A load sensor is constituted by a rib and a vertical transistor including an organic semiconductor film, and a load measurement can be executed based on a change of a gap between a drain electrode and a source electrode which is a channel length of the vertical transistor. Therefore, a change of a current Ids is in a linear relationship to a load applied to the load sensor.

A three-dimensional printing technique can be used to form a microphone package. The microphone package can include a housing having a first side and a second side opposite the first side. A first electrical lead can be formed on an outer surface on the first side of the housing. A second electrical lead can be formed on an outer surface on the second side of the housing. The first electrical lead and the second electrical lead may be electrically shorted to one another. Further, vertical and horizontal conductors can be monolithically integrated within the housing.

Provided is a hybrid diode device. The hybrid diode device includes a first lower nitride layer disposed on a substrate and including a first 2-dimensional electron gas (2DEG) layer, a second lower nitride layer extending from the first lower nitride layer to the outside of the substrate and including a second 2DEG layer, a first upper nitride layer disposed on the first lower nitride layer, a second upper nitride layer disposed on the second lower nitride layer, a first cap layer disposed on the first upper nitride layer, a second cap layer disposed on the second upper nitride layer, a first electrode structure connected to the first lower nitride layer and the first cap layer; and a second electrode structure connected to the second lower nitride layer and the first electrode structure. The second lower nitride layer generates electric energy through dynamic movement.

The present invention provides a contact electrification effect-based back gate field-effect transistor. The back gate field-effect transistor includes: a conductive substrate; an insulating layer formed on a front face of the conductive substrate; a field-effect transistor assembly including: a channel layer, a drain and a source, and a gate; and a triboelectric nanogenerator assembly including: a static friction layer formed at a lower surface of the gate, a movable friction layer disposed opposite to the static friction layer and separated by a preset distance, and a second electro-conductive layer formed at an outside of the movable friction layer and being electrically connected to the source; wherein, the static friction layer and the movable friction layer are made of materials in different ratings in triboelectric series, and the static friction layer and the movable friction layer are switchable between a separated state and a contact state under the action of an external force.

Spin switch devices with voltage controlled magnetism in ultra-low power usage applications are disclosed. The spin switch devices may be configured to provide ultra-low power and ultra-high speed switching by directly controlling drain or gate electron spins via electric field induced magnetic anisotropy tuned with finite gate voltage. A lateral spin switch with voltage controlled magnetic drain is placed in an OFF or an ON state by controlling the gate voltage to be equal to 0 or greater than 0 volts respectively. A vertical spin switch with voltage controlled magnetic gate is placed in an OFF or an ON state by controlling a value of the gate voltage to be less than a threshold voltage or greater than the threshold voltage respectively. A voltage controlled complementary switch provides a very large gain by controlling a value of the gate voltage to be equal to 0 volts.

A support apparatus includes a force sensing array positioned thereon that includes multiple layers of material that are arranged to define an elastically stretchable sensing sheet. The sensing sheet may be placed underneath a patient to detect interface forces or pressures between the patient and the support structure that the patient is positioned on. The force sensing array includes a plurality of force sensors. The force sensors are defined where a row conductor and a column conductor approach each other on opposite sides of a force sensing material, such as a piezoresistive material. In order to reduce electrical cross talk between the plurality of sensors, a semiconductive material is included adjacent the force sensing material to create a PN junction with the force sensing material. This PN junction acts as a diode, limiting current flow to essentially one direction, which, in turn, reduces cross talk between the multiple sensors.

The present invention relates to a sensor that uses a sensing mechanism having a combined static charge and a field effect transistor, the sensor including: a substrate; source and drain units formed on the substrate and separated from each other; a channel unit interposed between the source and drain units; a membrane separated from the channel unit, disposed on a top portion and displaced in response to an external signal; and a static charge member formed on a bottom surface of the membrane separately from the channel unit and generating an electric field. Accordingly, since the sensor using a sensing mechanism having a combined static charge and a field effect transistor according to an embodiment of the present invention can measure the displacement or movement of the sensor by measuring a change of the electric field of the channel unit of the field effect transistor by using a static member, the electric field can be formed so as to be proportional to an amount of charge and inversely proportional to a squared distance regardless of the intensity and distribution of an external electric field. Therefore, sensitivity is improved without being affected by an external electric field.

A fabricated electromechanical device is disclosed herein. An exemplary device includes, a substrate, at least one layer of a high-transconductance material separated from the substrate by a dielectric medium, a first electrode in electrical contact with the at least one layer of a high-transconductance material and separated from the substrate by at least one first supporting member, a second electrode in electrical contact with the layer of a high-transconductance material and separated from the substrate by at least one second supporting member, where the first electrode is electrically separate from the second electrode, and a third electrode separated from the at least one layer of high-transconductance material by a dielectric medium and separated from each of the first electrode and the second electrode by a dielectric medium.

An assembly of a MEMS sensor device envisages: a first die, integrating a micromechanical detection structure and having an external main face; a second die, integrating an electronic circuit operatively coupled to the micromechanical detection structure, electrically and mechanically coupled to the first die and having a respective external main face. Both of the external main faces of the first die and of the second die are set in direct contact with an environment external to the assembly, without interposition of a package.

According to an embodiment, a MEMS device includes a deflectable membrane including a first plurality of electrostatic comb fingers, a first anchor structure including a second plurality of electrostatic comb fingers interdigitated with a first subset of the first plurality of electrostatic comb fingers, and a second anchor structure including a third plurality of electrostatic comb fingers interdigitated with a second subset of the first plurality of electrostatic comb fingers. The second plurality of electrostatic comb fingers are offset from the first plurality of electrostatic comb fingers in a first direction and the third plurality of electrostatic comb fingers are offset from the first plurality of electrostatic comb fingers in a second direction, where the first direction is different from the second direction.