The invention relates to an optoelectronic semiconductor device comprising a carrier, an optoelectronic semiconductor chip arranged on the carrier and a plurality of columns, wherein the plurality of columns are arranged on a base surface of the carrier opposite to the optoelectronic semiconductor chip, and wherein the plurality of columns cause a thermal heat conduction away from the optoelectronic semiconductor chip and the carrier. The invention further relates to a method for producing an optoelectronic semiconductor device.

A light emitting device includes a resin package including a first lead, a second lead, a resin portion holding the first lead and the second lead, at least one light emitting element mounted on the resin package, and a covering member covering at least a portion of an upper surface of each of the first lead, the second lead, and the resin portion. The resin portion includes at least one resin recess between the first lead and the second lead. At least a portion of the resin recess is located between a first portion of the first lead and a second portion of the second lead in a first direction, and is located between a first extended portion of the first lead and a second extended portion of the second lead in a second direction, and at least a portion of the resin recess is covered by the covering member.

Provided is a display panel including a first substrate, a light-emitting unit on the first substrate, and a light-converting unit. The light-converting unit converts a first light having a first peak wavelength emitted by the light-emitting unit into a second light having a second peak wavelength. The first peak wavelength is smaller than the second peak wavelength. The light-converting unit includes light conversion particles and first heat dissipation particles. The thermal conductivity of the first heat dissipation particles is greater than 50 W.Math.m.sup.1.Math.K.sup.1. Provided is another display panel provided including a first substrate, a light-emitting unit on the first substrate, a pixel define layer on the first substrate, and a separation layer. The pixel define layer includes an opening to accommodate the light-emitting unit. An adhesive layer is on the first substrate. At least one of the pixel define layer and the adhesive layer includes the heat dissipation particles.

A light emitting display device can include a heat dissipater having a first heat dissipating particle and extending from an outside of a first electrode constituting a light emitting diode disposed in an emission area. Further, optionally, the display device can further include a bank layer disposed in a non-display area and having a light absorbing material and a second heat dissipating particle. Each of the heat dissipater and the bank layer can include the heat dissipating particle so that heat generated in the light emitting diode can be dissipated outwardly. In addition, as the amount of the light absorbing material contents in the bank layer decrease, the credibility of the light emitting display device can be improved.

A device emitting mid-infrared light that comprises a semiconductor substrate of GaSb or closely related material. The device can also comprise epitaxial heterostructures of InAs, GaAs, AISb, and related alloys forming light emitting structures cascaded by tunnel junctions. Further, the device can comprise light emission from the front, epitaxial side of the substrate.

A mounting substrate includes a ceramic substrate having two or more through holes, metal members disposed in respective through holes, and a bonding material disposed between the ceramic substrate and each of the metal members in the through holes. A portion of an upper surface, a portion of a lower surface, and a portion of lateral surfaces of each of the metal members are exposed through the ceramic substrate. The portion of the lateral surfaces and the portion of the lower surface of each of the metal members, exposed through the ceramic substrate, are continuous with each other. The portion of the lateral surfaces of each of the metal members, exposed through the ceramic substrate, is coplanar with a lateral surface of the ceramic substrate. The ceramic substrate is disposed so as to surround an outer periphery of each of the metal members in a top view.

Provided is a light-emitting device that makes it possible to emit, with high efficiency, light having higher uniformity. The light-emitting device includes a light source, a wavelength conversion unit, and a wall member. The light source is disposed on a substrate. The wavelength conversion unit includes a wavelength conversion member and a transparent member that contains the wavelength conversion member therein. The wavelength conversion member is disposed to face the light source in a thickness direction and converts first wavelength light from the light source to second wavelength light. The wall member is provided on a substrate and surrounds the light source in a plane that is orthogonal to the thickness direction. A region occupied by the wavelength conversion member is wider than a region surrounded by the wall member, and entirely overlaps with the region surrounded by the wall member in the thickness direction.

An embodiment provides a semiconductor device package, the semiconductor device package comprising: a substrate including an electrode disposed on one surface; a metal sidewall disposed on the substrate while surrounding the electrode; a semiconductor device disposed on the electrode; and a light transmitting member disposed on the metal sidewall to cover the semiconductor device, wherein the metal sidewall has the inner surface and the outer surface which are corrugated, and includes: a first metal part disposed on the substrate; a second metal part disposed on the first metal part; and a third metal part disposed on the second metal part, and the inner surface or the outer surface of the metal sidewall includes a recess portion between the second metal part and the third metal part.

Provided is a light-emitting device that makes it possible to emit, with high efficiency, light having higher uniformity. The light-emitting device includes a light source, a wavelength conversion unit, and a wall member. The light source is disposed on a substrate. The wavelength conversion unit includes a wavelength conversion member and a transparent member that contains the wavelength conversion member therein. The wavelength conversion member is disposed to face the light source in a thickness direction and converts first wavelength light from the light source to second wavelength light. The wall member is provided on a substrate and surrounds the light source in a plane that is orthogonal to the thickness direction. A region occupied by the wavelength conversion member is wider than a region surrounded by the wall member, and entirely overlaps with the region surrounded by the wall member in the thickness direction.

A light emitting device includes a first substrate, a light-emitting unit, a pixel define layer, an adhesive layer and a plurality of scattering particles. The light-emitting unit is disposed on the first substrate. The pixel define layer is disposed on the first substrate and includes an opening. At least one portion of the light-emitting unit is disposed in the opening. The plurality of scattering particles are disposed on the first substrate. At least one portion of the plurality of scattering particles are overlapped with the at least one portion of the light-emitting unit.