Provided are liquid crystal display and the method for manufacturing the same. According to an aspect of the present invention, there is provided a liquid crystal display device, including a first substrate; a gate electrode disposed on the first substrate; a semiconductor pattern layer disposed on the gate electrode; and a source electrode and a drain electrode disposed on the semiconductor pattern layer and facing each other, wherein a diffusion prevention pattern is disposed on the semiconductor pattern layer to prevent diffusion into the semiconductor pattern layer or to maintain uniform thickness of the semiconductor pattern layer.

A liquid crystal display device includes a TFT substrate having a first alignment film and an opposing substrate having a second alignment film with liquid crystals sandwiched therebetween. One of the first and second alignment films, comprises a first polyimide produced via polyamide acid ester containing cyclobutane as a precursor and a second polyimide produced via polyamide acid as a precursor. The polyamide acid has a higher polarity than that of the polyamide acid ester. The one of the first and second alignment films is responsive to photo-alignment. A first side of the one of the first and second alignment films is adjacent to the liquid crystals, and a second side thereof is closer to one of the TFT substrate and the counter substrate than the first side. The first side contains more of the first polyimide and less of the second polyimide than the second side.

A slim-bezel flexible display device and a manufacturing method thereof are disclosed. A through hole is formed in a first base plate of a lower substrate in an area adjacent to an edge thereof. A conductive connection body is mounted in the through hole. The conductive connection body is connected to a circuit layout layer and a flexible connection circuit that is connected to a drive circuit board so as to have the drive circuit board and the circuit layout layer connected. It is not necessary for the side of the lower substrate associated with the circuit layout layer to provide an additional connection zone for connection with the flexible connection circuit so that an effective display zone of a flexible display device can be enlarged and a bezel area can be reduced.

Presented here are manufacturing techniques to create an irregularly shaped electronic display, including a hollow within which a sensor, such as a camera, can be placed. The manufacturing techniques enable the creation of the hollow anytime during the manufacturing process. The resulting electronic display occupies the full side of the mobile device, with the sensors placed within and surrounded by the display.

Presented here are manufacturing techniques to create an irregularly shaped electronic display, including a hollow within which a sensor, such as a camera, can be placed. The manufacturing techniques enable the creation of the hollow anytime during the manufacturing process. The resulting electronic display occupies the full side of the mobile device, with the sensors placed within and surrounded by the display.

A thin film transistor array panel includes: a gate wiring layer disposed on a substrate; an oxide semiconductor layer disposed on the gate wiring layer; and a data wiring layer disposed on the oxide semiconductor layer, in which the data wiring layer includes a main wiring layer including copper and a capping layer disposed on the main wiring layer and including a copper alloy.

A display device is described that has reduced resistance in one or more of the gate, common, data electrical lines that control the operation of the pixels of the display device. Reduced resistance is achieved by forming additional metal and/or metal-alloy layers on the gate, common, and/or data lines in such a manner so that the cross-sectional area of those lines is increased. As a consequence, each such line is formed so as to be thicker than could otherwise be achieving without causing defects in the rubbing process of an alignment layer. Additionally, no widening of these lines is needed, thus preserving the aspect ratio of the device. The gate insulating and semiconducting layers that in part make up the thin film transistors that help control the operation of the pixels of the device may also be designed to take into account the increased thickness of the lines.

An opto-electronic apparatus and a manufacturing method thereof are disclosed. The manufacturing method of the opto-electronic apparatus includes the following steps of: disposing a matrix circuit on a substrate, wherein the matrix circuit has a matrix circuit thickness between the highest point of the matrix circuit and the surface of the substrate; disposing a plurality of first protrusions above the substrate, wherein at least one of the first protrusions has a first protrusion thickness between the highest point of the first protrusion and the surface of the substrate, and the first protrusion thickness is greater than the matrix circuit thickness; and performing a transfer step for transferring a plurality of first opto-electronic units from a first carrier to the first protrusions and bonding the first protrusions to at least two of the first opto-electronic units with an adhesive material.

A substrate including gate wirings including gate line and a gate electrode disposed on the substrate, a storage line disposed on the same layer as the gate wirings, a gate insulating layer disposed on the gate wirings and the storage line, an oxide semiconductor layer pattern disposed on the gate insulating layer, data wirings including a data line crossing the gate line, a source electrode disposed on one side of the oxide semiconductor layer pattern, and a drain electrode disposed on another side of the oxide semiconductor layer, and an etch stopper including a first etch stopper portion disposed between the storage line and the data line and partially overlapping both the data line and the storage line.

A display device includes a plurality of pixels arranged in a matrix. Each of the plurality of pixels includes a transistor and a pixel electrode arranged above the transistor through a first protective film and a second protective film. Among the plurality of pixels, the pixel electrodes of two pixels adjacent in a column direction are connected to corresponding source electrodes of the two pixels through second and third contact holes respectively. The second and third contact holes are formed in the first protective film within a first contact hole that is formed in the second protective film.