A semiconductor pressure sensor includes n-type semiconductor regions, which are formed in a diaphragm of a semiconductor substrate, piezoresistive elements, which are respectively formed in the n-type semiconductor regions, and conductive shielding thin film layers, which are respectively formed on the piezoresistive elements through an insulating thin film layer, and the piezoresistive elements form a Wheatstone bridge circuit. Further, the n-type semiconductor regions and the conductive shielding thin film layers are electrically connected to each other through contacts formed in the diaphragm.

Described herein are polymer complexes, including polymer gels and polymer foams, containing electrically conductive polymers and ionic liquids. The polymer complexes described herein are useful as components of electronic devices.

A method of controlling a Casimir-effect device includes applying a voltage to a field-effect gate of the Casimir-effect device. The Casimir-effect device includes a conducting material and a semiconductor. The conducting material and semiconductor are separated by a gap to form the field-effect gate over at least a portion of the semiconductor facing the gap. The method further includes altering, in response to the applied voltage, a density of free charge carriers in the portion of the semiconductor facing the gap to control a nanoscale Casimir force between the conducting material and the portion of the semiconductor facing the gap.

The present disclosure provides a piezoelectric film sensor, a piezoelectric film sensor circuit and methods for manufacturing the same. The method for manufacturing the piezoelectric film sensor comprises: a step of forming a piezoelectric film on a substrate, and a step of subjecting the piezoelectric film to laser annealing using a laser annealing process so as to complete phase-forming transition of the piezoelectric film. Since the annealing temperature in the laser annealing process can be controlled in a range of 300 C. to 400 C., the manufacturing process can be not only applied to ensure a good performance of a piezoelectric film, but also can be used for manufacturing a flexible piezoelectric film sensor.

An angular acceleration sensor includes a planar surface extending along an X-Y plane, a fixed portion, a weight, a beam, and piezoresistors. The weight is supported by the fixed portion. The beam extends along a Y-axis and is connected to the fixed portion and the weight. A width of the beam in an X-axis direction is larger than a width of the connection portion at which the beam is connected to the fixed portion.

According to an embodiment, a MEMS device includes a deflectable membrane including a first plurality of electrostatic comb fingers, a first anchor structure including a second plurality of electrostatic comb fingers interdigitated with a first subset of the first plurality of electrostatic comb fingers, and a second anchor structure including a third plurality of electrostatic comb fingers interdigitated with a second subset of the first plurality of electrostatic comb fingers. The second plurality of electrostatic comb fingers are offset from the first plurality of electrostatic comb fingers in a first direction and the third plurality of electrostatic comb fingers are offset from the first plurality of electrostatic comb fingers in a second direction, where the first direction is different from the second direction.

Input devices are provided. In accordance with an example embodiment, an input device includes an interface layer that flexes in response to pressure, a plurality of sense electrodes, a dielectric between the sense electrodes and the interface layer, and interconnecting circuitry. The dielectric compresses or expands in response to movement of the interface layer, and exhibits dielectric characteristics that vary based upon a state of compression of the dielectric. The interconnecting circuitry is to the sense electrodes and provides an output indicative of both the position of each sense electrode and an electric characteristic at each sense electrode that provides an indication of pressure applied to the dielectric adjacent the respective sense electrodes.

Nanoelectromechanical (NEMS) devices having nanomagnets for an improved range of operating voltages and improved control of dimensions of a cantilever are described. For example, in an embodiment, a nanoelectromechanical (NEMS) device includes a substrate layer, a first magnetic layer disposed above the substrate layer, a first dielectric layer disposed above the first magnetic layer, a second dielectric disposed above the first dielectric layer, and a cantilever disposed above the second dielectric layer. The cantilever bends from a first position to a second position towards the substrate layer when a voltage is applied to the cantilever.

Methods to utilize piezoelectric materials as a gate dielectric in RBTs in an IC device to generate and sense higher frequency signals with high Qs and resulting devices are disclosed. Embodiments include forming, on an upper surface of a semiconductor layer, RBTs comprising even multiples of sensing RBTs and driving RBTs, each RBT including a piezoelectric gate dielectric layer, a gate, and a dielectric spacer on opposite sides of the piezoelectric gate dielectric layer and gate, wherein at least one pair of sensing RBTs is directly between two groups of driving RBTs; forming metal layers, separated by interlayer dielectric layers, above the RBTs; and forming vias through a dielectric layer above the RBTs connecting the RBTs to a metal layer.

A pressure sensor device that includes: a base substrate; a detecting element mounted on an upper surface of the base substrate and that includes a detecting portion that detects pressure; a resin package on the upper surface of the base substrate and that has an exposure hole that exposes the detecting portion, the detecting element being embedded in the resin package; and an on-off valve disposed so as to close the exposure hole, the on-off valve including: a membrane having an outer surface facing an outside of the pressure sensor device, and a communication path that is partly formed by an inner surface of the membrane and allows the detecting portion to communicate with the outside of the pressure sensor device, the inner surface being opposite the outer surface, and wherein the inner surface closes the communication path when the membrane is flexed by pressure acting upon the outer surface.