A display device is provided including a first substrate comprising a resin material provided with a plurality region provided with a plurality of pixels including a display device, and a second substrate provided facing the first substrate and installed with the pixel region, wherein an outer periphery side surface of the first substrate having a taper shape and including a barrier layer covering an upper layer, lower layer and the outer periphery side surface of the first substrate.

The present application discloses a thin film transistor comprising a source electrode; a drain electrode; an active layer; a first connecting layer connecting the active layer to the source electrode; a second connecting layer connecting the active layer to the drain electrode; and an insulating layer between the first connecting layer and the second connecting layer.

An object is to provide a semiconductor device with stable electric characteristics in which an oxide semiconductor is used. An impurity such as hydrogen or moisture (e.g., a hydrogen atom or a compound containing a hydrogen atom such as H.sub.2O) is eliminated from an oxide semiconductor layer with use of a halogen element typified by fluorine or chlorine, so that the impurity concentration in the oxide semiconductor layer is reduced. A gate insulating layer and/or an insulating layer provided in contact with the oxide semiconductor layer can be formed to contain a halogen element. In addition, a halogen element may be attached to the oxide semiconductor layer through plasma treatment under an atmosphere of a gas containing a halogen element.

To provide a semiconductor device that includes an oxide semiconductor and is miniaturized while keeping good electrical properties. In the semiconductor device, an oxide semiconductor layer filling a groove is surrounded by insulating layers including an aluminum oxide film containing excess oxygen. Excess oxygen contained in the aluminum oxide film is supplied to the oxide semiconductor layer, in which a channel is formed, by heat treatment in a manufacturing process of the semiconductor device. Moreover, the aluminum oxide film forms a barrier against oxygen and hydrogen, which inhibits the removal of oxygen from the oxide semiconductor layer surrounded by the insulating layers including an aluminum oxide film and the entry of impurities such as hydrogen in the oxide semiconductor layer. Thus, a highly purified intrinsic oxide semiconductor layer can be obtained. The threshold voltage is controlled effectively by gate electrode layers formed over and under the oxide semiconductor layer.

By using a conductive layer including Cu as a long lead wiring, increase in wiring resistance is suppressed. Further, the conductive layer including Cu is provided in such a manner that it does not overlap with the oxide semiconductor layer in which a channel region of a TFT is formed, and is surrounded by insulating layers including silicon nitride, whereby diffusion of Cu can be prevented; thus, a highly reliable semiconductor device can be manufactured. Specifically, a display device which is one embodiment of a semiconductor device can have high display quality and operate stably even when the size or definition thereof is increased.

A thin film transistor and a manufacturing method thereof, an array substrate and a display device are provided. The method includes forming a gate electrode, a gate insulating layer, a metal oxide semiconductor (MOS) active layer, a source electrode and a drain electrode on a substrate. The MOS active layer includes forming a pattern layer of indium oxide series binary metal oxide including a first pattern directly contacting with the source electrode and the drain electrode. An insulating layer formed over the source electrode and the drain electrode acts as a protection layer, the pattern layer of indium oxide series binary metal oxide is implanted with metal doping ions by using an ion implanting process, and is annealed, so that the indium oxide series binary metal oxide of the third pattern is converted into the indium oxide series multiple metal oxide to form the MOS active layer.

The present invention generally relates to TFTs and methods for fabricating TFTs. For either back channel etch TFTs or for etch stop TFTs, multiple layers for the passivation layer or the etch stop layers permits a very dense capping layer to be formed over a less dense back channel protection layer. The capping layer can be sufficiently dense so that few pin holes are present and thus, hydrogen may not pass through to the semiconductor layer. As such, hydrogen containing precursors may be used for the capping layer deposition.

A thin film transistor includes: a gate electrode; a source electrode and a drain electrode; an oxide semiconductor layer used as a channel layer; and a gate insulating layer disposed between the gate electrode and the oxide semiconductor layer, wherein metallic elements included in the oxide semiconductor layer include at least indium (In), and fluorine (F) is included in a region which is an internal region in the oxide semiconductor layer and is close to the gate insulating layer.

An exemplary embodiment of the present invention provides a thin film transistor array panel and an organic light emitting diode display including the same including a substrate, a semiconductor disposed on the substrate, a first gate insulation layer disposed on the semiconductor, and a first diffusion barrier layer disposed on the first gate insulation layer. A second diffusion barrier layer is disposed on a lateral surface of the first diffusion barrier layer. A first gate electrode is disposed on the first diffusion barrier layer. A source electrode and a drain electrode are connected to the semiconductor. The first diffusion barrier layer comprises a metal, and the second diffusion barrier layer comprises a metal oxide including the metal.

A method of manufacturing a circuit substrate comprising a semiconductor element disposed on a transparent substrate, includes: forming an island-shaped oxide semiconductor layer on the transparent substrate; forming a patterned etch-stop layer made of an insulating material so as to cover at least a center portion of the island-shaped oxide semiconductor layer; depositing a conductive layer over an entire surface of the transparent substrate including a region over the patterned etch-stop layer; forming a patterned resist on the conductive layer; and etching the conductive layer using the patterned resist as a mask to form a patterned conductive layer from the conductive layer, wherein the patterned conductive layer includes a source electrode, a source wiring line, and a drain electrode, and continuing to etch the island-shaped oxide semiconductor thereunder using the patterned conductive layer and the patterned etch-stop layer as a mask to form a cutout in the island-shaped oxide semiconductor layer.