Urea (multi)-(meth)acrylate (multi)-silane precursor compounds, synthesized by reaction of (meth)acrylated materials having isocyanate functionality with aminosilane compounds, either neat or in a solvent, and optionally with a catalyst, such as a tin compound, to accelerate the reaction. Also described are articles including a substrate, a base (co)polymer layer on a major surface of the substrate, an oxide layer on the base (co)polymer layer; and a protective (co)polymer layer on the oxide layer, the protective (co)polymer layer including the reaction product of at least one urea (multi)-(meth)acrylate (multi)-silane precursor compound synthesized by reaction of (meth)acrylated materials having isocyanate functionality with aminosilane compounds. The substrate may be a (co)polymer film or an electronic device such as an organic light emitting device, electrophoretic light emitting device, liquid crystal display, thin film transistor, or combination thereof. Methods of making the urea (multi)-(meth)acrylate (multi)-silanes and their use in composite films and electronic devices are described.

A photoelectronic device includes an active layer containing inorganic particles, and an oxide semiconductor layer containing zinc (Zn), silicon (Si), and oxygen (O), where the oxide semiconductor layer and the active layer are stacked layers. The photoelectronic device further includes a multilayer transparent electrode over or under the active layer, wherein the oxide semiconductor layer serves as a part of the multilayer transparent electrode.

A solid state image sensor includes a semiconductor substrate where photoelectric conversion regions for converting light into charges are arranged per pixel planarly arranged; an organic photoelectric conversion film laminated at a light irradiated side of the semiconductor substrate via an insulation film and formed at the regions where the pixels are formed; a lower electrode formed at and in contact with the organic photoelectric conversion film at a semiconductor substrate side; a first upper electrode laminated at a light irradiated side of the organic photoelectric conversion film and formed such that ends of the first upper electrode are substantially conform with ends of the organic photoelectric conversion film when the solid state image sensor is planarly viewed; and a film stress suppressor for suppressing an effect of a film stress on the organic photoelectric conversion film, the film stress being generated on the first upper electrode.

A solar cell system and a flexible solar panel are disclosed herein. The solar cell system includes a glass housing, a set of rows of solar cells each defining a front side and a rear side and arranged within the glass housing. The solar cell system can also include a reflective element disposed in the glass housing and facing the rear side of the set of rows of solar cells and a first terminal coupled to a first end of the set of rows of solar cells, traversing through and sealed against the first end of the glass housing. The solar cell system can be configured with other solar cell systems into the flexible solar panel that is deployable in a wide range of potential applications.

A pressure transducer and a fabrication method thereof are provided. The pressure transducer includes a light-emitting element, an interference light-filtering structure and a light-sensing element stacked on top of each other. The light-emitting element is configured to emit incident light onto the interference light-filtering structure. The interference light-filtering structure is configured to change its thickness in accordance with the pressure exerted on the pressure transducer and generate emergent light corresponding to the pressure. The light-sensing element is configured to detect the emergent light and generate an electrical signal corresponding to the emergent light.

To provide an inexpensive display device. The display device includes a pixel and an IC chip. The pixel includes a first pixel circuit including a display element and a second pixel circuit including a light-receiving device. The one IC chip includes a control circuit, a data driver circuit, and a read circuit. The first and second pixel circuits are electrically connected to the read circuit. The control circuit has a function of controlling driving of the data driver circuit and the read circuit. The data driver circuit has a function of supplying image data to the first pixel circuit. The read circuit has a function of outputting a monitor signal corresponding to a monitor current when the monitor current flows through the first pixel circuit. The read circuit also has a function of outputting an imaging signal corresponding to imaging data acquired by the second pixel circuit.

Provided are a display substrate and a manufacturing method thereof, and a visible light communication apparatus. The display substrate includes a substrate, and the substrate includes a display region and a peripheral region surrounding the display region; the peripheral region includes a visible light signal receiving region surrounding the display region; the display substrate further includes a photosensitive sensing unit, the photosensitive sensing unit is located in the visible light signal receiving region and is configured to receive a visible light signal and convert the visible light signal into an electrical signal to achieve visible light communication.

A tandem photovoltaic device includes a silicon photovoltaic cell having a silicon layer, a perovskite photovoltaic cell having a perovskite layer, and an intermediate layer between a rear side of the perovskite photovoltaic cell and a front (sunward) side of the silicon photovoltaic cell. The front side of the silicon layer has a textured surface, with a peak-to-valley height of structures in the textured surface of less than 1 μm or less than 2 μm. The textured surface is planarized by the intermediate layer or a layer of the perovskite photovoltaic cell. Forming the tandem photovoltaic device includes texturing a silicon containing layer of a silicon photovoltaic cell and operatively coupling a perovskite photovoltaic cell comprising a perovskite layer to the silicon photovoltaic cell, thereby forming a tandem photovoltaic device and planarizing the textured surface of the silicon containing layer of the silicon photovoltaic cell.

A light-emitting device includes: a first electrode; a second electrode facing the first electrode; and an interlayer between the first electrode and the second electrode and including a first layer, wherein the first electrode has a work function value of about −5.5 eV to about −6.1 eV, and the interlayer includes a second layer doped with a non-lead-based perovskite compound.

A solid junction-type photoelectric conversion element (10) including a first conductive layer (2), an electric power generation layer (4), and a second conductive layer (6), which are laminated in this order, wherein the electric power generation layer (4) comprises: a perovskite compound represented by a composition formula ABX.sub.3, formed of an organic cation A, a metal cation B and a halide anion X, and a compound Z having no perovskite structure.