A bonded substrate includes a metal plate; a first ceramic; and a first metal body disposed between a first surface of the metal plate and a first surface of the first ceramic and disposed on 80% or more of a lateral surface continuous with the first surface of the first ceramic.

An optoelectronic semiconductor component and a method for making an optoelectronic semiconductor component are disclosed. In an embodiment the component includes a carrier including at least one conversion-medium body and a potting body, the potting body surrounding the conversion-medium body at least in places, as seen in plan view, electrical contact structures fitted at least indirectly to the carrier and a plurality of optoelectronic semiconductor chips fitted to a main face of the carrier, the optoelectronic semiconductor chips configured to generate radiation, wherein the conversion-medium body is shaped as a plate, wherein the semiconductor chips are directly mechanically connected to the conversion-medium body, and wherein the conversion-medium body is free of cutouts for the electrical contact structures and is not penetrated by the electrical contact structure.

A substrate for mounting electrically-powered light radiation sources, e.g. LED sources, includes a base layer of electrically-insulating material, such as PET, and a contact layer of electrically conductive material, e.g. copper. The contact layer includes a mounting area for a light radiation source having opposed anode and cathode terminals, including two portions with a gap therebetween. Therefore, the light radiation source may be mounted bridge-like across gap, with anode and cathode terminals soldered to respective soldering surfaces provided in the one and the other of said two portions of the mounting area. The latter portions include respective solder flow blocking formations including fork-shaped apertures in contact layer leaving base layer uncovered. The fork-shaped apertures have a web portion and prongs extending from web portion towards said soldering surfaces.

A wavelength conversion bonding member includes a phosphor ceramic element and a bonding layer provided on one side of the phosphor ceramic element, wherein the bonding layer has a thermal conductivity of more than 0.20 W/m.Math.K, and the bonding layer has a reflectivity of 90% or more.

(Problem to be Solved) To provide a wavelength converting device which can efficiently exhaust heat from the wavelength converting member using a heat dissipating member. (Solution) The wavelength converting device includes a heat dissipating member, a wavelength converting member disposed on the heat dissipating member, and a connecting member which connects the heat dissipating member and the wavelength converting member. Particularly, the wavelength converting member includes an upper surface, side surfaces, and a lower surface, and the connecting member is thermally connected to the side surfaces and the lower surface of the wavelength converting member.

Solid-state transducers (SSTs) and vertical high voltage SSTs having buried contacts are disclosed herein. An SST die in accordance with a particular embodiment can include a transducer structure having a first semiconductor material at a first side of the transducer structure, and a second semiconductor material at a second side of the transducer structure. The SST can further include a plurality of first contacts at the first side and electrically coupled to the first semiconductor material, and a plurality of second contacts extending from the first side to the second semiconductor material and electrically coupled to the second semiconductor material. An interconnect can be formed between at least one first contact and one second contact. The interconnects can be covered with a plurality of package materials.

A wavelength conversion member includes: a heat conducting layer; a sapphire substrate having a third surface directly contact with a second surface of the heat conducting layer and the fourth surface opposite to the third surface; and a phosphor layer having a fifth surface directly contact with the fourth surface and a sixth surface opposite to the fifth surface, the phosphor layer including phosphor. At least one of an area of a first surface and an area of the second surface of the heat conducting layer is at least 2800 times as large as an area of the sixth surface of the phosphor layer. At least one of an area of the third surface and an area of the fourth surface of the sapphire substrate is at least two times as large as the area of the sixth surface of the phosphor layer.

The present disclosure relates to a method for manufacturing a LED package structure. First, a support plate including a top surface is provided. An annular groove is defined on the top surface and a protruding portion on the support plate is surrounded by the annular groove. Second, a reflecting layer is formed on surfaces and periphery portions of the annular groove. Then, a wiring pattern is formed on the top surface corresponding to the protruding portion. An insulting layer is formed in spaces of the wiring pattern and the annular groove. The support plate is removed and a receiving groove is formed by the insulting layer and the corresponding protruding portion. Finally, a LED chip is received in the receiving groove and bonded on the wiring pattern to obtain a LED package structure. A LED package structure made by the above method is also provided.

An optical device substrate includes metal plates and insulating layers formed between the metal plates. Each insulating layer includes a cured insulating layer formed by curing insulating material and an anodized layer merged with each metal plate, the anodized layer formed by anodizing a first metal and a second metal of each metal plate. The first metal and the second metal include a first anodized layer and a second anodized layer, respectively, and are electrically insulated by interfaces including a first interface formed between the first metal and the first anodized layer, a second interface formed between the first anodized layer and the cured insulating layer, a third interface formed between the cured insulating layer and the second metal and a fourth interface formed between the second anodized layer and the second metal.

The present invention discloses an embedded white light LED package structure based on a solid-state fluorescence material. In the present invention, the high power blue light chip is directly embedded into and bonded with a groove of the solid-state fluorescence material, and blue light emitted by the chip and yellow and green light obtained by conversion and emitted by the solid-state fluorescence material are blended by using the principle of lenses, to obtain white light. The embedded white light LED package structure based on a solid-state fluorescence material has a simple process, low cost, and high fluorescence efficiency; and blue light does not leak. Heat dissipation can be directly performed by using the solid-state fluorescence material, and heat dissipation performance is desirable. Energy conservation and environmental protection is achieved, and a service life of an LED lighting device is greatly improved.