A solid-state imaging device includes a pixel array section that has at least one pixel with a photoelectric conversion unit and a charge detection unit. A driving section is configured to read out a signal of the pixel, a first portion of said signal being based on signal charge, a second portion of said signal being based on a reset potential. A signal processing section is configured to read out the first portion of the signal as a reference voltage, with the reference voltage being adjusted to cause the first and second portions of the signal to be within an input voltage range.

A solid-state imaging device includes: a pixel unit in which pixels are arranged in a matrix pattern; and a pixel signal read-out unit including an AD conversion unit performing analog-to-digital (AD) conversion of a pixel signal read out from the pixel unit, wherein each pixel included in the pixel unit includes division pixels divided into regions in which photosensitivity levels or electric charge accumulating amounts are different from one another, the pixel signal reading unit includes a normal read-out mode and a multiple read-out mode, and includes a function of changing a configuration of a frame in accordance with a change of the read-out mode, and wherein the AD conversion unit acquires a pixel signal of one pixel by adding the division pixel signals while performing AD conversion for the division pixel signals.

An auto focus camera module includes a camera module housing defining an aperture and an internal cavity to accommodate camera module components, an image sensor coupled to or within the housing, a lens barrel within the housing that contains an optical train including at least one movable lens disposed relative to the aperture and image sensor to focus images of scenes onto the image sensor along an optical path, and a fast focus MEMS actuator coupled to one or more lenses of the optical train including the at least one movable lens and configured to rapidly move said at least one movable lens relative to the image sensor to provide autofocus for the camera module in each frame of a preview or video sequence or both.

A solid-state image sensor has a pixel array and a processor configured to process a signal from the pixel array, the pixel array including a light-receiving pixel having first and second photoelectric converters and a light-shielded pixel having third and fourth photoelectric converters. The processor outputs (a) a pixel signal corresponding to charges of the first photoelectric converter, (b) an added pixel signal corresponding to a sum of charges of the first photoelectric converter and charges of the second photoelectric converter, and (c) an added reference signal corresponding to a sum of charges of the third photoelectric converter and charges of the fourth photoelectric converter, and does not output (d) a reference signal corresponding to charges of the third photoelectric converter and a reference signal corresponding to charges of the fourth photoelectric converter.

A photoelectric conversion element that generates charges according to a light quantity of incident light and accumulates the charges in the inside thereof, a transfer transistor (TRG) that transfers the charges accumulated by the photoelectric conversion element, a first charge voltage conversion section that converts the charges transferred by the transfer transistor (TRG) into a voltage, and a substrate electrode of a MOS capacitor (a region of a second charge voltage conversion section facing a gate electrode) that connects the first charge voltage conversion section via a connection transistor (FDG). The gate electrode of the MOS capacitor is applied with a voltage that is different in a read period of the voltage signal converted by the first charge voltage conversion section and in a period other than the read period. The present disclosure can also be applied to a CMOS image sensor or the like.

A solid-state image sensor comprising pixels, each including a first region of a first conductivity type, a second region of the first conductivity type formed in a position shifted from the first region in a first direction, a third region of a second conductivity type formed between the first and second regions, a fourth region of the first conductivity type formed in a position shifted from the third region in a second direction, a first gate electrode of a transistor arranged between the first and fourth regions, a second gate electrode of a transistor arranged between the second and fourth regions, and a fifth region of the second conductivity type formed between the first and second gate electrodes and between the third and fourth regions, and a concentration of the fifth region is higher than that of the third region.

A solid-state imaging apparatus is provided. The apparatus comprises a pixel region where a photoelectric conversion element is arranged, a first insulating film having a first opening portion which is over the photoelectric conversion element, a first insulator comprising a first portion arranged in the first opening portion, and a second portion covering an upper surface of the first portion and an upper surface of the first insulating film, a second insulating film having a second opening portion which is over the first opening portion, and a third portion arranged in the second opening portion. A hydrogen concentration of the second portion is higher than a hydrogen concentration of the first insulating film. An upper surface area of the first portion is larger than a lower surface area of the third portion which is over the first portion.

An image sensor includes a plurality of photodiodes, a plurality of color filters, and a plurality of microlenses. The plurality of photodiodes are arranged as a photodiode array, each of the plurality of photodiodes disposed within respective portions of a semiconductor material with a first lateral area. The plurality of color filters are arranged as a color filter array optically aligned with the photodiode array. Each of the plurality of color filters having a second lateral area greater than the first lateral area. The plurality of microlenses are arranged as a microlens array optically aligned with the color filter array and the photodiode array. Each of the plurality of microlenses have a third later area greater than the first lateral area and less than the second lateral area.

A medical imaging system for illuminating tissue samples using three-dimensional structured illumination microscopy is port-based surgery is provided. The system comprises: an image sensor; a mirror device; zoom optics; a light modulator; a processor; and collimating optics configured to convey one or more images from the modulator to the mirror, the mirror configured to convey the images to the zoom optics, the zoom optics configured: to convey the image(s) from the mirror to a tissue sample; and convey one or more resulting images, formed by the image(s) illuminating the sample, back to the mirror, which conveys the resulting image(s) from the zoom optics to the image sensor, and, the processor configured to control the modulator to form the image(s), the image(s) including at least one pattern selected to interact with the sample to generate different depth information in each of resulting image(s).

An imaging device includes: an image pickup element; a focal plane shutter including: a board including an opening exposing the image pickup element; a leading shutter and a trailing shutter movable between a closed position to close the opening and an opened position to open the opening; and a leading shutter actuator and a trailing shutter actuator respectively driving the leading shutter and the trailing shutter, a drive control portion that drives the leading shutter actuator and the trailing shutter actuator; and a control portion that controls the image pickup element.