Disclosed herein is a Schottky barrier diode that includes a semiconductor substrate and a drift layer made of gallium oxide, an anode electrode brought into Schottky contact with the drift layer, and a cathode electrode brought into ohmic contact with the semiconductor substrate. The drift layer has a trench at a position overlapping the anode electrode. The trench is covered at least at its bottom surface with a laminated insulating film and filled with a conductive material connected to the anode electrode. The laminated insulating has a structure in which first and second insulating films made of mutually different insulating materials are laminated. The insulating materials constituting the first and second insulating films have a bandgap equal to or higher than a bandgap of gallium oxide and have a dielectric constant equal to or higher than of a dielectric constant of gallium oxide.

A semiconductor device includes a trench disposed in an epitaxial layer on a substrate. A gate structure is disposed in the trench and includes upper and lower conductive portions. A dielectric isolation portion is disposed between the upper and lower conductive portions. A dielectric liner is disposed in the trench and has an opening on the bottom surface of the trench. The opening is filled up with a part of the lower conductive portion. A portion of the epitaxial layer and the lower conductive portion construct a Schottky barrier diode. A doped region is disposed in the epitaxial layer, under the bottom surface of the trench and on one side of the lower conductive portion. The portion of the epitaxial layer and a portion of the doped region are in contact with the lower conductive portion.

Provided are a junction barrier Schottky diode having a trench structure that has high surge resistance and reduced energy loss during switching operation, and a method for manufacturing the same. An embodiment provides a junction barrier Schottky diode 1 comprising: an n-type semiconductor layer 11 having a plurality of trenches 111; a p-type semiconductor film 12 provided in contact with an inner surface of the a plurality of trenches 111; an anode electrode 13 which is provided on a first surface 113 of the n-type semiconductor layer 11 and in contact with a mesa-shaped portion 112 of the n-type semiconductor layer 11, a part of the anode electrode 13 being covered by the p-type semiconductor film 12 in the plurality of trenches 111; and a cathode electrode 14 provided on a second surface 114 of the n-type semiconductor layer 11 directly or with another layer therebetween.

Semiconductor devices and integrated circuits implementing power converters are described. An integrated circuit integrated circuit can include a power stage, a driver and a bootstrap circuit. The driver can be configured to drive the power stage. The bootstrap circuit can be configured to drive a high-side switch in the power stage in a start-up process. The bootstrap circuit can include a capacitor and a diode. The power stage, the driver and the bootstrap circuit can be integrated on the same silicon. The capacitor can be implemented by at least one trench capacitor.

A self-aligned lithography process for the fabrication of an electronic device having predefined areas of a second semiconductor material having a second conductivity type deposited into trenches formed in a first semiconductor material layer having a first conductivity type. A single lithography mask is used for etching trenches in the first semiconductor material, enabling cleaning of the trenches, and providing defined areas for the deposition of the second semiconductor material into the first semiconductor material. The presence of the areas of the second semiconductor material within the first semiconductor material creates a heterojunction beneath a metal for the formation of a first type of contact to the first semiconductor material and a second type of contact to the second type of material. By using a single mask for the etching, cleaning, and filling steps, misalignment issues plaguing devices having small (1-2 m) feature sizes is eliminated.

To prevent dielectric breakdown of a Schottky barrier diode using gallium oxide. A Schottky barrier diode has a drift layer provided on a semiconductor substrate, an anode electrode, and a cathode electrode. A part of the anode electrode is embedded in an outer peripheral trench and a center trench through an insulating film. The insulating film is formed such that the thickness thereof in the depth direction of the outer peripheral trench becomes larger toward the outside, whereby an outer peripheral wall S1 of the anode electrode embedded in the outer peripheral trench is curved so as to approach vertical toward the outside. This results in relaxation of an electric field which occurs at the outer peripheral bottom portion of the outer peripheral trench upon application of a backward voltage.

Disclosed herein is a Schottky barrier diode that includes: semiconductor substrate; a drift layer provided on the semiconductor substrate; a field insulating film covering an annular outer peripheral area of an upper surface of the drift layer; an anode electrode brought into Schottky-contact with a center area of the upper surface of the drift layer that is surrounded by the outer peripheral area, an end portion of the anode electrode being positioned on the field insulating film; a cathode electrode brough into ohmic contact with the semiconductor substrate; a first conductive member embedded in a first trench formed in the center area of the drift layer through an insulating film so as to be connected to the anode electrode; and a second conductive member contacting the field insulating film and electrically connected to the semiconductor substrate.

A process of forming an electronic device can form an accumulation channel or an integrated diode by selective doping parts of a workpiece. In an embodiment, a doped region can be formed by implanting a sidewall of a body region. In another embodiment, a doped region can correspond to a remaining portion of a semiconductor layer after forming another doped region by implanting into a contact opening. The accumulation channel or the integrated diode can lower the barrier for a body diode turn-on. Reduced stored charge and Q.sub.RR may be achieved, leading to lower switching losses.

A semiconductor device having a termination structure is provided that is useful for trench semiconductor devices, such as trench Schottky diodes. The device includes a termination structure having a primary termination trench including a first insulating layer arranged on a sidewall and bottom, and a first polysilicon region spaced apart from the sidewall and bottom by the first insulating layer; and a secondary termination trench arranged further away from the active region than the primary termination trench. The secondary termination trench includes a second insulating layer arranged on a sidewall and bottom, and polysilicon spacers separated from the sidewall and bottom by the second insulating layer. The polysilicon spacers are spaced apart and arranged on opposing ends of the secondary termination trench in an outward direction with respect to the active region, and a width of the primary termination trench is less than a width of the secondary termination trench.

A Schottky barrier diode includes an anode electrode which is brought into Schottky contact with a drift layer, a cathode electrode which is brought into ohmic contact with a semiconductor substrate, an insulating film covering the inner wall of a trench formed in the drift layer, a metal film covering the inner wall of the trench through the insulating film and electrically connected to the anode electrode, and a field insulating layer. The field insulating layer includes a first part positioned between an upper surface of the drift layer and the anode electrode and a second part covering the inner wall of the trench through the metal film and insulating film. With this configuration, even when misalignment occurs between the trench and the field insulating layer, dielectric breakdown can be prevented.