A solid-state imaging device includes a substrate and a photoelectric conversion region. The substrate has a charge accumulation region. The photoelectric conversion region is provided on the substrate. The photoelectric conversion region is configured to generate signal charges to be accumulated in the charge accumulation region. The photoelectric conversion region comprises a material that is not transparent.

Various embodiment include optical and optoelectronic devices and methods of making same. Under one aspect, an optical device includes an integrated circuit having an array of conductive regions, and an optically sensitive material over at least a portion of the integrated circuit and in electrical communication with at least one conductive region of the array of conductive regions. Under another aspect, a film includes a network of fused nanocrystals, the nanocrystals having a core and an outer surface, wherein the core of at least a portion of the fused nanocrystals is in direct physical contact and electrical communication with the core of at least one adjacent fused nanocrystal, and wherein the film has substantially no defect states in the regions where the cores of the nanocrystals are fused. Additional devices and methods are described.

A photodetector includes a metal layer that shields incident light and generates surface plasmon polaritons (SPPs), a light absorbing layer that absorbs the generated SPPs and allows charges excited by the absorbed SPPs and a localized electric field effect to tunnel, a dielectric formed at nanoholes in which at least a part of the metal layer is opened, and a semiconductor layer that induces the photocurrent based on an electric field effect of tunneled electrons. The SPPs form localized surface plasmons (LSPs) at an interface where the metal layer meets the dielectric.

A multilayer photoelectric converter includes a first photoelectric converter, and a second photoelectric converter. The first photoelectric converter and the second photoelectric converter are stacked in this order from a side of the multilayer photoelectric converter where light is incident. The first photoelectric converter has a sensitivity characteristic with a sensitivity having a peak at a wavelength 1a. The second photoelectric converter has a sensitivity characteristic with a sensitivity having a peak at a wavelength 2a. For the multilayer photoelectric converter, the relationship 1a<2a is satisfied. The sensitivity of the second photoelectric converter at the wavelength 2a is less than the sensitivity of the first photoelectric converter at the wavelength 1a.

A camera system including an optical system; and an imaging device that receives a light through the optical system. The imaging device includes a semiconductor substrate; pixels; and a signal line located along the pixels. Each pixel includes a photoelectric converter that generates signal charge by photoelectric conversion, a first transistor that outputs a signal to the signal line according to an amount of the signal charge, and a circuit that is coupled to a gate of the first transistor and that includes a capacitive element and a second transistor. The signal line is positioned in proximity to the semiconductor. The capacitive element is further away from the semiconductor substrate compared to the signal line. The gate of the first transistor is coupled to the capacitive element through the second transistor, and the gate of the first transistor is coupled to the photoelectric converter not through the second transistor.

The present disclosure relates to a solid-state image capturing element capable of suppressing a dark current, a manufacturing method thereof, and an electronic device. Provided is a solid-state image capturing element including: a photoelectric conversion unit formed outside a semiconductor substrate; and a charge retention section that is formed in the semiconductor substrate and retains charges generated in the photoelectric conversion unit. Among surfaces of the charge retention section, a bottom surface on a side opposite to a surface of a gate side of a transistor formed in the semiconductor substrate is covered by an insulation film. The present disclosure can be applied to, for example, solid-state image capturing elements and the like.

The present invention has an object of improving the operation stability of a semiconductor device that detects radiations without decreasing the yield thereof. A semiconductor device includes an active matrix substrate (50) including a plurality of TFTs (10) and a plurality of pixel electrode (20); a photoelectric conversion substrate (62) located to face the active matrix substrate (50); an upper electrode (64) provided on a surface of the photoelectric conversion substrate (62) opposite to the active matrix substrate (50); and a plurality of connection electrodes (72) provided between the active matrix substrate (50) and the photoelectric conversion substrate(62), the plurality of connection electrodes (72) being formed of metal material. Each of the plurality of connection electrodes (72) is in direct contact with any of the plurality of pixel electrodes (20) and with the photoelectric conversion substrate (62), overlaps a semiconductor layer (14) of any of the plurality of TFTs (10) as seen in a direction normal to the active matrix substrate (50), and contains a metal element having an atomic number of 42 or greater and 82 or smaller.

A solid-state imaging device includes: a semiconductor substrate; a pixel unit formed on the semiconductor substrate; and a peripheral circuit unit formed on the semiconductor substrate, at a periphery of the pixel unit, in which the pixel unit includes: a photoelectric conversion film which converts incident light into charges; and a floating diffusion which holds the charges, the peripheral circuit unit includes a transistor including a gate electrode and two source and drain diffusion regions, and the two source and drain diffusion regions have a higher impurity concentration than an impurity concentration of the floating diffusion.

A photoelectric conversion device includes a photoelectric conversion unit disposed above a substrate and a reading circuit. The photoelectric conversion unit includes a first electrode disposed above the substrate, a second electrode disposed above the first electrode, and a photoelectric conversion film disposed between the first electrode and the second electrode. The second electrode includes an opening, and is disposed in contact with the photoelectric conversion film at a boundary between adjacent photoelectric conversion units. An insulating film is disposed in contact with the second electrode.

A unit pixel formed on a substrate and configured to convert incident light to an electrical signal is provided. The unit pixel includes: a source having a source voltage supplied thereto and having a silicide layer for metal contact formed thereabove; a drain spaced apart from the source and having a silicide layer for metal contact formed thereabove; a channel formed between the source and the drain and having a current flowed therethrough; an insulating layer formed above the channel; and a floating gate having a nonsal structure in which no silicide layer is formed thereabove in order to facilitate an absorption of light, formed above the insulating layer so as to be placed between the source and the drain, and configured to control an amount of current flowing through the channel by an electric field generated by electron-hole pairs generated by the incident light. A body of the unit pixel is floated, and the electric field is configured to act on the channel by electrons aggregated toward the source and holes aggregated toward the drain by the source voltage supplied to the source.