To provide a stress relaxation structure that can achieve both high thermal conductivity and high thermal stress relaxation ability and has excellent vibration durability, and a thermoelectric conversion module having such a stress relaxation structure. The stress relaxation structure includes a rolled-up body having a first thermal conductor and a second thermal conductor that are alternately rolled up. The first thermal conductor is metal foil, and the second thermal conductor is porous metal foil.

A thermoelectric module (13), for converting thermal energy into electric energy, includes a plurality of leg pairs (26), which have each a p-doped semiconductor leg (27) and an n-doped semiconductor leg (28), which are contacted with one another electrically via metal bridges (29). At least one electrically insulating ceramic plate (30), which is arranged on a hot side (18) of the thermoelectric module (13) or on a cold side (19) of the thermoelectric module (13) and is flatly in contact with metal bridges (29) associated with this side (18, 19) and is fastened thereto. The pressure stability of the thermoelectric module (13) can be improved if the respective ceramic plate (30) is segmented, so that a plurality of ceramic plate segments (31) are arranged next to each other, which are each flatly in contact with a plurality of metal bridges (29) and are fastened thereto.

The present invention relates to a thermoelectric module, and a thermoelectric module according to an exemplary embodiment of the present invention includes: a plurality of thermoelectric elements that are disposed between a heat transmission member and a cooling member; and a first electrode layer and a second electrode layer that are respectively disposed between the heat transmission member and the plurality of thermoelectric elements and between the cooling member and the plurality of thermoelectric elements, wherein the plurality of thermoelectric elements may include P-type thermoelectric elements and N-type thermoelectric elements, and a P-type thermoelectric element and an N-type thermoelectric element that neighbor each other may have different heights, and one electrode layer selected from among the first electrode layer and the second electrode layer formed throughout the P-type thermoelectric element and the N-type thermoelectric element that neighbor each other may have at least two bent portions.

A multi-purpose Micro-Electro-Mechanical Systems (MEMS) thermopile sensor able to use as a thermal conductivity sensor, a Pirani vacuum sensor, a thermal flow sensor and a non-contact infrared temperature sensor, respectively. The sensor comprises a rectangular membrane created in a silicon substrate which has a thin polysilicon layer and a thin residual thermal reorganized porous silicon layer both attached on its back side, and configured to have its three sides clamped to the frame formed in the silicon substrate which surrounds and supports the membrane and the other side free to the frame, a cavity created in the silicon substrate, positioned under the membrane and having its flat bottom opposite to the membrane, its three side walls shaped as curved planes and the other side wall shaped as a vertical plane, a heater or an infrared absorber positioned on the membrane, close to and parallel with the free side of the membrane and a thermopile positioned on the membrane and consists of several thermocouples connected in series and having its hot junctions close to the heater and its cold junctions extended to the frame.

A semiconductor structure comprises one or more semiconductor devices, each of the semiconductor devices having two or more electrical connections; one or more first conductors connected to a first electrical connection on the semiconductor device, the first conductor comprising a first material having a positive Seebeck coefficient; and one or more second conductors connected to a second electrical connection on the semiconductor device, the second conductor comprising a second material having a negative Seebeck coefficient. The first conductor and the second conductor conduct electrical current through the semiconductor device and conduct heat away from the semiconductor device.

In described examples, an integrated circuit containing CMOS transistors and an embedded thermoelectric device may be formed by forming active areas which provide transistor active areas for an NMOS transistor and a PMOS transistor of the CMOS transistors and provide n-type thermoelectric elements and p-type thermoelectric elements of the embedded thermoelectric device. Stretch contacts with lateral aspect ratios greater than 4:1 are formed over the n-type thermoelectric elements and p-type thermoelectric elements to provide electrical and thermal connections through metal interconnects to a thermal node of the embedded thermoelectric device. The stretch contacts are formed by forming contact trenches in a dielectric layer, filling the contact trenches with contact metal and subsequently removing the contact metal from over the dielectric layer. The stretch contacts are formed concurrently with contacts to the NMOS and PMOS transistors.

A semiconductor device and method of making same are disclosed. In some embodiments, a method includes: forming a first thermoelectric conduction leg on a substrate; forming a second thermoelectric conduction leg on the substrate to be aligned with the first thermoelectric conduction leg along a same row; forming at least one intermediate thermoelectric conduction structure on an end of the second thermoelectric conduction leg; forming a contact structure to couple the first and second thermoelectric conduction legs via the at least one intermediate thermoelectric conduction structure; and recessing the substrate to form at least one trench substantially adjacent to a respective side edge of either the first thermoelectric conduction leg or the second thermoelectric conduction leg.

An active cooling structure, comprising a non-superconducting layer, a superconducting layer, and an array of Superconductor-Insulator-Normal Metal (NIS) tunnel junctions. The non-superconducting layer may comprise a plurality of non-superconducting traces. The superconducting layer may comprise a plurality of superconducting traces. The array of Superconductor-Insulator-Normal Metal (NIS) tunnel junctions may be located between the plurality of non-superconducting traces and the plurality of superconducting traces.

A TEG system is attached to a rotating shaft and generates electricity from radiant energy that is substantially radiatively transmitted through the atmosphere from a stationary source to the TEG system that is rotating with the shaft. The rotation of the shaft provides cooling to the TEG system, but not heat energy. The TEG system includes at least one TEG, each TEG equipped with an energy receiving and heat containment window and an energy conversion system in combination with controlled convection cooling enhanced by an airflow moving in response to the rotation of the rotating shaft. Individual TEGs having controlled convection cooling also are described.

A circuit includes a thermoelectric structure and an energy device. The thermoelectric structure includes a wire and p-type and n-type regions positioned on a front side of a substrate, the wire configured to electrically couple the p-type region to the n-type region, a first via configured to thermally couple the p-type region to a first power structure on a back side of the substrate, and a second via configured to thermally couple the n-type region to a second power structure on the back side of the substrate. The energy device is electrically coupled to each of the first and second power structures.