There is room for improvement in the quality of diamond crystals used in radiation detectors produced using the conventional hetero-epitaxial method. The diamond crystal used for the radiation detector according to the present invention: is heteroepitaxially grown by means of chemical vapor deposition on a substrate comprising a material other than the diamond and having a plane orientation inclined by a predetermined off-angle from a just plane orientation; and has a crystallinity such that the full width half maximum of the diffraction peak of the (004) plane of the X-ray diffractometry represents a value shorter than or equal to 200 seconds.

There is room for improvement in the quality of diamond crystals used in radiation detectors produced using the conventional hetero-epitaxial method. The diamond crystal used for the radiation detector according to the present invention: is heteroepitaxially grown by means of chemical vapor deposition on a substrate comprising a material other than the diamond and having a plane orientation inclined by a predetermined off-angle from a just plane orientation; and has a crystallinity such that the full width half maximum of the diffraction peak of the (004) plane of the X-ray diffractometry represents a value shorter than or equal to 200 seconds.

Disclosed is an infrared detecting device with a high SNR. The infrared detecting device includes a semiconductor substrate; a first layer formed on the semiconductor substrate and having a first conductivity type; a light receiving layer formed on the first layer; and a second layer formed on the light receiving layer and having a second conductivity type. The first layer includes, in the stated order: a layer containing Al.sub.x(1)In.sub.1-x(1)Sb; a layer having a film thickness t.sub.y(1) in nanometers and containing Al.sub.y(1)In.sub.1-y(1)Sb; and a layer containing Al.sub.x(2)In.sub.1-x(2)Sb, where t.sub.y(1), x(1), x(2), and y(1) satisfy the following relations: for j=1, 2, 0<t.sub.y(1)2360(y(1)x(j))240 (0.11y(1)x(j)0.19), 0<t.sub.y(1)1215(y(1)x(j))+427 (0.19<y(1)x(j)0.33), and 0<x(j)<0.18.

Disclosed is an infrared detecting device with a high SNR. The infrared detecting device includes a semiconductor substrate; a first layer formed on the semiconductor substrate and having a first conductivity type; a light receiving layer formed on the first layer; and a second layer formed on the light receiving layer and having a second conductivity type. The first layer includes, in the stated order: a layer containing Al.sub.x(1)In.sub.1-x(1)Sb; a layer having a film thickness t.sub.y(1) in nanometers and containing Al.sub.y(1)In.sub.1-y(1)Sb; and a layer containing Al.sub.x(2)In.sub.1-x(2)Sb, where t.sub.y(1), x(1), x(2), and y(1) satisfy the following relations: for j=1, 2, 0<t.sub.y(1)2360(y(1)x(j))240 (0.11y(1)x(j)0.19), 0<t.sub.y(1)1215(y(1)x(j))+427 (0.19<y(1)x(j)0.33), and 0<x(j)<0.18.

Provided are a light-receiving element which has more capability of detecting wavelengths than that of existing silicon light-receiving elements and a unit pixel of an image sensor by using it. The light-receiving element includes: a light-receiving unit which is floated or connected to external voltage and absorbs light; an oxide film which is formed to come in contact with a side of the light-receiving unit; a source and a drain which stand off the light-receiving unit with the oxide film in between and face each other; a channel which is formed between the source and the drain and forms an electric current between the source and the drain; and a wavelength expanding layer which is formed in at least one among the light-receiving unit, the oxide film and the channel and forms a plurality of local energy levels by using strained silicon.

Provided are a light-receiving element which has more capability of detecting wavelengths than that of existing silicon light-receiving elements and a unit pixel of an image sensor by using it. The light-receiving element includes: a light-receiving unit which is floated or connected to external voltage and absorbs light; an oxide film which is formed to come in contact with a side of the light-receiving unit; a source and a drain which stand off the light-receiving unit with the oxide film in between and face each other; a channel which is formed between the source and the drain and forms an electric current between the source and the drain; and a wavelength expanding layer which is formed in at least one among the light-receiving unit, the oxide film and the channel and forms a plurality of local energy levels by using strained silicon.

The present disclosure, in some embodiments, relates to a method of forming an integrated chip. The method includes forming a masking layer on a first side of a substrate. A first etching process is performed on the first side of the substrate with the masking layer in place. The masking layer is removed. A second wet etching process is performed on the first side of the substrate after removing the masking layer. The first etching process and the second wet etching process collectively form a plurality of topographical features respectively having a triangular shape in a cross-section.

An optoelectronic device includes a thin film of a transition-metal dichalcogenide, a first electrode made of a first metal directly contacting the thin film, and a second electrode made of a second metal directly contacting the thin film. The first metal is molybdenum, titanium, aluminum, tantalum, scandium, or yttrium. The second metal is platinum, nickel, palladium, gold, or cobalt. Depending on the type and doping of the transition-metal dichalcogenide, one of the first and second metals forms an electron selective layer with the transition-metal dichalcogenide and the other of the first and second metals forms a hole selective layer with the transition-metal dichalcogenide. The thin film may be a monolayer or multilayer. The transition-metal dichalcogenide may be molybdenum disulfide. The thin film may be grown via chemical vapor deposition and have an area of 0.25 cm.sup.2 or more.

The present disclosure, in some embodiments, relates to an integrated chip. The integrated chip includes a semiconductor substrate having sidewalls forming one or more trenches on opposing sides of an optical absorption region. One or more dielectrics are disposed within the one or more trenches. The semiconductor substrate includes a plurality of angled surface segments arranged laterally between the one or more trenches and a curved surface between neighboring ones of the plurality of angled surface segments. Lines extending along the neighboring ones of the plurality of angled surface segments intersect at a point that is a non-zero distance above or below the curved surface.

A touch screen panel using a thin film transistor (TFT) photodetector includes a touch panel including at least one unit pattern for sensing light reflected by a touch by using a TFT photodetector including an active layer formed of amorphous silicon or polycrystalline silicon on an amorphous transparent material, and a controller configured to scan the at least one unit pattern and read touch coordinates as a result of the scanning.