A touch screen panel using a thin film transistor (TFT) photodetector includes a touch panel including at least one unit pattern for sensing light reflected by a touch by using a TFT photodetector including an active layer formed of amorphous silicon or polycrystalline silicon on an amorphous transparent material, and a controller configured to scan the at least one unit pattern and read touch coordinates as a result of the scanning.

The technology disclosed herein is based on a novel multilayer material having a plurality of internal charge dipoles and in-plane conductivity.

An image sensor and a method for forming the image sensor are provided. The method includes: providing a substrate; patterning the substrate to form a plurality of columnar structures configured in an array, wherein a first trench, a second trench, and a third trench are configured between adjacent columnar structures and respectively along a first direction, a second direction, and a third direction, side walls of the columnar structures perpendicular to the first direction are (110) crystal faces, and oblique sections of the columnar structures perpendicular to the third direction are (100) crystal faces; and forming a doped epitaxial layer in the first trench, the second trench and the cross trench. Therefore, for the image sensor, an upper part of the cross trench is improved with little defects after the cross trench is full filled, which can effectively reduce white pixels and thus improve the performance of the image sensor.

An image sensor and a method for forming the image sensor are provided. The method includes: providing a substrate; patterning the substrate to form a plurality of columnar structures configured in an array, wherein a first trench, a second trench, and a third trench are configured between adjacent columnar structures and respectively along a first direction, a second direction, and a third direction, side walls of the columnar structures perpendicular to the first direction are (110) crystal faces, and oblique sections of the columnar structures perpendicular to the third direction are (100) crystal faces; and forming a doped epitaxial layer in the first trench, the second trench and the cross trench. Therefore, for the image sensor, an upper part of the cross trench is improved with little defects after the cross trench is full filled, which can effectively reduce white pixels and thus improve the performance of the image sensor.

A display panel includes a display pixel configured to irradiate light, an image sensor pixel included together with the display pixel in one unit pixel, including a thin film transistor (TFT) photodetector including an active layer formed of amorphous silicon or polycrystalline silicon on an amorphous transparent material, and configured to collect light reflected from a body located on the transparent material, and a processor configured to process biometrics along with positioning of the body according to the light reflected from the body.

A display panel includes a display pixel configured to irradiate light, an image sensor pixel included together with the display pixel in one unit pixel, including a thin film transistor (TFT) photodetector including an active layer formed of amorphous silicon or polycrystalline silicon on an amorphous transparent material, and configured to collect light reflected from a body located on the transparent material, and a processor configured to process biometrics along with positioning of the body according to the light reflected from the body.

The present invention discloses a solar-blind AlGaN ultraviolet (UV) photodetector and a preparation method thereof. The solar-blind AlGaN UV photodetector comprises an UV photodetector epitaxial wafer, including an undoped N-polar plane AlN buffer layer, a carbon-doped N-polar plane AlN layer, a carbon-doped N-polar plane composition-graded Al.sub.yGa.sub.1-yN layer, and an undoped N-polar plane Al.sub.xGa.sub.1-xN layer that are grown sequentially on a silicon substrate, and also comprises an insulating layer, an ohmic contact electrode, and a Schottky contact electrode arranged on the UV photodetector epitaxial wafer, as well as a SiN.sub.z passivation layer arranged on both sides of the UV photodetector epitaxial wafer, where x=0.5-0.8, y=0.75-0.95, and z=1.33-1.5. The present invention realizes the preparation of the high-performance solar-blind AlGaN UV photodetector, and improves the responsivity and detectivity of the AlGaN UV photodetector' in the UV solar-blind band.

A display panel includes a display pixel configured to irradiate light, an image sensor pixel included together with the display pixel in one unit pixel, including a thin film transistor (TFT) photodetector including an active layer formed of amorphous silicon or polycrystalline silicon on an amorphous transparent material, and configured to collect light reflected from a body located on the transparent material, and a processor configured to process biometrics along with positioning of the body according to the light reflected from the body.

A display panel includes a display pixel configured to irradiate light, an image sensor pixel included together with the display pixel in one unit pixel, including a thin film transistor (TFT) photodetector including an active layer formed of amorphous silicon or polycrystalline silicon on an amorphous transparent material, and configured to collect light reflected from a body located on the transparent material, and a processor configured to process biometrics along with positioning of the body according to the light reflected from the body.

A touch screen panel using a thin film transistor (TFT) photodetector includes a touch panel including a plurality of unit patterns for sensing light reflected by a touch by using a TFT photodetector including an active layer formed of amorphous silicon or polycrystalline silicon on an amorphous transparent material, and a controller configured to scan the plurality of unit patterns and read touch coordinates as a result of the scanning.