Disclosed are a titanium dioxide nano ink having such a strong dispersibility as to be applicable by inkjet printing and having adequate viscosity without requiring printing several times, and a titanium dioxide nano particle modified by a surface stabilizer included therein. Inkjet printing of the titanium dioxide nano ink enables printing of a minute electrode. In addition, efficiency of a solar cell may be maximized since occurrence of pattern cracking is minimized.

The purpose of this invention is to provide a repeatedly chargeable and dischargeable quantum battery that is available for a long period of time without an aging change. The quantum battery is charged by causing an n-type metal oxide semiconductor to have a photo-exited structural change, thereby the electrode of quantum battery is prevented from being oxide and a price reduction and stable operation are possible. The repeatedly usable quantum battery is constituted by laminating; a first metal electrode having an oxidation preventing function, charging layer in which an energy level is formed in the band gap by causing an n-type metal oxide semiconductor covered with an insulating material to have a photo-exited structure change and electrons are trapped at the energy level; p-type metal oxide semiconductor layer; and a second metal electrode having the oxidation preventing function, the electrodes are passive metal layers formed of metals having passive characteristics.

A homogeneous coating solution for forming a light-absorbing layer of a solar cell, the homogeneous solution including: at least one metal or metal compound selected from the group consisting of a group 11 metal, a group 13 metal, a group 11 metal compound and a group 13 metal compound; a Lewis base solvent; and a Lewis acid.

A method for thermal exfoliation includes providing a target layer on a substrate to form a structure. A stressor layer is deposited on the target layer. The structure is placed in a temperature controlled environment to induce differential thermal expansion between the target layer and the substrate. The target layer is exfoliated from the substrate when a critical temperature is achieved such that the target layer is separated from the substrate to produce a standalone, thin film device.

One embodiment of the present invention can provide a system for fabrication of a photovoltaic structure. The system can include a physical vapor deposition tool configured to sequentially deposit a transparent conductive oxide layer and a metallic layer on an emitter layer formed in a first surface of a Si substrate, without requiring the Si substrate to be removed from the physical vapor deposition tool after depositing the transparent conductive oxide layer. The system can further include an electroplating tool configured to plate a metallic grid on the metallic layer and a thermal annealing tool configured to anneal the transparent conductive oxide layer.

A solar cell module includes: two solar cells, each including: a first main face and a second main face; a first electrode on the first main face, comprising a bus-bar electrode having at least one of an opening portion, notch portion, and gap portion; and a second electrode on the first or second main face having a polarity opposite to that of the first electrode; a wiring member that electrically connects the first electrode of one solar cell to the second electrode of another solar cell; and an electrically conductive connection layer that contacts the wiring member and the first main face.

Manufacture for an improved stacked-layered thin film solar cell. Solar cell has reduced absorber thickness and an improved back contact for Copper Indium Gallium Selenide solar cells. The back contact provides improved reflectance particularly for infrared wavelengths while still maintaining ohmic contact to the semiconductor absorber. This reflectance is achieved by producing a back contact having a highly reflecting metal separated from an absorbing layer with a dielectric layer.

A solar cell includes polysilicon P-type and N-type doped regions on a backside of a substrate, such as a silicon wafer. A trench structure separates the P-type doped region from the N-type doped region. Each of the P-type and N-type doped regions may be formed over a thin dielectric layer. The trench structure may include a textured surface for increased solar radiation collection. Among other advantages, the resulting structure increases efficiency by providing isolation between adjacent P-type and N-type doped regions, thereby preventing recombination in a space charge region where the doped regions would have touched.

In various embodiments, photovoltaic devices incorporate discontinuous passivation layers (i) disposed between a thin-film absorber layer and a partner layer, (ii) disposed between the partner layer and a front contact layer, and/or (iii) disposed between a back contact layer and the thin-film absorber layer.

The present invention relates to a method for preparing an aqueous or hydro-alcoholic colloidal solution of metal chalcogenide amorphous nanoparticles notably of the Cu.sub.2ZnSnS.sub.4 (CZTS) type and to the obtained colloidal solution.

The present invention also relates to a method for manufacturing a film of large-grain crystallized semi-conducting metal chalcogenide film notably of CZTS obtained from an aqueous or hydro-alcoholic colloidal solution according to the invention, said film being useful as an absorption layer deposited on a substrate applied in a solid photovoltaic device.