A thermoelectric conversion element that includes a laminated body having a plurality of first thermoelectric conversion portions, a plurality of second thermoelectric conversion portions, and an insulator layer. The first thermoelectric conversion portions and the second thermoelectric conversion portions are alternately arranged in a Y-axis direction and bonded to each other in first regions, and the insulator layer is interposed between the first thermoelectric conversion portions and the second thermoelectric conversion portions in second regions. The insulator layer surrounds a periphery of each of the second thermoelectric conversion portions. A ratio (W2/W1) of a thickness (W2) of the first thermoelectric conversion portion to a thickness (W1) of the second thermoelectric conversion portion in the Y-axis direction is greater than 4 and 11 or less.

Systems and methods include an electrical switch that establishes a first electrical conducting path between terminals of an electrical measurement apparatus through one or more electrical leads and an electrically-conductive sample in a first state, and a second electrical conducting path between the terminals through the one or more electrical leads while bypassing the sample in a second state. A voltage V.sub.S+L is measured across all of the sample and the one or more electrical leads in the first state, while a voltage V.sub.L is measured across the one or more electrical leads while bypassing the sample in the second state. Calculations according to the equation V.sub.S=V.sub.S+L−V.sub.L are performed to determine a precision DC voltage measurement of a voltage across the sample V.sub.S in the absence of Seebeck voltage offsets contributed by the one or more electrical leads.

Differential thermoelectric devices are provided for monitoring a change of areal thermal energy dissipation rate and surface temperature profile. The devices include a through electrode connecting to different sets of thermoelectric elements at different regions of the device. A sensing circuitry is electrically connected to the thermoelectric elements to measure a voltage output.

A thermoelectric material including a thermoelectric element including thermoelectric inorganic material represented by Chemical Formula 1; and a conduction path in contact with a surface of the thermoelectric element, wherein the conduction path is formed of a conductive material having electrical conductivity of greater than or equal to about 1,000 Siemens per centimeter
Bi.sub.xSb.sub.(2-x)Te.sub.(3-y-z)Se.sub.yS.sub.z   Chemical Formula 1 wherein 0<x≤2, 0≤y≤3, 0≤z≤3, and 0≤y+z≤3.

A thermoelectric conversion material has a composition represented by the chemical formula Li.sub.3-aBi.sub.1-bSi.sub.b, in which the range of values a and b is: 0≤a≤0.0001, and −a+0.0003≤b≤0.023; 0.0001≤a<0.0003, and −a+0.0003≤b≤exp[−0.046×(ln(a)).sup.2−1.03×ln(a)−9.51]; or 0.0003≤a≤0.085, and 0<b≤exp[−0.046×(ln(a)).sup.2−1.03×ln(a)−9.51], and in which the thermoelectric conversion material has a BiF.sub.3-type crystal structure and has a p-type polarity.

A semiconductor sintered body comprising a polycrystalline body, wherein the polycrystalline body comprises magnesium silicide or an alloy containing magnesium silicide, and the average grain size of the crystal grains constituting the polycrystalline body is 1 μm or less, and the electrical conductivity is 10,000 S/m or higher.

Connection with a wiring structure can be reliably achieved, whereby a semiconductor sensor device and a semiconductor sensor device manufacturing method with increased reliability are provided. A semiconductor sensor device in which a multiple of signal lines and a sensor detection portion are disposed includes a conductive film, disposed on a substrate, that configures the signal lines and whose upper face is exposed by an aperture portion of a width smaller than a width of the signal lines, a conductive member formed on the conductive film and electrically connected to the conductive film via the aperture portion, and a wiring structure, formed on an upper face of the conductive member, of an air bridge structure that connects the signal lines or the signal lines and the sensor detection portion, wherein an upper surface of the conductive member is in contact with the wiring structure, and a side face is exposed.

Described herein are devices incorporating Casimir cavities, which modify the quantum vacuum mode distribution within the cavities. The Casimir cavities can create energy differences within layers or device to drive energy from or to a portion of a layer disposed adjacent to or contiguous with the Casimir cavity by modifying the quantum vacuum mode distribution incident on one portion of the layer to be different from the quantum vacuum mode distribution incident on another portion of the layer. Additionally, Casimir cavities in which the cavity layer comprises a conductor that can be used to carry a flow of electrical power induced by the presence of the Casimir cavity.

An imager pixel comprising a micro-platform supported by phononic nanowires, the nanowires providing an extreme-level of thermal isolation from a surrounding substrate. The micro-platform in embodiments comprises thermal sensors sensitive to heat from absorbed incident longwave/shortwave photonic irradiation. In embodiments, the pixel photonic sensing structure comprises both a thermal sensor together with a separate photodiode/phototransistor/photogate for sensing RGB and NIR wavelengths. Some embodiments comprise a micro-platform with an integral Peltier thermoelectric element permitting in situ refrigeration to cryogenic temperatures.

Disclosed is system, method, and rack stand portion for the advantageous cooling of computer equipment. When multiple instances of computer equipment are managed from a central authority, cooling, heating, and/or cessation of either can be controlled in a way that enhances efficiency. Impediments that control access channels and interior access to computer equipment is toggled by the present invention.