A solar cell and a photovoltaic module. The solar cell includes substrate, tunnel oxide layer, doped conductive layer, intrinsic polycrystalline silicon layer, enhanced conductive portion, and first electrodes. The tunnel oxide layer covers the first surface of the substrate. The doped conductive layer covers one side of the tunnel oxide layer away from the substrate. The intrinsic polycrystalline silicon layer is formed on one side of the doped conductive layer away from the tunnel oxide layer. The enhanced conductive portion covers one side of the intrinsic polycrystalline silicon layer away from the doped conductive layer, and is at least partially connected to the doped conductive layer. First electrodes are formed on one side of the enhanced conductive portion away from the intrinsic polycrystalline silicon layer, and at least part of each first electrode is located in the enhanced conductive portion to be electrically connected to the doped conductive layer.

A solar cell, a method for manufacturing the same, and a photovoltaic module are provided. The solar cell includes a substrate, first and second doped parts, and first electrodes. The substrate has a first surface including first regions and second regions arranged alternatingly in a first direction. Each of the first and second doped parts is located on a corresponding first and second region, respectively and is separated from each other. Each first electrode and a third doped part are located on the corresponding first doped part. On the first doped part, the third doped part is located on at least one side of the first electrode in the first direction and is separated from the adjacent first electrode. The first doped parts are doped with dope elements different from the second doped parts and the third doped parts.

This application provides an A/M/X crystalline material, a photovoltaic device, and preparation methods thereof. The photovoltaic device includes a photoactive crystalline material layer (103). The photoactive crystalline material layer (103) includes a penetrating crystal grain (313), where the penetrating crystal grain (313) is a crystal grain penetrating through the photoactive crystalline material layer (103), and a percentage p of a quantity of penetrating crystal grains (313) in a total quantity of crystal grains of the photoactive crystalline material layer (103) is 80%. The photoactive crystalline material layer (103) includes a backlight side (113) and a backlight crystal grain (31, 32, 33), where the backlight crystal grain (31, 32, 33) is a crystal grain exposed to the backlight side (113) and has a backlight crystal face exposed to the backlight side (113). At least one region of the backlight side (113) has an average flatness index R.sub.avg being 75.

This application provides an A/M/X crystalline material, a photovoltaic device, and preparation methods thereof. The photovoltaic device includes a photoactive crystalline material layer (103). The photoactive crystalline material layer (103) includes a penetrating crystal grain (313), where the penetrating crystal grain (313) is a crystal grain penetrating through the photoactive crystalline material layer (103), and a percentage p of a quantity of penetrating crystal grains (313) in a total quantity of crystal grains of the photoactive crystalline material layer (103) is 80%. The photoactive crystalline material layer (103) includes a backlight side (113) and a backlight crystal grain (31, 32, 33), where the backlight crystal grain (31, 32, 33) is a crystal grain exposed to the backlight side (113) and has a backlight crystal face exposed to the backlight side (113). At least one region of the backlight side (113) has an average flatness index R.sub.avg being 75.

The present application relates to a solar cell, a method for manufacturing the same, a photovoltaic module and a photovoltaic system. The solar cell includes: a substrate (110), including a first surface (S1) and a second surface (S2) being opposite to each other, wherein the first surface (S1) has a first region (A) and a second region (B) adjacent to each other in a first direction; a passivating contact layer (120), located in the first region (A) of the first surface (S1); a polysilicon layer (130) located on at least a part of a surface of the passivating contact layer (120) away from the substrate (110); the passivating contact layer (120) including a first tunneling layer (121) and a first doped layer (122), the first tunneling layer (121) and the first doped layer (122) being sequentially stacked on the first region (A) of the first surface (S1) of the substrate (110) in a direction away from the second surface (S2); and a first passivation layer (140), located on a surface of the polysilicon layer (130) away from the passivating contact layer (120) and on the second region (B) of the first surface (S1).

