A TFT substrate and the manufacturing method thereof are disclosed. The method includes: providing a substrate; forming a gate electrode on the substrate; forming a first insulation layer and an active layer on the gate electrode in turn; forming a first black matrix on the active layer; forming a source electrode and a drain electrode on the first black matrix; forming a second insulation layer on the source electrode and the drain electrode; and forming a pixel electrode on the second insulation layer. The pixel electrode is electrically connected to the source electrode or the drain electrode via the second insulation layer. In this way, the masking effect of the display panel assembled by the TFT substrate can be ensured. In addition, the coupling capacitance between the data line and the scanning line may be reduced.

An electro-optical device is capable of high quality images. An electro-optical device (200) includes a first capacitive element (491), a second capacitive element (492), and a third capacitive element (493). The first capacitive element (491) includes a first conductive film (408), a first part of a second conductive film (411), and a first dielectric film (410). The second capacitive element (492) includes a third conductive film (416), a second part of a fourth conductive film (418), and a second dielectric film (417). The third capacitive element (493) includes the third conductive film (416), a third part of the fourth conductive film (418), and the second dielectric film (417). Since a capacitive element that includes a large capacitance value is formed in a narrow region, even if the pixel becomes smaller as the definition is increased, it is possible to realize an excellent electro-optical device in which display defects are suppressed.

An array substrate and a display panel are provided. The array substrate includes a transparent substrate including a display area and a rim area; a pixel structure and an antistatic switching tube which are arranged on a same side of the transparent substrate. The pixel structure includes a pixel thin-film transistor located in the display area, and the antistatic switching tube is located in the rim area. The pixel structure also includes first grounding wire located on a side of the antistatic switching tube facing away from the transparent substrate, and a second grounding wire located between the antistatic switching tube and the transparent substrate.

An organic light-emitting diode display is disclosed. In one aspect, the display includes a display unit located on the substrate and including a display area and a non-display area surrounding the display area, and a thin film encapsulation layer sealing the display unit. The display also includes a voltage line formed in the non-display area and surrounding the display area, a metal layer formed of the same material as the voltage line, and a dam surrounding the display area and contacting the voltage line. The voltage line includes a first voltage line disposed in one side of the display area. The first voltage line includes a pair of first end portions and a pair of first connectors respectively connected to the pair of first end portions and extending away from the display area. The metal layer is disposed between the pair of first connectors. The dam contacts the metal layer.

A thin film transistor is provided as follows. A first gate electrode and a second gate electrode are stacked on each other. A semiconductor layer is interposed between the first and second gate electrodes. A source electrode and a drain electrode are interposed between the semiconductor layer and the second gate electrode. A connection electrode connects electrically the first gate electrode and the second gate electrode. A first insulating film is interposed between the first gate electrode and the semiconductor layer. A second insulating film includes a first part interposed between the semiconductor layer and the second gate electrode and a second part interposed between the second gate electrode and the drain electrode. A third insulating film includes a first part interposed between the connection electrode and the second gate electrode.

A method of fabricating a thin film transistor including following steps is provided. Sequentially form a semiconductor layer, a metal layer and an auxiliary layer on a substrate. Perform a crystallization process to transform the semiconductor layer into an active layer after the metal layer and the auxiliary layer are disposed on the semiconductor layer. After the active layer is formed, pattern the metal layer to form a source and a drain. Form a gate insulator and a gate. The gate insulator is disposed between the gate and the source and drain.

A manufacturing method of a thin film transistor and a thin film transistor are provided. In the manufacturing method, formation of pattern of a source electrode (7), a drain electrode (8) and an active layer (6) comprises: forming a semiconductor layer (10) and a conductive layer (11) that cover the whole substrate on the substrate in sequence; forming a first photoresist layer (4) at a region where the source electrode is to be formed and at a region where the drain electrode is to be formed on the conductive layer (11), respectively; forming a second photoresist layer (5) at least at a gap between the source electrode and the drain electrode that are to be formed on the conductive layer (11); conducting an etching process on the substrate with the first photoresist layer (4), the second photoresist layer (5), the semiconductor layer (10) and the conductive layer (11) formed thereon, so as to form pattern of the active layer (6), the source electrode (7) and the drain electrode (8).

The present invention provides a TFT substrate structure and a manufacturing method thereof. The TFT substrate structure of the present invention includes an N-type lightly-doped amorphous silicon layer and an N-type heavily-doped amorphous silicon layer arranged between an amorphous silicon layer and a metal layer to form a gradient of doping concentration so as to reduce the potential barrier between the metal layer and the amorphous silicon layer, making injection of electrons easy and reducing the leakage current without lowering an operation current, thereby improving the electrical property of the TFT. The manufacturing method of a TFT substrate structure of the present invention includes forming an N-type lightly-doped amorphous silicon layer and an N-type heavily-doped amorphous silicon layer between an amorphous silicon layer and a metal layer to effectively reduce the potential barrier between the metal layer and the amorphous silicon layer, making injection of electrons easy and reducing the leakage current without lowering an operation current, thereby improving the electrical property of the TFT.

In an amorphous silicon thin film transistor-liquid crystal display device and a method of manufacturing the same, gate patterns including a gate line and a gate electrode are formed on an insulation substrate having a display region and a driving circuit region on which a plurality of shift resistors are formed. A gate insulating film, active layer patterns and data patterns including source/drain electrodes are formed successively on the substrate. A passivation layer on the substrate has a first contact hole exposing a drain electrode of the display region and second and third contact holes respectively exposing a gate electrode and source/drain electrode of a first transistor of each of the shift resistors. Electrode patterns on the passivation layer include a first electrode connected to the drain electrode of the display region through the first contact hole and a second electrode connecting the gate electrode to the source/drain electrode of the first transistor through the second and third contact holes. The gate driving circuit including the shift resistors and the wirings are integrated on the insulating substrate without an additional process, thereby simplifying the manufacturing process.

The present invention provides a display device and a manufacturing method thereof that can simplify manufacturing steps and enhance efficiency in the use of materials, and further, a manufacturing method that can enhance adhesiveness of a pattern. One feature of the invention is that at least one or more patterns needed for manufacturing a display panel, such as a conductive layer forming a wiring or an electrode or a mask for forming a desired pattern is/are formed by a method capable of selectively forming a pattern, thereby manufacturing a display panel.