A display device includes a display panel, a gate driving circuit, and an image determination unit. The gate driving circuit includes a double gate transistor. The image determination unit outputs an image determination signal to a second control electrode of the double gate transistor. When the display panel displays a still image, the double gate transistor is turned on by the image determination signal so that each of gate signals outputted from stages connected in cascade to a stage including the double gate transistor among stages included in the gate driving circuit has a gate-off voltage.

The present invention provides a TFT substrate structure, comprising a Switching TFT and a Driving TFT, and the Switching TFT comprises a first active layer, and the Driving TFT comprises a second active layer, and the first active layer and the second active layer are made by the same or different materials and the electrical properties of the Switching TFT and the Driving TFT are different. According to the different functions of the different TFTs, the present invention employs different working structures for the Switching TFT and the Driving TFT to respectively implement deposition and photolithography, and employs different materials for the active layers of the Switching TFT and the Driving TFT to differentiate the electrical properties of different TFTs in the TFT substrate. Accordingly, the accurate control to the OLED with lowest cost can be realized.

A thin film transistor (TFT) device is provided. The TFT device includes a first conductive layer including a gate electrode and a connection pad. The TFT device further includes a first dielectric layer covering the gate electrode, and a semiconductor layer disposed on the dielectric layer and overlapping the gate electrode. The TFT device further includes a second dielectric layer disposed on the semiconductor layer and the first dielectric layer so as to expose first and second portions of the semiconductor layer and the connection pad. The TFT device further includes a second conductive layer which includes a source electrode portion covering the first portion of the semiconductor layer; a pixel electrode portion extending to the source electrode portion; a drain electrode portion covering the second portion of the semiconductor layer; and an interconnection portion disposed on the connection pad and extending to the drain electrode portion.

With an image sensor in which the amplifier circuit is disposed at each pixel, there is such an issue that the threshold voltage of the transistor fluctuates so that the signal voltage fluctuates because a voltage is continuously applied between the source and the gate of the transistor at all times when using the amorphous thin film semiconductor as the transistor that constitutes an amplifier circuit. The gate-source potential of the TFT that constitutes the amplifier circuit is controlled so that the gate terminal voltage becomes smaller than the source terminal voltage in an integrating period where the pixels accumulate the signals, and controlled so that the gate terminal voltage becomes larger than the source terminal voltage in a readout period where the pixels output the signals.

The present invention relates to an array substrate, which comprises: a display region and a drive circuit region; the drive circuit region comprises GOA units, the GOA unit comprising a substrate, a gate electrode layer, an insulation layer, an active layer and a source/drain electrode layer, and the drive circuit region further comprises a gate wire connecting to the gate electrode layer, and a source/drain layer wire at the same layer with the source/drain electrode layer, wherein the area between the portions of the gate wire and the source/drain layer wire which intercross with each other is only formed with the insulation layer. The invention further relates to a manufacturing method of an array substrate and a display apparatus comprising the array substrate.

The present invention provides a BOA liquid crystal panel and a manufacturing method thereof. The BOA liquid crystal panel includes a first substrate, a second substrate opposite to the first substrate, a black matrix arranged in the first substrate, a thin-film transistor arranged on the black matrix, a color resist layer arranged on the second substrate, a common electrode layer arranged on the second substrate and the color resist layer, a photoresist spacer arranged on the common electrode layer and located between the first substrate and the second substrate, and a liquid crystal layer arranged between the first substrate and the second substrate. The present invention arranges the black matrix of the liquid crystal panel in a channel that is pre-formed in a substrate to make the film thickness of the liquid crystal panel uniform and improve the display performance of the liquid crystal panel.

A manufacturing method of an array substrate, an array substrate and a display device are provided. The array substrate includes a first thin film transistor and a pixel electrode (327), wherein, an active layer (324) and source and drain electrodes in the first thin film transistor as well as the pixel electrode (327) are formed by one patterning process. According to the invention, an array substrate with good performance can be manufactured only by three photolithography processes. Thus, the production cycle of a thin film transistor is shorted greatly, characteristics of the thin film transistor is improved, and meanwhile, yield of products is enhanced greatly.

The present invention belongs to the technical field of display, and specifically relates to an OLED pixel structure and an OLED display device. The OLED pixel structure comprises a thin film transistor and an OLED device, the thin film transistor being provided with a driving electrode for controlling whether the OLED device emits light or not, wherein the pixel structure comprises a transmission region and a reflection region in which a reflection layer formed by extending the driving electrode is provided. The beneficial advantages are that the OLED pixel structure can effectively improve the utilization of the light source and the utilization of the display panel.

The present invention provides a TFT, an array substrate and a display device. The TFT includes a gate electrode, a source electrode, a drain electrode, and a semiconductor layer. The source electrode and the drain electrode are arranged on different layers. The semiconductor layer is in electrical connection to the source electrode and the drain electrode, respectively; wherein, a region on the semiconductor layer which is corresponding to a region between the source electrode and the drain electrode is a channel region. The present invention also provides an array substrate and a display device comprising the on TFT.

A field effect transistor (FET) with an underlying airgap and methods of manufacture are disclosed. The method includes forming an amorphous layer at a predetermined depth of a substrate. The method further includes forming an airgap in the substrate under the amorphous layer. The method further includes forming a completely isolated transistor in an active region of the substrate, above the amorphous layer and the airgap.