A display device includes a first electrode, a second electrode spaced apart from the first electrode and facing the first electrode, a first insulating layer disposed to at least partially cover the first electrode and the second electrode, a second insulating layer disposed on at least a part of the first insulating layer, and a light-emitting element disposed on the second insulating layer between the first electrode and the second electrode, wherein at least a part of a lower surface of the light-emitting element is chemically bonded to the second insulating layer.

Semiconductor structures and methods for forming those semiconductor structures are disclosed. For example, a semiconductor structure with a p-type superlattice region, an i-type superlattice region, and an n-type superlattice region is disclosed. The semiconductor structure can have a polar crystal structure with a growth axis that is substantially parallel to a spontaneous polarization axis of the polar crystal structure. In some cases, there are no abrupt changes in polarisation at interfaces between each region. At least one of the p-type superlattice region, the i-type superlattice region and the n-type superlattice region can comprise a plurality of unit cells exhibiting a monotonic change in composition from a wider band gap (WBG) material to a narrower band gap (NBG) material or from a NBG material to a WBG material along the growth axis to induce p-type or n-type conductivity.

Provided is a nanowire array, in which a plurality of nanowires are densely packed and in contact with each other via side walls to form a three-dimensional, compact layer structure, wherein the plurality of nanowires are formed from InGaN-based material. Also provided is an optoelectronic device comprising the nanowire array which is epitaxially grown on a surface of a substrate (12). Further provided are methods for preparing the nanowire array and the optoelectronic device.

A display device includes a first electrode and a second electrode disposed on a substrate and spaced apart from each other in a first direction. A light emitting element is disposed between the first electrode and the second electrode. A third electrode is disposed on the first electrode and electrically contacts an end portion of the light emitting element. A fourth electrode is disposed on the second electrode and electrically contacts another end portion of the light emitting element. A side of the third electrode and a side of the first electrode are located on a first virtual line substantially perpendicular to the substrate. A side of the fourth electrode facing the side of the third electrode and the side of the second electrode are located on a second virtual line substantially perpendicular to the substrate.

A method for making a device. The method comprises forming a buffer layer on a substrate; forming a periodically doped layer on the buffer layer; forming one or more wires on the periodically doped layer, the wires being chosen from nanowires and microwires; and introducing porosity into the periodically doped layer to form a porous distributed Bragg reflector (DBR). Various devices that can be made by the method are also disclosed.

A semiconductor structure includes a superlattice with two or more unit cells, wherein each of the unit cells includes: a first epitaxial layer including NiO; and a second epitaxial layer including a second epitaxial oxide material. In some cases, the semiconductor structure can include: a first region including p-type conductivity, wherein the first region includes the superlattice; a second region including an epitaxial oxide material; and a third region including an epitaxial oxide material, wherein the second region is located between the first region and the third region along a growth direction.

A method of producing a light emitting diode (LED) array comprises: forming a plurality of layers of semiconductor material; forming a dielectric mask layer over the plurality of layers, the dielectric mask layer having an array of holes through it each exposing an area of one of the layers of semiconductor material, and growing an LED structure in each of the holes arranged to emit light over a range of wavelengths. At least some of the plurality layers form a distributed Bragg reflector (DBR) arranged to reflect light of at least some of said range of wavelengths.

A nanowire device and a method of forming a nanowire device that is poised for pick up and transfer to a receiving substrate are described. In an embodiment, the nanowire device includes a base layer and a plurality of nanowires on and protruding away from a first surface of the base layer. An encapsulation material laterally surrounds the plurality of nanowires in the nanowire device, such that the nanowires are embedded within the encapsulation material.

The current distribution across the p-layer (130) of a semiconductor device is modified by purposely inhibiting current flow through the p-layer (130) in regions (310) adjacent to the guardsheet (150), without reducing the optical reflectivity of any part of the device. This current flow may be inhibited by increasing the resistance of the p-layer that is coupled to the p-contact (140) along the edges and in the corners of contact area. In an example embodiment, the high-resistance region (130) is produced by a shallow dose of hydrogen-ion (H+) implant after the p-contact (140) is created. Similarly, a resistive coating may be applied in select regions between the p-contact and the p-layer.

The optoelectronic device (1) comprises a substrate (2), a light-emitting member (3) comprising an elongate element (4) extending in a direction forming an angle with the substrate (2). An intermediate element (5) is interposed between the substrate (2) and a longitudinal end of the elongate element (4) closest to the substrate (2). Furthermore, the substrate (2) is transparent to said light and the intermediate element (5), transparent to said light, comprises at least one nitride of a transition metal, and has a thickness less than or equal to 9 nm.