A solid state imaging device includes a pixel array unit in which color filters of a plurality of colors are arrayed with four pixels of vertical 2 pixels×horizontal 2 pixels as a same color unit that receives light of the same color, shared pixel transistors that are commonly used by a plurality of pixels are intensively arranged in one predetermined pixel in a unit of sharing, and a color of the color filter of a pixel where the shared pixel transistors are intensively arranged is a predetermined color among the plurality of colors. The present technology can be applied, for example, to a solid state imaging device such as a back-surface irradiation type CMOS image sensor.

An image sensor includes a semiconductor layer, a plurality of light sensing regions, a first pixel isolation layer, a light shielding layer, and a wiring layer. The semiconductor layer has a first surface and a second surface opposite to the first surface. The plurality of light sensing regions is formed in the semiconductor layer. The first pixel isolation layer is disposed between adjacent light sensing regions from among the plurality of light sensing regions. The first pixel isolation layer is buried in an isolation trench formed between the first surface and the second surface. The light shielding layer is formed on the second surface of the semiconductor layer and on some of the adjacent light sensing regions. The wiring layer is formed on the first surface of the semiconductor layer.

Disclosed is an electronic device configured to generate depth information. The electronic device includes: a memory storing one or more instructions and image data; and at least one processing circuit configured to generate the depth information on the image data by executing the one or more instructions, wherein the at least one processing circuit is further configured to obtain luminance data of the image data, generate absolute depth data for the luminance data by using a first artificial neural network configured to extract disparity features, and generate the depth information based on the absolute depth data.

An object classification system for classifying objects is described. The system comprises an imaging region adapted for irradiating an object of interest, an arrayed detector, and a mixing unit configured for mixing the irradiation stemming from the object of interest by reflecting or scattering on average at least three times the irradiation after its interaction with the object of interest and prior to said detection.

An electronic component unit includes: an electronic module in which a rear substrate is electrically connected via an electric cable to an electronic element; an external connection terminal that is electrically connected to an external circuit; a relay substrate including a terminal connection electrode to which the external connection terminal is electrically connected either directly or via a connection conductor; and a relay connector on the relay substrate. The electronic element is any one of: an imaging element; a laser element; and a sensor element.

A Light Detection And Ranging (LIDAR) apparatus includes a pulsed light source to emit optical signals, a detector array comprising single-photon detectors to output respective detection signals indicating times of arrival of a plurality of photons incident thereon, and processing circuitry to receive the respective detection signals. The processing circuitry includes one or more of a recharge circuit configured to activate and deactivate subsets of the single photon detectors for respective strobe windows between pulses of the optical signals and at differing delays, a correlator circuit configured to output respective correlation signals representing detection of one or more of the photons having times of arrival within a predetermined correlation time relative to one another, and a time processing circuit comprising a counter circuit configured to increment a count value and a time integrator circuit configured to generate an integrated time value based on the respective correlation signals or detection signals.

The disclosure relates to active pixel sensors such as CMOS sensors. A sample stage of each pixel may comprise first and second sample switches in series between a buffer amplifier and a storage node. The first sample switch is connected to a column sample line, and the second sample switch is connected to a row sample line, such that an exposure signal is only passed to the storage node at a time when both a column sample signal and a row sample signal are active.

An imaging device including pixels each including: a photoelectric converter including a first electrode, a second electrode, and a photoelectric conversion layer between the first electrode and the second electrode, the second electrode of each of the pixels being electrically connected to each other; and a transistor having a gate electrically connected to the first electrode. The imaging device further including voltage supply circuitry electrically connected to the second electrode, in which the voltage supply circuitry supplies a first voltage to the second electrode in an exposure period, the voltage supply circuitry supplies a second voltage to the second electrode in a non-exposure period, an a potential difference between the first electrode and the second electrode in the non-exposure period is less than a potential difference between the first electrode and the second electrode in the exposure period.

Images can be processed using an image processing apparatus including: an image data obtaining section that obtains at least two pieces of parallax image data from an image capturing element that includes color filters and opening masks so that one color filter and one opening mask correspond to one of at least a part of photoelectric conversion elements and outputs the at least two pieces of parallax image data; and a correcting section that corrects color imbalance of a corresponding pixel caused between the at least two pieces of parallax image data, based on at least one of a position of the at least a part of photoelectric conversion elements in the image capturing element and an opening displacement of the opening mask.

An imaging element includes a photoelectric conversion section and a wiring layer. The photoelectric conversion section is configured to photoelectrically convert light incident from a subject. The wiring layer is provided on an opposite side of the subject with respect to the photoelectric conversion section and includes a wire connected to an element that constitutes a pixel including the photoelectric conversion section. The wire includes a plurality of wires extending long in a predetermined direction. The plurality of wires are arranged in a direction almost perpendicular to the predetermined direction in the wiring layer. The wire is provided with a protrusion protruding in a direction different from the predetermined direction.