H10F77/211

ULTRA-THIN DOPED NOBLE METAL FILMS FOR OPTOELECTRONICS AND PHOTONICS APPLICATIONS

Electrically conductive, thin, smooth films are provided that comprise silver (Ag) and a conductive metal, such as aluminum (Al), titanium (Ti), nickel (Ni), chromium (Cr), gold (Au), magnesium (Mg), tantalum (Ta), germanium (Ge) or combinations thereof. In other alternative variations, electrically conductive, thin, smooth films are provided that comprise gold (Au) or copper (Cu) and a conductive metal, such as aluminum (Al), titanium (Ti), nickel (Ni), chromium (Cr), gold (Au), magnesium (Mg), tantalum (Ta), germanium (Ge) or combinations thereof. Such materials have excellent electrical conductivity, may be ultra-thin, flexible, transparent, and have low optical loss. Assemblies incorporating such films and methods of making the films are also provided. The assemblies may be used in photovoltaic and light emitting devices with high power conversion efficiencies or optical meta-materials that exhibit high transmittance and homogeneous response, among others.

POLY-SILOXANE CONTAINING ORGANIC VEHICLE FOR ELECTROCONDUCTIVE PASTES
20170200837 · 2017-07-13 ·

The invention relates to a passivated emitter rear solar cell, comprising a silicon substrate having a front and back surface, a rear passivation layer on the back surface of the silicon substrate having a plurality of open holes formed therein, an aluminum back contact layer formed in the open holes of the rear passivation layer, and at least one backside soldering tab on the back surface of the silicon substrate. The backside soldering tab is formed from an electroconductive paste composition comprising conductive metallic particles, at least one lead-free glass frit, and an organic vehicle comprising at least one silicone oil.

Method of forming electrode, electrode manufactured therefrom and solar cell

A method of forming an electrode, an electrode for a solar cell manufactured, and a solar cell, the method including forming a pattern of a finger electrode by: coating a composition for forming a first electrode that includes a conductive powder, an organic vehicle, and a first glass frit that is free of silver and phosphorus, and drying the coated composition for forming a first electrode; forming a pattern of a bus electrode by: coating a composition for forming a second electrode that includes a conductive powder, an organic vehicle, and a second glass fit that includes silver and phosphorus, and drying the coated composition for forming a second electrode; and firing the resultant patterns.

Conductive structure body and method for manufacturing the same

The present specification relates to a conductive structure body and a method for manufacturing the same.

Crack-tolerant photovoltaic cell structure and fabrication method

After forming an absorber layer containing cracks over a back contact layer, a passivation layer is formed over a top surface of the absorber layer and interior surfaces of the cracks. The passivation layer is deposited in a manner such that that the cracks in the absorber layer are fully passivated by the passivation layer. An emitter layer is then formed over the passivation layer to pinch off upper portions of the cracks, leaving voids in lower portions of the cracks.

CONDUCTIVE COMPOSITION

The present invention relates to a conductive composition, and more particularly, to a conductive copper ink or paste composition for forming fine pattern which comprises a metal precursor and copper powder to increase the density of metal pattern formed during sintering and improve surface roughness, thereby being capable of achieving excellent electrical conductivity, adhesion strength to a substrate, and printability.

Formation of Ohmic Back Contact for Ag2ZnSn(S,Se)4 Photovoltaic Devices

Techniques for forming an ohmic back contact for Ag.sub.2ZnSn(S,Se).sub.4 photovoltaic devices. In one aspect, a method for forming a photovoltaic device includes the steps of: depositing a refractory electrode material onto a substrate; depositing a contact material onto the refractory electrode material, wherein the contact material includes a transition metal oxide; forming an absorber layer on the contact material, wherein the absorber layer includes Ag, Zn, Sn, and at least one of S and Se; annealing the absorber layer; forming a buffer layer on the absorber layer; and forming a top electrode on the buffer layer. The refractory electrode material may be Mo, W, Pt, Ti, TiN, FTO, and combinations thereof. The transition metal oxide may be TiO.sub.2, ZnO, SnO, ZnSnO, Ga.sub.2O.sub.3, and combinations thereof. A photovoltaic device is also provided.

SYSTEM AND METHOD FOR TIN PLATING METAL ELECTRODES
20170194517 · 2017-07-06 · ·

Systems and methods for fabricating a photovoltaic structure are provided. During fabrication, a patterned mask is formed on a first surface of a multilayer body of the photovoltaic structure, with openings of the mask corresponding to grid line locations of a first grid. Subsequently, a core layer of the first grid is deposited in the openings of the patterned mask, and a protective layer is deposited on an exposed surface of the core layer. The patterned mask is then removed to expose the sidewalls of the core layer. Heat is applied to the protective layer such that the protective layer reflows to cover both the exposed surface and sidewalls of the core layer.

ADVANCED DESIGN OF METALLIC GRID IN PHOTOVOLTAIC STRUCTURES
20170194516 · 2017-07-06 · ·

One embodiment of the present invention provides a photovoltaic cell. The photovoltaic cell includes a multi-layer semiconductor structure with at least one tapered corner and an electrode that includes a metallic grid having a plurality of finger lines and a single busbar with multiple segments coupled to the finger lines. The single busbar is configured to collect current from the finger lines. The busbar may have a center portion and side portion(s). The side portion(s) may be connected to the center portion forming a non-180-degree angle with the center portion. The finger lines may also be connected to the side portion(s).

HIGH POWER SOLAR CELL MODULE

A high power solar cell module including a cover plate, a back plate, a first encapsulation, a second encapsulation, a plurality of N type hetero-junction solar cells, and a plurality of reflective connection ribbons is provided. The back plate is opposite to the cover plate. The first encapsulation is located between the cover plate and the back plate. The second encapsulation is located between the first encapsulation and the back plate. The N type hetero-junction solar cells and the reflective connection ribbons are located between the first encapsulation and the second encapsulation, and any two adjacent N type hetero junction solar cells are connected in series along a first direction by at least one of the reflective connection ribbons, wherein each of the reflective connection ribbons has a plurality of triangle columnar structures. Each of the triangle columnar structures points to the cover plate and extends along the first direction.