A method performed with an image sensor having a pixel array. At least one frame of a scene may be obtained using the pixel array. At least one region of interest (ROI) is identified within the frame. Subsequent frames of the scene are obtained, which involves controlling the pixel array to perform high resolution imaging with respect to the at least one ROI and low resolution imaging using analog binning with respect to remaining regions of the frames.

To provide an imaging element comprising: two first pixels that are arranged serially in a first direction and detect light of a first color; two second pixels that are arranged serially in a second direction intersecting the first direction, are adjacent to the two first pixels, and detect light of a second color; a plurality of first light-receiving regions that are arranged in the first pixels, receive light of the first color, and are divided in the first direction; and a plurality of second light-receiving regions that are arranged in the second pixels, receive light of the second color, and are divided in the second direction.

An imaging device with low power consumption is provided. The pixel of the imaging device includes first and second photoelectric conversion elements, and first to fifth transistors. A cathode of the first photoelectric conversion element is electrically connected to the first transistor. An anode of a second photoelectric conversion element is electrically connected to the second transistor. Imaging data of a reference frame is obtained using the first photoelectric conversion element, and then imaging data of a difference detection frame is obtained using the second photoelectric conversion element. After the imaging data of the difference detection frame is obtained, a first potential that is a potential of a signal output from the pixel and a second potential that is a reference potential are compared. Whether or not there is a difference between the imaging data of the reference frame and the imaging data of the difference detection frame is determined using the first potential and the second potential.

An array of pixels for charge domain binning in a CMOS image sensor, to increase the readout sensitivity of such a sensor. The array of pixels comprises at least two pixels in a common substrate. At least one of said pixels is configured or configurable to function as a pixel of a first type with a first, higher, charge collecting capability, for collecting charges generated by radiation impinging on the substrate. At least another one of said pixels is configurable to function as pixel of a second type, with a second, reduced, charge collecting capability, and as a pixel of the first type.

A smart binning circuit includes an edge information generator suitable for generating edge information from pixel data outputted from a pixel array; a weight allocator suitable for allocating a weight based on the edge information; a binning component suitable for generating a binning value by performing an edge detection interpolation (EDI) binning on the edge information; a bayer binning component suitable for generating an average value representing pixels that are down-scaled through a 4-sum binning operation; and a combiner suitable for combining the binning value and the average value according to the allocated weight.

An imaging system has an imager comprising a plurality of jots. A readout circuit is in electrical communication with the imager. The readout circuit can be configured to facilitate the formation of an image by defining neighborhoods of the jots, wherein a local density of exposed jots within a neighborhood is used to generate a digital value for a pixel of the image.

The present disclosure relates to a solid-state imaging device, a signal processing method therefor, and an electronic apparatus enabling sensitivity correction in which a sensitivity difference between solid-state imaging devices is suppressed. The solid-state imaging device includes a pixel unit in which one microlens is formed for a plurality of pixels in a manner such that a boundary of the microlens coincides with boundaries of the pixels. The correction circuit corrects a sensitivity difference between the pixels inside the pixel unit based on a correction coefficient. The present disclosure is applicable to, for example, a solid-state imaging device and the like.

An image sensor, includes: a plurality of pixels arranged along a first direction, each of which includes a photoelectric conversion unit that generates an electric charge through photoelectric conversion of light, and outputs a signal generated based upon the electric charge generated in the photoelectric conversion unit; a first signal line to which signals from one or more pixels among the plurality of pixels are output; a second signal line to which a signal from another pixel among the plurality of pixels is output; and an arithmetic unit that executes an arithmetic operation with a signal generated by combining the signals from the one or more pixels output to the first signal line and the signal output to the second signal line.

An image sensor includes: a first pixel having a first photoelectric conversion unit that photoelectrically converts light to generate a charge, a first accumulation unit that accumulates the charge generated by the first photoelectric conversion unit, and a first output unit that is connected to the first accumulation unit; a second pixel having a second photoelectric conversion unit that photoelectrically converts light to generate a charge, a second accumulation unit that accumulates the charge generated by the second photoelectric conversion unit, and a second output unit that is connected to and disconnected from the second accumulation unit via a second connection unit; and an adjustment unit that adjusts capacitances of the first accumulation unit and the second accumulation unit if a signal based on the charges generated by the first photoelectric conversion unit and the second photoelectric conversion unit is output from the first output unit.

An electronic device is disclosed. The electronic device includes at least one processor electrically connected with an image sensor and a memory. The memory stores instructions, when executed, causing the processor to obtain an image through the image sensor, segment the obtained image into the plurality of regions, calculate values of a first parameter for each of the plurality of regions based on the reference color components indicating a representative color of each of the plurality of regions, calculate values of a second parameter for each of the plurality of regions based on first pixel values output from the plurality of first light receiving elements included in each of the plurality of regions and second pixel values output from the plurality of second light receiving elements, determine a type of a light source corresponding to each of the plurality of regions, based on a value of the second reference parameter included in data about the correlationship corresponding to the calculated values of the first parameter and values of the second parameter calculated for each of the plurality of regions, and determine a type of a light source of the image based on the determined types of the light source. In addition, various other embodiments recognized from the specification are also possible.