A thermoelectric conversion element (1) having, on a substrate (12), a first electrode (13), a thermoelectric conversion layer (14), and a second electrode 15, wherein a nano conductive material and a low band gap material are contained in the thermoelectric conversion layer (14); an article for thermoelectric power generation and a power supply for a sensor using the thermoelectric conversion element (1); and a thermoelectric conversion material containing the nano conductive material and the low band gap material.

A heat engine that utilizes a controllable heat source that includes a body comprising a dopant that has an affinity for a fuel species, preferably a hydrogen isotope. The production of heat by the heat source can be modulated by the application of electric and/or magnetic fields to the body. The hear engine includes safety features that prevent excessive heat generation.

Compound semiconductors, expressed by the following formula: Bi.sub.1-xM.sub.xCu.sub.wO.sub.a-yQ1.sub.yTe.sub.b-zQ2.sub.z. Here, M is at least one element selected from the group consisting of Ba, Sr, Ca, Mg, Cs, K, Na, Cd, Hg, Sn, Pb, Eu, Sm, Mn, Ga, In, Tl, As and Sb; Q1 and Q2 are at least one element selected from the group consisting of S, Se, As and Sb; x, y, z, w, a, and b are 0x<1, 0<w1, 0.2<a<4, 0y<4, 0.2<b<4 and 0z<4. These compound semiconductors may be used for various applications such as solar cells or thermoelectric conversion elements, where they may replace compound semiconductors in common use, or be used along with compound semiconductors in common use.

A thermoelectric composite includes a plurality of particles comprising a crosslinked polymer having a heat deflection temperature greater than or equal to 200 F. and a segregated network comprising a first filler material which is disposed between the particles to produce a thermoelectric response in response to application of a voltage difference or temperature difference across the thermoelectric composite. The first filler material includes a carbon material, a metal, a metal disposed on a carbon material, or a combination thereof. A process for preparing a thermoelectric article includes combining a first filler material and a plurality of particles comprising a polymer to form a composition and molding the composition to form a thermoelectric article, wherein the thermoelectric article is configured to produce a thermoelectric response in response to application of a voltage difference or temperature difference across the article.

A thermoelectric conversion device includes a Heusler alloy film having a structure of B.sub.2 or L.sub.21 in notation of A.sub.2BC and a pair of electrodes on the Heusler alloy film to output an electromotive force generated by a thermal gradient in the Heusler alloy film. The thermoelectric conversion device further includes an electrode for applying an electric field or a voltage to the Heusler alloy film to increase and control an electric conductivity and a Seebeck coefficient S of the Heusler metal film. The device can control to increase an electric conductivity and Seebeck coefficient S by applying an electric field or a voltage through an insulation film to the Heusler alloy film. The device may have a shared connection to select one of outputs of a plurality of thermoelectric conversion devices arranged in a matrix or increase an electromotive force as an output.

The invention relates to a method for producing a thermoelectric component or at least one semi-finished product of same, in which a multiplicity of thermolegs made of a thermoelectrically active material are introduced into an essentially planar substrate made of an electrically and thermally insulating substrate material such that the thermolegs extend through the substrate essentially perpendicular to the substrate plane, and in which the active material is provided in pulverulent form, is pressed to give green bodies and is then sintered within the substrate to give thermolegs. It is based on the object of refining the method of the generic type mentioned in the introduction so as to increase the freedom of choice of the thermally and electrically insulating substrate material. The object is achieved in that the pulverulent active material is pressed, in a mould arranged outside the substrate, to give green bodies, the green bodies are pushed out of the mould and into holes provided in the substrate, where they are sintered to give thermolegs.

A novel semiconductor device is provided. The semiconductor device includes a first resistor and a second resistor. The first resistor and the second resistor are electrically connected in series. A resistance material of the first resistor includes a metal oxide, and a resistance material of the second resistor is different from the resistance material of the first resistor. The semiconductor device is configured to output a voltage corresponding to the resistance values of the first resistor and the second resistor. The voltage reflects the properties of the resistance materials of the first resistor and the second resistor. The semiconductor device may include a circuit for processing this voltage. In that case, the first resistor can be stacked over the circuit, resulting in the downsizing of the semiconductor device.