The present disclosure generally relates to broadband antireflective coatings for reducing reflection of light in the infrared without compromising visible light reflectance in multijunction solar cells bonded to coverglass, and methods of forming the same. The antireflective coatings include a high index, one or more intermediate index, and low index of refraction dielectric layers. The high index dielectric layer utilizes an ion beam assisted deposition to maximize the density and index of refraction. The intermediate index layer(s) increase the bandwidth of the antireflection coating, thereby improving the performance of the antireflective coating in the infrared spectrum.

Provided is a tandem photovoltaic device comprising: a top cell, a bottom cell, and a first light-trapping structure, in stacking, wherein a band-gap width of the top cell is larger than that of the bottom cell; and at least one of a second light-trapping structure located on a side of a shading surface of the bottom cell and a third light-trapping structure located on a side of a phototropic surface of the top cell; the three light-trapping structures are selected from metal or semiconductor material, and localized surface plasmons generated by the three light-trapping structures correspond to different peaks of light-wave response; and the three light-trapping structures form microstructures on a first cross section, average sizes d1, d2 and d3 of projections of the microstructures and average distances w1, w2 and w3 between the microstructures have relationships: $2{\left(\frac{w1}{w2}\right)}^2.Math.\frac{d2}{d1}16,\mathrm{and}/\mathrm{or}2{\left(\frac{w3}{w1}\right)}^2.Math.\frac{d1}{d3}16.$

Provided is a tandem photovoltaic device comprising: a top cell, a bottom cell, and a first light-trapping structure, in stacking, wherein a band-gap width of the top cell is larger than that of the bottom cell; and at least one of a second light-trapping structure located on a side of a shading surface of the bottom cell and a third light-trapping structure located on a side of a phototropic surface of the top cell; the three light-trapping structures are selected from metal or semiconductor material, and localized surface plasmons generated by the three light-trapping structures correspond to different peaks of light-wave response; and the three light-trapping structures form microstructures on a first cross section, average sizes d1, d2 and d3 of projections of the microstructures and average distances w1, w2 and w3 between the microstructures have relationships: $2{\left(\frac{w1}{w2}\right)}^2.Math.\frac{d2}{d1}16,\mathrm{and}/\mathrm{or}2{\left(\frac{w3}{w1}\right)}^2.Math.\frac{d1}{d3}16.$

Embodiments of the present disclosure relate to a solar cell and a photovoltaic module. The solar cell includes a thin-film solar cell and a bottom cell stacked in a first direction. The bottom cell has a stacked structure in the first direction including: a transparent conductive layer, a first doped conductive layer, an intrinsic amorphous silicon layer, a substrate, a selective passivation layer, and one or more electrodes. The selective passivation layer covers a portion of a surface of the substrate away from the intrinsic amorphous silicon layer and includes a plurality of passivation contact structures arranged at intervals in a second direction. Each passivation contact structure includes a tunneling layer and a second doped conductive layer stacked in the first direction. The electrodes are formed on a surface of the selective passivation layer away from the substrate and are in ohmic contact with second doped conductive layers.

A low bandgap absorber region (LBAR) used in a laser power converter (LPC). The laser power converter is comprised of one or more subcells on a substrate, wherein at least one of the subcells has an emitter and base, with the low bandgap absorber region coupled between the emitter and base. The emitter and base are comprised of a material with a bandgap higher than a wavelength of incident laser light, and the low bandgap absorber region is comprised of a material with a bandgap lower than the emitter and base. The emitter and base are transparent to the incident laser light, and the low bandgap absorber region absorbs the incident laser light and generates a current in response thereto, such that the current is controlled by the material and thickness of the low bandgap absorber region. The low bandgap absorber region is configured to produce a current balanced to the subcells connected in series.

A low bandgap absorber region (LBAR) used in a laser power converter (LPC). The laser power converter is comprised of one or more subcells on a substrate, wherein at least one of the subcells has an emitter and base, with the low bandgap absorber region coupled between the emitter and base. The emitter and base are comprised of a material with a bandgap higher than a wavelength of incident laser light, and the low bandgap absorber region is comprised of a material with a bandgap lower than the emitter and base. The emitter and base are transparent to the incident laser light, and the low bandgap absorber region absorbs the incident laser light and generates a current in response thereto, such that the current is controlled by the material and thickness of the low bandgap absorber region. The low bandgap absorber region is configured to produce a current balanced to the subcells connected in series.

A method of fabricating four junction solar cell wherein the selection of the composition of the subcells and their band gaps maximizes the efficiency at high temperature (in the range of 50 to 100 degrees Centigrade) in deployment in space at a specific predetermined time after initial deployment (referred to as the beginning of life or BOL), such predetermined time being referred to as the end-of-life (EOL), and being at least five years after the BOL, such selection being designed not to maximize the efficiency at BOL but to increase the solar cell efficiency at the EOL while disregarding the solar cell efficiency achieved at the BOL, such that the solar cell efficiency designed at the BOL is less than the solar cell efficiency at the BOL that would be achieved if the selection were designed to maximize the solar cell efficiency at the BOL.

Solar cell assembly that includes at least first and second solar cells arranged adjacent each other to form a row. First electric contact pad of first solar cell is positioned adjacent to second electric contact pad of second solar cell and second electric contact pad of first solar cell is positioned adjacent to first electric contact pad of second solar cell. Interconnectors connect each first electric contact pad of first solar cell with adjacent second electric contact pad of second solar cell and each second electric contact pad of first solar cell with adjacent first electric contact pad of second solar cell. Each interconnector is sized so that, between adjacent cells, interconnector is below first electric contact pad. Cover glass is provided on a front surface of each solar cell, and each interconnector is provided with a cover member covering a front surface of interconnector.

A multi-junction solar cell comprising a high-crystalline silicon solar cell and a high-crystalline germanium solar cell. The high-crystalline silicon solar including a first p-doped layer and a n+ layer and the high-crystalline germanium solar cell including a second p layer and a heavily doped layer. The multi-junction solar cell can also be comprised of a heavily doped silicon layer on a non-light receiving back surface of the high-crystalline germanium solar cell and a tunnel junction between the high-crystalline silicon solar cell and the high-crystalline germanium solar cell.

A multi-junction solar cell comprising a high-crystalline silicon solar cell and a high-crystalline germanium solar cell. The high-crystalline silicon solar including a first p-doped layer and a n+ layer and the high-crystalline germanium solar cell including a second p layer and a heavily doped layer. The multi-junction solar cell can also be comprised of a heavily doped silicon layer on a non-light receiving back surface of the high-crystalline germanium solar cell and a tunnel junction between the high-crystalline silicon solar cell and the high-crystalline germanium solar cell.