An FFS array substrate and a liquid crystal display device having the same are disclosed. The FFS array substrate includes a substrate, first metal layer, a first insulated layer, a second metal layer, a second insulated layer, a transparent electrode layer, a third insulated layer and a common-electrode layer. The common-electrode layer includes a common-electrode line having a low resistivity and a transparent common electrode. The FFS array substrate ensures the stability of electrical potential on common electrode and enhances the display effect of the liquid crystal display device.

A thin film transistor array panel device comprises: a base substrate; a barrier layer disposed over the base substrate and comprising a plurality of transparent material layers; and an array of thin film transistors disposed over the barrier layer. A difference between a refractive index of the barrier layer and a refractive index of the base substrate may be within about 6%. The transparent material layers may be arranged such that the transparent material layers having compressive residual stress and the transparent material layers having tensile residual stress are alternately stacked. Each of the transparent material layers may comprise silicon oxynitride (SiON).

A method for manufacturing an array substrate is disclosed and includes steps of: sequentially forming a first metal layer, an insulating layer and a second metal layer on a glass substrate; forming a passivation layer on the second metal layer; performing a first etching process on the passivation layer to obtain a first groove and a second groove; performing a second etching process on the passivation layer to obtain a third groove; and forming a pixel electrode layer on the passivation layer. The method saves one photomask and a photolithography step, thereby reducing the cost and improving the efficiency.

The present invention provides a TFT substrate and method for manufacturing the same. The method comprises the steps of: providing a substrate; forming a TFT structure above the substrate; further forming a color resist layer above the substrate, and forming a first opening area in the color resist layer at a location corresponding to the TFT structure; forming a first black matrix in the first opening area such that the TFT structure is covered by the first black matrix; and forming a pixel electrode above the color resist layer and the first black matrix, and the pixel electrode being electrically coupled to the TFT structure through the first black matrix. By applying the method described above, the present invention is sufficient to shield the light and reduce the light transmittance effect when the panel comprising the TFT substrate is bent, such that the contrast of the panel can be improved.

A display is disclosed. The display includes a display panel including pixel units in an image-displaying region. Each of the pixel units includes an AND gate and a pixel electrode electrically connected to an output terminal of the AND gate.

To provide a semiconductor device in which a layer to be peeled is attached to a base having a curved surface, and a method of manufacturing the same, and more particularly, a display having a curved surface, and more specifically a light-emitting device having a light emitting element attached to a base with a curved surface. A layer to be peeled, which contains a light emitting element furnished to a substrate using a laminate of a first material layer which is a metallic layer or nitride layer, and a second material layer which is an oxide layer, is transferred onto a film, and then the film and the layer to be peeled are curved, to thereby produce a display having a curved surface.

A method for fabricating a display device is provided. A laser having a power density is provided to a substrate coupling body. The substrate coupling body includes a first substrate and a second substrate coupled to the first substrate. The second substrate is separated from the first substrate. An optical property of the first substrate separated from the second substrate is measured. The power density of the laser is adjusted based on the optical property of the first substrate.

The present application discloses a flexible array substrate comprising a flexible display portion comprising a plurality of first signal lines and a plurality of second signal lines intersecting each other; a flexible circuit bonding portion abutting the flexible display portion for bonding circuit parts; and a plurality of first connection lines for transmitting first signals to the plurality of first signal lines. Each of the plurality of first connection lines connects with a corresponding first signal line, and extends from the flexible display portion to the flexible circuit bonding portion. Each of the plurality of first connection lines crosses over at least one other first signal line within the flexible display portion.

An organic light emitting display device is discussed. The organic light emitting display device according to an embodiment includes a base substrate, a buffer layer disposed on the base substrate, and a thin film transistor disposed on the buffer layer. The organic light emitting display device further includes an organic light emitting diode connected to the thin film transistor and disposed on the thin film transistor. The thin film transistor includes a gate electrode, a source electrode, and a drain electrode. At least one of the gate, source, and drain electrodes of the thin film transistor includes a semi-transmissive metal layer, a transparent metal layer, and a reflective metal layer to improve outdoor visibility of a display panel by reducing reflectance of the electrodes even though a polarizer is removed.

A free-form display is disclosed which makes a step-like pattern adjacent to a free-form portion less visible. The free-form display has an active area and a bezel area, and at least part of a boundary between the active area and the bezel area has a free-form portion. The free-form portion comprises subpixel electrodes and a light blocking portion. A plurality of subpixel electrodes are placed in areas defined by a plurality of gate lines and a plurality of data lines that intersect each other. A light blocking portion has openings exposing the subpixel electrodes, respectively, and is arranged to overlap the gate lines and the data lines. The active area comprises subpixel areas where the subpixel electrodes are placed, and a non-pixel area where no subpixel electrodes are placed. The openings of the light blocking portion adjacent to the non-pixel area, are made in different sizes.