiment, a flexible device is provided. The flexible device may include a flexible substrate, a buffer layer, a light reflective layer, and a device layer. The buffer layer is located on the flexible substrate. The light reflective layer is located on the flexible substrate, wherein the light reflective layer has a reflection wavelength of 200 nm1100 nm, a reflection ratio of greater than 80%, and a stress direction of the light reflective layer is the same as a stress direction of the flexible substrate. The device layer is located on the light reflective layer and the buffer layer.

Embodiments of the present invention disclose a manufacturing method of a thin film transistor, a thin film transistor, an array substrate and a display device. The manufacturing method of a thin film transistor includes a step of forming an active layer, and the step of forming an active layer includes: forming a first poly-silicon layer and a second poly-silicon layer on the first poly-silicon layer separately, and adding dopant ions into the second poly-silicon layer and an upper surface layer of the first poly-silicon layer. By using the manufacturing method of a thin film transistor, defect states and unstable factors of interface in the thin film transistor can be reduced, thereby improving stability of the LTPS thin film transistor and obtaining an array substrate and a display device having more stable performance.

An organic light emitting display includes a pixel circuit to supply current to an organic light emitting device. The pixel circuit includes a switching transistor and a driving transistor. The switching transistor includes a first insulating layer between a first gate electrode and an oxide semiconductor layer. The driving transistor includes a second gate electrode on an active layer. The first insulating layer is between the active layer and the second gate electrode.