An image sensor may include an array of image pixels. The array of image pixel may be coupled to column readout circuitry. A given image pixel may generate a low light signal and a high light signal for a given exposure. A column line may couple the given image pixel to readout circuitry having amplifier circuitry. The column line may be coupled to an autozeroing transistor for reading out the high light signal and a source follower stage for readout out the low light signal. The amplifier circuitry may receive different common mode voltage depending on whether it is amplifying the low or high light signal. The gain and other operating parameters of the amplifier circuitry may be adjusted based on whether it is amplifying the low or high signal. If desired, separate amplifier circuitry may be implemented for the low and high light signals.

To make it possible to reduce power consumption in a charge pump that supplies driving power to a pixel array. An imaging element (4) according to an embodiment includes: an imaging unit (100) in which pixels (10) including a light receiving element are arrayed, a drive unit (112) that generates a drive signal for driving the pixels, a charge pump circuit (122) that generates electric power for driving the drive unit, and a control unit (120) that controls, according to operation of the imaging unit, a driving capability of the charge pump circuit to drive the drive unit.

It is an object to provide a solid-state imaging apparatus and a distance measurement system that can detect high-frequency pulsed light. The solid-state imaging apparatus includes a plurality of pixels, a drive section, and a time measurement section. Each of the plurality of pixels has a light-receiving element that converts received light into an electric signal. The drive section drives the plurality of pixels by shifting operation timings of the light-receiving elements. The time measurement section is provided such that the electric signal is input from each of the plurality of pixels and measures the time until light emitted from a light source is reflected by a subject and received by the light-receiving element on the basis of the input of the electric signal.

Disclosed is a CMOS image sensor with global shutters and a method for fabricating the CMOS image sensor. In one embodiment, a semiconductor device, includes: a light-sensing region; a charge-storage region; a light-shielding structure; and at least one via contact; wherein the charge-storage region is spatially configured adjacent to the light-sensing region in a lateral direction, wherein the light-shielding structure is configured over the charge-storage region in a vertical direction so as to prevent incident light leaking from the light-sensing region to the signal-processing region, wherein the light-shielding structure is configured in an interlayer dielectric (ILD) layer, and wherein the light-shielding structure is simultaneously formed with the at least one via contact.

A first avalanche diode including a first semiconductor region and a second avalanche diode including a second semiconductor region are provided, a first isolation portion is arranged between the first semiconductor region and the second semiconductor region, the first isolation portion is constituted by a third semiconductor region, or a fourth semiconductor regions and the third semiconductor regions arranged to sandwich the fourth semiconductor region in plan view, and in the fourth semiconductor regions, an impurity concentration Nd of the third semiconductor region, an impurity concentration Na of the fourth semiconductor region, an elementary electric charge q, a dielectric constant ε of a semiconductor, a potential difference V between a P-N junction of the third semiconductor region and the fourth semiconductor region, and a length D of the third semiconductor region sandwiched by the fourth semiconductor regions satisfy Expression 1.

[00001]$2\times \sqrt{\frac{2\epsilon \mathrm{Nd}V}{q\mathrm{Na}\left(\mathrm{Na}+\mathrm{Nd}\right)}}>D$

An amplifier transistor within an image-sensor pixel is implemented upside down relative to conventional orientation such that a substrate-resident floating diffusion node of the pixel forms the gate of the amplifier transistor—achieving increased pixel conversion gain by eliminating the conventional metal-layer interconnection between the floating diffusion node and amplifier-transistor gate and concomitant parasitic capacitance.

In a pixel 200, a floating diffusion FD11 and a first capacitor CS11 are selectively connected to each other via a first connection element LG11-Tr, to change the capacitance of the floating diffusion FD11 between a first capacitance and a second capacitance, thereby changing the conversion gain between a first conversion gain (HCG) corresponding to the first capacitance and a second conversion gain (MCG) corresponding to the second capacitance. The floating diffusion FD11 and a second capacitor CS12 are connected together through a second connection element SG11-Tr to change the capacitance of the floating diffusion FD11 to a third capacitance, thereby changing the conversion gain of the source following transistor SF11-Tr to a third conversion gain (LCG) corresponding to the third capacitance

An imaging device includes an image sensing device, a private key generation unit, and an image encryption unit. The image sensing device includes an image generator configured to generate image data acquired by capturing as image, and a physical unclonable function (PUF) generator configured to generate physical unclonable function (PUF) data including information about at least one fixed pattern noise (FPN) data value and at least one random telegraph noise (RTN) data value. The private key (KEY) generation unit generates a private key based on the at least one FPN data value and the at least one RTN data value that are acquired from the PUF data. The image encryption unit encrypts the image data using the private key. A first transistor included in the PUF generator exhibits different properties from a second transistor that is included in the image generator and corresponds to the first transistor.

An imaging device includes a plurality of pixel sensors that respond to incident light. At least one drive-sense circuit is configured to generating a sensed signal corresponding to one of the plurality of pixel sensors. The at least one drive-sense circuit includes: a first conversion circuit configured to convert, a receive signal component of a sensor signal corresponding to the one of the plurality of pixel sensors into the sensed signal, wherein the sensed signal indicates a change in a capacitance associated with the one of the plurality of pixel sensors; a second conversion circuit configured to generate, based on the sensed signal, a drive signal component of the sensor signal corresponding to the one of the plurality of pixel sensors. The at least one drive-sense circuit is further configured to generate a plurality of other sensed signals corresponding to other ones of the plurality of pixel sensors for the other ones of the plurality of pixel sensors. A graphics processing module is configured to generate image data based on the sensed signal and the plurality of other sensed signals.

An imaging device includes a plurality of pixel sensors that respond to incident light. At least one drive-sense circuit is configured to generating a sensed signal corresponding to one of the plurality of pixel sensors. The at least one drive-sense circuit includes: a first conversion circuit configured to convert, a receive signal component of a sensor signal corresponding to the one of the plurality of pixel sensors into the sensed signal, wherein the sensed signal indicates a change in a capacitance associated with the one of the plurality of pixel sensors; a second conversion circuit configured to generate, based on the sensed signal, a drive signal component of the sensor signal corresponding to the one of the plurality of pixel sensors. The at least one drive-sense circuit is further configured to generate a plurality of other sensed signals corresponding to other ones of the plurality of pixel sensors for the other ones of the plurality of pixel sensors. A graphics processing module is configured to generate image data based on the sensed signal and the plurality of other sensed signals.