A photovoltaic device comprising a light harvesting device and a photovoltaic cell; wherein the light harvesting device comprises an organic semiconductor photoactive layer capable of multiple exciton generation with a luminescent material dispersed therein; wherein the bandgap of the luminescent material is selected such that the triplet excitons, formed as a result from the multiple exciton generation in the organic semiconductor, can be transferred from the organic semiconductor into the luminescent material non-radiatively via Dexter Energy Transfer; a photovoltaic cell disposed in an emissive light path of the luminescent material and having a first photoactive layer, wherein the bandgap of the luminescent material matches or is higher than the bandgap of the first photoactive layer.

The present invention relates to fluorescent, benzotriazole-containing dye compounds, which possess a high workability, desirable optical properties, and a good light stability, while suppressing the formation of a precipitate. The invention further relates to a wavelength-converting encapsulant layer, which is formed using the wavelength-converting encapsulant composition comprising said fluorescent, benzotriazole dye compounds. The fluorescent, benzotriazole-containing dye compounds are represented by general formula (I).

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wherein the variables are defined in the specification.

A method and a sensing device are provided. The sensing device may include a readout circuit, a bulk, a holding element and a heterojunction bipolar transistor; wherein heterojunction bipolar transistor is configured to generate detection signals responsive to a temperature of at least a portion of the heterojunction bipolar transistor; wherein the holding element is configured to support the heterojunction bipolar transistor; wherein the heterojunction bipolar transistor is thermally isolated from the bulk; wherein the readout circuit is electrically coupled to the heterojunction bipolar transistor; and wherein the readout circuit is configured to receive the detection signals and to process the detection signals to provide information about electromagnetic radiation that affected the temperature of the at least portion of the heterojunction bipolar transistor.

There is provided a quantum dot solar cell having a high optical absorption coefficient. The quantum dot solar cell includes a quantum dot layer 3 including a plurality of quantum dots 1, wherein the quantum dot layer 3 includes a first quantum dot layer 3A having an index /x of 5% or more, wherein x is an average particle size, and is a standard deviation. The quantum dot layer 3 also includes a second quantum dot layer 3B that is provided on the light entrance surface 3b and/or the light exit surface 3c of the first quantum dot layer 3A and has an average particle size and an index /x smaller than those of the first quantum dot layer 3A.

A material for photo-electric conversion has a multi-layered diamond-like film including an upper layer possessing electrical conductivity of one type and a lower layer possessing electrical conductivity of another different type, and a photo-electric converter is provided with this material and converts light into electric current.

A high efficiency configuration for a solar cell module comprises solar cells arranged in an overlapping shingled manner and conductively bonded to each other in their overlapping regions to form super cells, which may be arranged to efficiently use the area of the solar module.

A Tunnel Oxide Passivated Contact (TOPCon) solar cell, and a method therefor are provided. The TOPCon solar cell includes: a silicon substrate; a tunneling layer formed on a surface of the silicon substrate; a polycrystalline silicon layer formed on a surface of the tunneling layer; a polycrystalline germanium layer formed on a surface of the polycrystalline silicon layer; a lower passivation layer formed on a surface of the polycrystalline germanium layer; and a lower electrode formed on the lower passivation layer and electrically connected to the polycrystalline germanium layer.

This disclosure provides back contact cell and solar cell module. The back contact cell comprises a semiconductor substrate, the semiconductor substrate is provided with a front surface and a back surface opposite to each other, the back surface includes a plurality of adjacent and alternately arranged segment units, a segment space is formed between segment unit and the backlight surface; the segment space further includes a first space, a second space, a third space and a fourth space; a first passivation layer, located only in the first space in each segment space; a first doped semiconductor layer, located only in the first space in each segment space, and being adjacent to a side of the first passivation layer away from the semiconductor substrate; a second passivation layer, located only in the second spacethe fourth space in each segment space; and a second doped semiconductor layer located only in the second spacethe fourth space in each segment space, and being adjacent to a side of the second passivation layer away from the semiconductor substrate.

A graphene photodetector includes a first graphene absorption layer connected to first and second metal electrodes, the first and second metal electrodes defining a channel on the first graphene layer operating as a plasmonic waveguide, a gate dielectric layer interposed between the first graphene layer and a second graphene layer. The second graphene layer used for electrical gating and includes first and second gate electrodes proximate to the first and the second metal electrodes, respectively. The photodetector also includes a photonic dielectric waveguide with a planarized cladding underneath the gate dielectric layer, the first and second gate electrodes remaining interposed therebetween. The distance between the first and the second metal electrodes, defining the width of the channel cross-section, is between 100 nm and 600 nm, and the distance between the first and second gate electrodes is at least 60% of the distance between the first and second metal electrodes.

A solar cell includes a photoelectric conversion section that, includes an n-type crystal silicon substrate, a p-type silicon-based thin-film provided on a first principal surface, and an n-type silicon-based thin-film provided on a second principal surface, and further includes a first electrode layer on the p-type silicon-based thin-film, and a second electrode layer on the n-type silicon-based thin film. A patterned collector electrode is provided on the first electrode layer. On the first principal surface of the photoelectric conversion section, a wraparound portion of the second electrode layer, an insulating region where neither the first electrode layer nor the second electrode layer is provided, and a first electrode layer-formed region are arranged in this order from a peripheral end.