A photon detector device and method are disclosed. The device includes a substrate with an isolation structure, guard ring, sensor node, and common node on the front side, an isolation extension structure extending from the back side to the front side, and a multilayer reflector on the front side. The method includes doping the substrate, forming the various structures, and using the device to detect a photon of extreme ultraviolet wavelength by generating an avalanche current in response to the photon.

A boron layer may be formed as a passivation layer in a recess in which a deep trench isolation structure (DTI) structure is to be formed. The boron layer results in formation of a boron-silicon interface between the DTI structure and a photodiode of a pixel sensor included in a pixel array. The boron-silicon interface functions as a diode junction, which resists penetration of photons into the DTI structure. This reduces and/or minimizes photon transmission through the DTI structure, which reduces and/or minimizes optical crosstalk between pixel sensors of the pixel array.

A method includes forming a package, which includes an optical die and a protection layer attached to the optical die. The optical die includes a micro lens, with the protection layer and the micro lens being on a same side of the optical die. The method further includes encapsulating the package in an encapsulant, planarizing the encapsulant to reveal the protection layer, and removing the protection layer to form a recess in the encapsulant. The optical die is underlying the recess, with the micro lens facing the recess.

A semiconductor optical device for a LIDAR sensor system for a vehicle includes a first portion and a second portion bonded to the first portion. The first portion includes a first microlens structure configured to receive a first beam. The first portion also includes a first notch structure coupled to the first microlens structure, the first notch structure configured to receive the first beam and direct the first beam into an environment of the vehicle. The second portion includes a second notch structure surface configured to receive a second beam from the environment of the vehicle. The second portion also includes a second microlens structure coupled to the second notch structure, the second microlens structure configured to receive the second beam reflected by the second notch surface and direct the second beam to a receiver.

A semiconductor optical device for a LIDAR sensor system for a vehicle includes a first portion and a second portion bonded to the first portion. The first portion includes a first microlens structure configured to receive a first beam. The first portion also includes a first notch structure coupled to the first microlens structure, the first notch structure configured to receive the first beam and direct the first beam into an environment of the vehicle. The second portion includes a second notch structure surface configured to receive a second beam from the environment of the vehicle. The second portion also includes a second microlens structure coupled to the second notch structure, the second microlens structure configured to receive the second beam reflected by the second notch surface and direct the second beam to a receiver.

A semiconductor optical device for a LIDAR sensor system for a vehicle includes a first portion and a second portion bonded to the first portion. The first portion includes a first microlens structure configured to receive a first beam. The first portion also includes a first notch structure coupled to the first microlens structure, the first notch structure configured to receive the first beam and direct the first beam into an environment of the vehicle. The second portion includes a second notch structure surface configured to receive a second beam from the environment of the vehicle. The second portion also includes a second microlens structure coupled to the second notch structure, the second microlens structure configured to receive the second beam reflected by the second notch surface and direct the second beam to a receiver.

A fingerprint sensor has an array of microlenses formed on an upper surface of a transparent substrate; with a lower surface of the transparent substrate bonded to an upper surface of a fingerprint image sensor integrated circuit. In embodiments, it includes one or two filter layers on the lower surface of the transparent substrate, and may also include masked black baffle layers on one or more of the upper and lower surface of the transparent substrate. The sensor is made by forming the microlenses and black baffle layers on the transparent substrate, then aligning the transparent substrate to a wafer of fingerprint sensor integrated circuits and bonding the transparent substrate to the wafer, then dicing the wafer into individual fingerprint sensors.

A photo-sensing device includes a substrate and a trench isolation. The substrate has a pixel region. The trench isolation is disposed within the substrate, defines the pixel region and incudes an etching stop layer and an isolation structure. The isolation layer is connected with the etching stop layer. The etching stop layer has a minimum width in a direction, the isolation portion has a maximum width in the direction, and the minimum width and the maximum width are different.

To improve a manufacturing yield. A semiconductor device includes: a base member having a first bonding surface; and a semiconductor chip having a second bonding surface having a quadrangular shape, and the second bonding surface of the semiconductor chip and the first bonding surface of the base member are bonded by direct bonding. Then, the semiconductor chip includes a multilayer wiring layer including the second bonding surface, and a semiconductor layer provided on an opposite side to a side of the second bonding surface of the multilayer wiring layer. Then, the multilayer wiring layer includes a warp suppression film that extends along at least one side of the second bonding surface and suppresses warp of the semiconductor chip.

A method of manufacturing a semiconductor structure includes forming a recess in a semiconductor substrate; disposing a dielectric material into the recess to form a trench isolation; and forming a first pixel in the semiconductor substrate proximate to the trench isolation. The method further includes forming a second pixel in the semiconductor substrate over the first pixel; forming a first gate structure over the semiconductor substrate and laterally between the first pixel and the trench isolation from a top view perspective; and forming a second gate structure over the second pixel and adjacent to the first gate structure.