Provided are a display base plate and a preparation method thereof and a display apparatus, belonging to the technical field of display devices. The display base plate comprises a substrate, and a light-emitting diode and a driving circuit which are patterned and arranged on one side of the substrate, and the light-emitting diode comprises a first semiconductor layer, a light-emitting layer and a second semiconductor layer which are stacked; and the driving circuit is respectively connected with the first semiconductor layer and the second semiconductor layer, and is used for driving the light-emitting diode to emit light. By the display base plate and the preparation method thereof and the display apparatus provided by the embodiment of the application, the difficulty of integrating the driving circuit and the light-emitting diode in the display base plate can be reduced, so that a preparation process of the display base plate is simpler.

A wiring substrate, a manufacturing method thereof, a light-emitting panel, and a display device are disclosed. The wiring substrate includes: a base substrate (11); and a plurality of metal traces (50) and an organic insulating layer (13), which are located at one side of the base substrate. The metal traces (50) each comprise a first metal layer (141) and a second metal layer (151), which are stacked; the first metal layer (141) is located between the second metal layer (151) and the base substrate (11); an angle between a side wall of the second metal layer (151) and the base substrate (11) is greater than or equal to 90; the area of a contact face between each of the metal traces (50) and the base substrate (11) is greater than or equal to the area of the surface of the second metal layer (151) opposite the first metal layer (141).

A display device includes a substrate in which a plurality of sub pixels are defined; a pair of low potential power lines are in a sub pixel of the plurality of sub pixels; and a plurality of light emitting diodes that overlap an area between the pair of low potential power lines. Each of the plurality of light emitting diodes includes a first semiconductor layer; an emission layer; a second semiconductor layer; a first insulating film that encloses side surfaces of the first semiconductor layer, the emission layer, and the second semiconductor layer; a side electrode on the first insulating film; and a first electrode that is in contact with a bottom surface of the first semiconductor layer and a lower part of the side electrode.

Light-emitting diode (LED) packages and more particularly a light collector for light mixing in LED packages to improve the far field emission pattern (FFP) of the LED packages are disclosed. The LED package can include one or more LED chips with different wavelength ranges, and the light collector placed over the LED chips can have a reflective surface, save for a reduced aperture through which the light from the LED chips can be emitted after mixing in the light collector. The LED package can also include a lens to further improve the FFP. In an embodiment, the light collector can include diffuser material to facilitate the mixing of the light within the light collector. The LED package with the light collector mixes multiple emission point sources into a single point source, or reduced-area source, that considerably improves the FFP of multi-colored LED chips of the LED package.

A display device includes a first electrode and a second electrode which are spaced apart from each other on a substrate. A light emitting element is disposed between the first electrode and the second electrode. A light emitting element core of the light emitting element includes a first semiconductor layer, a second semiconductor layer spaced apart from the first semiconductor layer, and a light emitting layer disposed between the first semiconductor layer and the second semiconductor layer. A first element insulating layer surrounds a side surface of the light emitting element core. The first element insulating layer is an oxide insulating layer having a single crystalline structure.

A wafer with micro integrated circuits includes a transparent substrate and a plurality of micro components. The micro components are each attached to the transparent substrate by a plurality of transparent adhesive layers. Each of the micro components includes a bonding pad in direct contact with the transparent adhesive layer and an etching stop layer located on the side of the micro components opposite from the bonding pad.

A semiconductor light-emitting apparatus includes: a package substrate; a semiconductor light-emitting element flip-chip bonded on the package substrate; a frame body provided around the semiconductor light-emitting element on the package substrate; and a sealing member that covers the semiconductor light-emitting element on the package substrate, covers an upper surface of the frame body, and has translucency at an emission wavelength of the semiconductor light-emitting element. A height of the upper surface of the frame body is smaller than a height ha of an upper surface of the semiconductor light-emitting element.

A semiconductor light emitting device includes a semiconductor light source, a resin package surrounding the semiconductor light source, and a lead fixed to the resin package. The lead is provided with a die bonding pad for bonding the semiconductor light source, and with an exposed surface opposite to the die bonding pad The exposed surface is surrounded by the resin package in the in-plane direction of the exposed surface.

Direct-bonded LED arrays and applications are provided. An example process fabricates a LED structure that includes coplanar electrical contacts for p-type and n-type semiconductors of the LED structure on a flat bonding interface surface of the LED structure. The coplanar electrical contacts of the flat bonding interface surface are direct-bonded to electrical contacts of a driver circuit for the LED structure. In a wafer-level process, micro-LED structures are fabricated on a first wafer, including coplanar electrical contacts for p-type and n-type semiconductors of the LED structures on the flat bonding interface surfaces of the wafer. At least the coplanar electrical contacts of the flat bonding interface are direct-bonded to electrical contacts of CMOS driver circuits on a second wafer. The process provides a transparent and flexible micro-LED array display, with each micro-LED structure having an illumination area approximately the size of a pixel or a smallest controllable element of an image represented on a high-resolution video display.

A light emitting device including: a substrate; a light emitting element on the substrate, and having a first end and a second end in a longitudinal direction; first and second banks on the substrate and spaced apart from each other with the light emitting element interposed therebetween; a first electrode on the first bank and adjacent to the first end of the light emitting element; a second electrode on the second bank and adjacent to the second end of the light emitting element; a first contact electrode coupling the first electrode and the first end of the light emitting element, and a second contact electrode coupling the second electrode and the second end of the light emitting element. When viewed on a plane, the first electrode partially overlaps the first bank, and the second electrode partially overlaps the second bank.