A method for optimizing the aspect ratio of a metal grid based on surface modification includes: obtaining a photovoltaic module including a front electrode; providing a laser process on the front electrode; and forming protrusion structures on the top of the front electrode by laser induction, at least two rows of protrusion structure groups forming a confining space, so that the width of liquid applied is confined within the spacing between the two adjacent protrusion structure groups and the thickness of the liquid applied is confined within the height of the formed protruding. Since the upwardly shaped protrusion structures, which may be irregular structures, are formed by laser induction on the top of the front electrode composed of a material of the front electrode, the ink and/or paste applied are confined between two or more lines.

The present inventive concept relates to a solar cell manufacturing method, a solar cell manufactured thereby, and a substrate for a solar cell. The solar cell manufacturing method involves forming a separating portion for separating a substrate, which is for manufacturing the solar cell, into a plurality of pieces. The solar cell manufacturing method comprises: a step for preparing the substrate; a first substrate etching step for forming a first groove in one surface of the substrate; a second substrate etching step for forming a second groove inside the first groove; and a third substrate etching step for etching the substrate including the second groove, wherein the separating portion includes the first groove and the second groove.

The present inventive concept relates to a solar cell manufacturing method, a solar cell manufactured thereby, and a substrate for a solar cell. The solar cell manufacturing method involves forming a separating portion for separating a substrate, which is for manufacturing the solar cell, into a plurality of pieces. The solar cell manufacturing method comprises: a step for preparing the substrate; a first substrate etching step for forming a first groove in one surface of the substrate; a second substrate etching step for forming a second groove inside the first groove; and a third substrate etching step for etching the substrate including the second groove, wherein the separating portion includes the first groove and the second groove.

A semitransparent photovoltaic module includes a submodule with a first glass layer, a transparent conducting oxide layer, a semiconductor layer, and a metal back contact layer. The submodule further includes a plurality of interconnection scribes extending in a first direction across the submodule and a plurality of light transmission scribes disposed perpendicularly to the plurality of interconnection scribes in a second direction. The module may further include a lamination layer and a second glass layer and have a visible light transmission of about 7% to about 70% and is capable of generating about 60 W to about 120 W of power. In one embodiment, the light transmission scribes are about 0.05 mm to about 1 mm wide, with a pitch of about 1 mm to about 5 mm.

A semitransparent photovoltaic module includes a submodule with a first glass layer, a transparent conducting oxide layer, a semiconductor layer, and a metal back contact layer. The submodule further includes a plurality of interconnection scribes extending in a first direction across the submodule and a plurality of light transmission scribes disposed perpendicularly to the plurality of interconnection scribes in a second direction. The module may further include a lamination layer and a second glass layer and have a visible light transmission of about 7% to about 70% and is capable of generating about 60 W to about 120 W of power. In one embodiment, the light transmission scribes are about 0.05 mm to about 1 mm wide, with a pitch of about 1 mm to about 5 mm.

A thin film photovoltaic structure has a substrate, a first conductive layer, a photovoltaic layer, a second conductive layer, multiple serial connection conductive layers and multiple first insulating areas. By using the serial connection conductive layer, each width between each adjacent serially connected photovoltaic structures is reduced, and an effective area of the thin film photovoltaic structure for collecting optic energy is increased, thus enhancing a geometry fill factor of the thin film photovoltaic structure. Further, by using the serial connection conductive layer and the first insulating area to form contact overlap areas in an overlapping arrangement, it can effectively protect conductive areas in the first conductive layer when etching the second conductive layer during the manufacturing process, which prevents the conductive areas from being damaged to not act as electrodes, and efficiently increases a manufacture yielding rate of the thin film photovoltaic structure.

A thin film photovoltaic structure has a substrate, a first conductive layer, a photovoltaic layer, a second conductive layer, multiple serial connection conductive layers and multiple first insulating areas. By using the serial connection conductive layer, each width between each adjacent serially connected photovoltaic structures is reduced, and an effective area of the thin film photovoltaic structure for collecting optic energy is increased, thus enhancing a geometry fill factor of the thin film photovoltaic structure. Further, by using the serial connection conductive layer and the first insulating area to form contact overlap areas in an overlapping arrangement, it can effectively protect conductive areas in the first conductive layer when etching the second conductive layer during the manufacturing process, which prevents the conductive areas from being damaged to not act as electrodes, and efficiently increases a manufacture yielding rate of the thin film photovoltaic structure.

Thin film devices such as solar cells are typically patterned on substrates as thin films requiring that the devices be electrically isolated when arrays are formed and/or be mechanically separated for packaging. With the development of thin film processes based upon perovskite inks then large area substrates can be implemented. Further, such perovskite inks and their low temperature processing allow them to employ low temperature flexible and/or conformal substrates such as polymeric substrates for example. Accordingly, a requirement exists for electrical isolating and/or mechanically isolating thin film devices with different physical layer structures, different geometries etc. on a wide range of substrates.

Thin film devices such as solar cells are typically patterned on substrates as thin films requiring that the devices be electrically isolated when arrays are formed and/or be mechanically separated for packaging. With the development of thin film processes based upon perovskite inks then large area substrates can be implemented. Further, such perovskite inks and their low temperature processing allow them to employ low temperature flexible and/or conformal substrates such as polymeric substrates for example. Accordingly, a requirement exists for electrical isolating and/or mechanically isolating thin film devices with different physical layer structures, different geometries etc. on a wide range of substrates.

A manufacturing method includes: disposing serial layers on a first layer; etching the first layer to form first etch areas; etching a photovoltaic layer on the first layer and the serial layers to form photovoltaic etch areas and photovoltaic areas; disposing first insulating areas at the photovoltaic areas, in which the first insulating areas are respectively filled in the photovoltaic etch areas, and the first insulating areas respectively contact the serial layers to form contact overlap areas; and disposing a second layer to fill the second layer to make the second layer electrically connected to the serial layers, and etching the second layer to form second etch areas, in which the second etch areas are respectively disposed within areas, and a contact overlap area width of the contact overlap area is larger than a second etch area width of the second etch area.