Proposed is an X-ray detector including first and second electrodes on a substrate, and a photoconductor layer provided between the first electrode and the second electrode and configured to contain perovskite, wherein the photoconductor layer may include a first photoconductive layer made of a first perovskite with a columnar crystal structure, and a second photoconductive layer provided on the first photoconductive layer, and made of a second perovskite with a cubic crystal structure.

Solid-state radiation detectors utilizing a film as an alpha detection layer are provided. The detector can include a neutron conversion layer disposed thereon to enable neutron detection. The film can detect alpha particles from the ambient environment or emitted by the neutron conversion layer (if present) so the device can detect alpha particles and/or neutrons. The film can generate electron-hole pairs and can be disposed near a semiconductor material. The film can have a thickness of, for example, at least 100 nanometers.

Solid-state radiation detectors utilizing a film as an alpha detection layer are provided. The detector can include a neutron conversion layer disposed thereon to enable neutron detection. The film can detect alpha particles from the ambient environment or emitted by the neutron conversion layer (if present) so the device can detect alpha particles and/or neutrons. The film can generate electron-hole pairs and can be disposed near a semiconductor material. The film can have a thickness of, for example, at least 100 nanometers.

A device includes a plurality of photodiode regions within a semiconductor substrate, a plurality of transistors over a front-side surface of the semiconductor substrate, a plurality of deep trench isolation (DTI) structures extending a first depth from a backside surface of the semiconductor substrate into the semiconductor substrate, and a plurality of isolation structures extending a second depth from the backside surface of the semiconductor substrate into the semiconductor substrate. The second depth is less than the first depth. One of the plurality of isolation structures has a quadrilateral outline on the backside surface of the semiconductor substrate. The isolation structure includes two triangular surfaces and two rectangular surfaces respectively extending from four sides of the quadrilateral outline.

A device includes a plurality of photodiode regions within a semiconductor substrate, a plurality of transistors over a front-side surface of the semiconductor substrate, a plurality of deep trench isolation (DTI) structures extending a first depth from a backside surface of the semiconductor substrate into the semiconductor substrate, and a plurality of isolation structures extending a second depth from the backside surface of the semiconductor substrate into the semiconductor substrate. The second depth is less than the first depth. One of the plurality of isolation structures has a quadrilateral outline on the backside surface of the semiconductor substrate. The isolation structure includes two triangular surfaces and two rectangular surfaces respectively extending from four sides of the quadrilateral outline.

Techniques for enhancing the absorption of photons in semiconductors with the use of microstructures are described. The microstructures, such as pillars and/or holes, effectively increase the effective absorption length resulting in a greater absorption of the photons. Using microstructures for absorption enhancement for silicon photodiodes and silicon avalanche photodiodes can result in bandwidths in excess of 10 Gb/s at photons with wavelengths of 850 nm, and with quantum efficiencies of approximately 90% or more.

Provided are a light-receiving element which has more capability of detecting wavelengths than that of existing silicon light-receiving elements and a unit pixel of an image sensor by using it. The light-receiving element includes: a light-receiving unit which is floated or connected to external voltage and absorbs light; an oxide film which is formed to come in contact with a side of the light-receiving unit; a source and a drain which stand off the light-receiving unit with the oxide film in between and face each other; a channel which is formed between the source and the drain and forms an electric current between the source and the drain; and a wavelength expanding layer which is formed in at least one among the light-receiving unit, the oxide film and the channel and forms a plurality of local energy levels by using strained silicon.

Provided are a light-receiving element which has more capability of detecting wavelengths than that of existing silicon light-receiving elements and a unit pixel of an image sensor by using it. The light-receiving element includes: a light-receiving unit which is floated or connected to external voltage and absorbs light; an oxide film which is formed to come in contact with a side of the light-receiving unit; a source and a drain which stand off the light-receiving unit with the oxide film in between and face each other; a channel which is formed between the source and the drain and forms an electric current between the source and the drain; and a wavelength expanding layer which is formed in at least one among the light-receiving unit, the oxide film and the channel and forms a plurality of local energy levels by using strained silicon.

A semiconductor light-receiving device (100) of the present disclosure includes: a semiconductor substrate (1); an n-type buffer layer (2) formed above the semiconductor substrate (1); a multiplication layer (3) formed above the n-type buffer layer (2); a p-type electric field control layer (4) formed above the multiplication layer (3); and a light absorption layer (5) formed above the p-type electric field control layer (4), wherein any one, any two, or three of the n-type buffer layer (2), the multiplication layer (3), and the p-type electric field control layer (4) are composed of a digital alloy structure.

A semiconductor light-receiving device (100) of the present disclosure includes: a semiconductor substrate (1); an n-type buffer layer (2) formed above the semiconductor substrate (1); a multiplication layer (3) formed above the n-type buffer layer (2); a p-type electric field control layer (4) formed above the multiplication layer (3); and a light absorption layer (5) formed above the p-type electric field control layer (4), wherein any one, any two, or three of the n-type buffer layer (2), the multiplication layer (3), and the p-type electric field control layer (4) are composed of a digital alloy structure.