Embodiments related to the manufacturing of an imager device and an imager device are disclosed. Embodiments associated with methods of an imager device are also disclosed.

Embodiments related to a method of manufacturing of an imager and an imager device are shown and depicted.

Embodiments of a hybrid imaging sensor that optimizes a pixel array area on a substrate using a stacking scheme for placement of related circuitry with minimal vertical interconnects between stacked substrates and associated features are disclosed. Embodiments of maximized pixel array size/die size (area optimization) are disclosed, and an optimized imaging sensor providing improved image quality, improved functionality, and improved form factors for specific applications common to the industry of digital imaging are also disclosed.

A radiographic imaging control device is provided with a radiation detector, amplifiers and a controller. A plurality of pixels are arrayed in the radiation detector, each pixel including a sensor portion that generates charges in accordance with irradiated radiation and a switching element that is for reading out the charges generated at the sensor portion. Each amplifier is provided in correspondence with a respective pixel of the radiation detector, is equipped with a resetter that resets charges remaining at an integration capacitor, and amplifies an electronic signal according to the charges read out by the switching element from the corresponding pixel by a pre-specified amplification factor. In accordance with pre-specified conditions, the controller controls so as to alter a bias current supplied to the amplifiers in at least some periods of resetting by the resetter.

An image sensor with a pinned photodiode includes a photodiode formed in a substrate by implanting dopants of a first type through one or more dielectric layers formed over the substrate. A pinning layer for the photodiode may be formed by implanting dopants of a second type through the same one or more dielectric layers. The pinning layer may be formed over a photodiode region of the substrate. The concentration of dopants of the second type may have a maximum value in dielectric layers over the photodiode that exceeds the concentration of dopants of the second type in the substrate below. The photodiode and pinning layer may both be formed by implanting ions of the first and second type respectively through a dielectric layer formed after etching away a portion of another dielectric layer, having a different thickness, and having different optical transmission properties than the another dielectric layer.

There is provided a solid-state image pickup device that includes a functional region provided with an organic film, and a guard ring surrounding the functional region

Systems, devices, and methods are described for providing, among other things, an intra-oral x-ray imaging system configured to reduce patient exposure to x-rays, reduce amount of scatter, transmission, or re-radiation during imaging, or improve x-ray image quality. In an embodiment, an intra-oral x-ray imaging system includes an intra-oral x-ray sensor configured to communicate intra-oral x-ray sensor position information or intra-oral x-ray sensor orientation information to a remote x-ray source.

Embodiments of a hybrid imaging sensor and methods for pixel sub-column data read from the within a pixel array.

To stabilize a manufacturing yield by suppressing occurrence of scratches and stains on a transparent member provided so as to cover a semiconductor element from a front surface side in a semiconductor device. A semiconductor device includes a substrate, a semiconductor element that is provided on the substrate, a transparent member that is provided on the semiconductor element through a support part, and a sealing resin part that is formed around the semiconductor element and the transparent member on the substrate, and the sealing resin part has a protrusion part having an upper surface thereof perpendicular to the plate thickness direction of the substrate, the upper surface being positioned above a front surface of the transparent member in the plate thickness direction.

A charge-coupled device (CCD) image sensor is provided. The CCD image sensor may include an array of photosensors that transfer charge to multiple vertical CCD shift registers, which then in turn transfer the charge to a horizontal CCD shift register. The horizontal CCD shift register then feeds an output buffer circuit. The output buffer circuit can include multiple output stages, each of which can include a source-follower transistor coupled in series with a current sink transistor and at least one cascode transistor. The current sink transistor may have its gate terminal shorted to ground. In one arrangement, the cascode transistor has a gate terminal that receives a non-zero bias voltage. In another arrangement, the cascode transistor has a gate terminal that is also shorted to ground and operates in depletion mode.