The present application relates to a solar cell, a method for manufacturing the same, a photovoltaic module and a photovoltaic system. The solar cell includes: a substrate (110), including a first surface (S1) and a second surface (S2) being opposite to each other, wherein the first surface (S1) has a first region (A) and a second region (B) adjacent to each other in a first direction; a passivating contact layer (120), located in the first region (A) of the first surface (S1); a polysilicon layer (130) located on at least a part of a surface of the passivating contact layer (120) away from the substrate (110); the passivating contact layer (120) including a first tunneling layer (121) and a first doped layer (122), the first tunneling layer (121) and the first doped layer (122) being sequentially stacked on the first region (A) of the first surface (S1) of the substrate (110) in a direction away from the second surface (S2); and a first passivation layer (140), located on a surface of the polysilicon layer (130) away from the passivating contact layer (120) and on the second region (B) of the first surface (S1).

The present application relates to a solar cell, a method for manufacturing the same, a photovoltaic module and a photovoltaic system. The solar cell includes: a substrate (110), including a first surface (S1) and a second surface (S2) being opposite to each other, wherein the first surface (S1) has a first region (A) and a second region (B) adjacent to each other in a first direction; a passivating contact layer (120), located in the first region (A) of the first surface (S1); a polysilicon layer (130) located on at least a part of a surface of the passivating contact layer (120) away from the substrate (110); the passivating contact layer (120) including a first tunneling layer (121) and a first doped layer (122), the first tunneling layer (121) and the first doped layer (122) being sequentially stacked on the first region (A) of the first surface (S1) of the substrate (110) in a direction away from the second surface (S2); and a first passivation layer (140), located on a surface of the polysilicon layer (130) away from the passivating contact layer (120) and on the second region (B) of the first surface (S1).

The present application relates to a solar cell, a method for manufacturing the same, a photovoltaic module and a photovoltaic system. The solar cell includes: a substrate (110), including a first surface (S1) and a second surface (S2) being opposite to each other, wherein the first surface (S1) has a first region (A) and a second region (B) adjacent to each other in a first direction; a passivating contact layer (120), located in the first region (A) of the first surface (S1); a polysilicon layer (130) located on at least a part of a surface of the passivating contact layer (120) away from the substrate (110); the passivating contact layer (120) including a first tunneling layer (121) and a first doped layer (122), the first tunneling layer (121) and the first doped layer (122) being sequentially stacked on the first region (A) of the first surface (S1) of the substrate (110) in a direction away from the second surface (S2); and a first passivation layer (140), located on a surface of the polysilicon layer (130) away from the passivating contact layer (120) and on the second region (B) of the first surface (S1).

An A/M/X crystalline material, a photovoltaic device, and preparation methods thereof are provided. The photovoltaic device includes a photoactive crystalline material layer. The photoactive crystalline material layer includes a penetrating crystal, where the penetrating crystal is a crystal penetrating through the photoactive crystalline material layer, and a percentage p of a quantity of penetrating crystals in a total quantity of crystals of the photoactive crystalline material layer is 80%. The photoactive crystalline material layer includes a backlight side and a backlight crystal, where the backlight crystal is a crystal exposed to the backlight side and has a backlight crystal face exposed to the backlight side. At least one region of the backlight side has an average flatness index R.sub.avg being 75.

An A/M/X crystalline material, a photovoltaic device, and preparation methods thereof are provided. The photovoltaic device includes a photoactive crystalline material layer. The photoactive crystalline material layer includes a penetrating crystal, where the penetrating crystal is a crystal penetrating through the photoactive crystalline material layer, and a percentage p of a quantity of penetrating crystals in a total quantity of crystals of the photoactive crystalline material layer is 80%. The photoactive crystalline material layer includes a backlight side and a backlight crystal, where the backlight crystal is a crystal exposed to the backlight side and has a backlight crystal face exposed to the backlight side. At least one region of the backlight side has an average flatness index R.sub.avg being 75.