A TEG system is attached to a rotating shaft and generates electricity from radiant energy that is substantially radiatively transmitted through the atmosphere from a stationary source to the TEG system that is rotating with the shaft. The rotation of the shaft provides cooling to the TEG system, but not heat energy. The TEG system includes at least one TEG, each TEG equipped with an energy receiving and heat containment window and an energy conversion system in combination with controlled convection cooling enhanced by an airflow moving in response to the rotation of the rotating shaft. Individual TEGs having controlled convection cooling also are described.

A light source device includes: a plurality of light sources that generate rays of light with different wavelengths corresponding to a plurality of target wavelengths located on a designated wavelength grid; a plurality of photodetectors that detect output powers of the plurality of light sources; a plurality of optical bandpass filters that are provided between the plurality of light sources and the plurality of photodetectors; a temperature adjustment unit that adjusts a temperature of an area around the plurality of light sources; and a processor that controls the temperature adjustment unit based on output signals of the plurality of photodetectors. Widths of passbands of the optical bandpass filters are less than a wavelength spacing in the wavelength grid.

The present invention relates to a clothes-handing apparatus comprising: a cabinet having a holder opening provided at an upper panel; an air moving part provided inside the cabinet so as to generate an air flow; a holder which is withdrawable from the cabinet through the holder opening and on which clothes are hung; and holder air holes provided at the holder so as to supply air to the clothes hung on the holder.

Provided is a semiconductor device manufacturing method which can suppress the occurrence of positional deviation or inclination of a semiconductor element when the semiconductor element is fixed so as to be sandwiched-between two insulating substrates. The semiconductor device manufacturing method includes: obtaining a laminated body in which a semiconductor element is temporarily adhered on a first electrode formed on a first insulating substrate with a first pre-sintering layer sandwiched therebetween; temporarily adhering the semiconductor element on a second electrode formed on a second insulating substrate with a second pre-sintering layer sandwiched therebetween, the second pre-sintering layer being provided on a side opposite to the first pre-sintering layer, to obtain a semiconductor device precursor; and simultaneously heating the first pre-sintering layer and the second pre-sintering layer, to bond the semiconductor element to the first electrode and the second electrode.

A thermoelectric material, having a formula Tb.sub.xM1.sub.y-xM2.sub.zO.sub.w where M1 is one of Ca, Mg, Sr, Ba and Ra, M2 is at least one of Co, Fe, Ni, and Mn, x ranges from 0.01 to 5; y is 1, 2, 3, or 5; z is 1, 2, 3, or 4; and w is 1, 2, 3, 4, 5, 7, 8, 9, or 14. The thermoelectric material is chemically stable within 5% for one year and is also non-toxic. The thermoelectric material can also be incorporated into a thermoelectric system which can be used to generate electricity from waste heat sources or to cool an adjacent region.

An apparatus and method perform supersonic cold-spraying to deposit N and P-type thermoelectric semiconductor, and other polycrystalline materials on other materials of varying complex shapes. The process developed has been demonstrated for bismuth and antimony telluride formulations as well as Tetrahedrite type copper sulfosalt materials. Both thick and thin layer thermoelectric semiconductor material is deposited over small or large areas to flat and highly complex shaped surfaces and will therefore help create a far greater application set for thermoelectric generator (TEG) systems. This process when combined with other manufacturing processes allows the total additive manufacturing of complete thermoelectric generator based waste heat recovery systems. The processes also directly apply to both thermoelectric cooler (TEC) systems, thermopile devices, and other polycrystalline functional material applications.

A thermal control system includes a component having a surface. A plurality of thermal generating devices include a first conductive plate, second and third conductive plates, a first semiconductor device arranged between the first conductive plate and the second conductive plate, and a second semiconductor device arranged between the first conductive plate and the third conductive plate. The first semiconductor device and the second semiconductor device have different types of doping. First ones of the plurality of thermal generating devices are arranged with the first conductive plate located adjacent to the surface of the component. Second ones of the plurality of thermal generating devices are arranged with the second and third conductive plates located adjacent to the surface of the component. The first ones and the second ones of plurality of thermal generating devices perform heating and cooling of the surface, respectively.

An integrated flexible thermoelectric device includes p-type carbon nanoparticle regions and n-type carbon nanoparticle regions which are alternately and continuously connected to each other. In particular, the p-type carbon nanoparticle regions and the n-type carbon nanoparticle regions are formed on the one carbon nanoparticle paper.

An exemplary charging energy recapture assembly includes a fluid loop outside a traction battery of an electrified vehicle. The fluid loop communicates a charger fluid through a charger to the electrified vehicle and returns the charger fluid to a charging station without combining the charger fluid with a vehicle fluid. An exemplary charging energy recapture method includes circulating a charger fluid through a charger between a charging station and an electrified vehicle without the charger fluid commingling with a vehicle fluid or communicating through a traction battery of the electrified vehicle.

An apparatus and method perform supersonic cold-spraying to deposit N and P-type thermoelectric semiconductor, and other polycrystalline materials on other materials of varying complex shapes. The process developed has been demonstrated for bismuth and antimony telluride formulations as well as Tetrahedrite type copper sulfosalt materials. Both thick and thin layer thermoelectric semiconductor material is deposited over small or large areas to flat and highly complex shaped surfaces and will therefore help create a far greater application set for thermoelectric generator (TEG) systems. This process when combined with other manufacturing processes allows the total additive manufacturing of complete thermoelectric generator based waste heat recovery systems. The processes also directly apply to both thermoelectric cooler (TEC) systems, thermopile devices, and other polycrystalline functional material applications.