A method of removing fixed pattern noise, comprising: S01: performing a single-frame segmented exposure on a pixel array; S02: reading a signal of the pixel array, comprising: S021: performing a soft reset, so as to set the reset signal of the pixel unit to an intermediate voltage, and reading a differential reset signal; S022: performing a hard reset so as to set the reset signal of the pixel unit to a high voltage; S023: turning on a transmission MOS transistor to enable an exposure signal of the photodiode to be transmitted to the floating diffusion area, and reading a differential pixel transmission signal; S03: subtracting the differential reset signal from the differential pixel transmission signal to obtain an exposure signal with fixed pattern noise removed. Another method of removing fixed pattern noise and an image sensor are further provided.

An imaging device having a pixel including: a photoelectric converter that generates an electric signal through photoelectric conversion of incident light; a first transistor that has a gate coupled to the photoelectric converter and that amplifies the electric signal; and a second transistor that has a gate coupled to the photoelectric converter, one of a source and a drain of the second transistor being coupled to the photoelectric converter. The imaging device further includes a voltage supply circuit configured to supply two or more different voltages to the other of the source and the drain of the second transistor.

An image capturing apparatus comprises a unit pixel including a plurality of light receiving elements, a plurality of column output lines provided, for each column, at a number greater than or equal to at least a number of the light receiving elements of each unit pixel, and a switching unit configured to switch between a first readout mode for reading out signals from the plurality of light receiving elements via respectively different column output lines and a second readout mode for reading out signals from the plurality of light receiving elements via the same column output line for each unit pixel.

An image sensor pixel may include a photodiode, a charge storage region, a floating diffusion node, and a capacitor. A first transistor may be coupled between the photodiode and the charge storage region. A second transistor may be coupled between the charge storage region and the capacitor. The photodiode may generate image signals corresponding to incident light. Multiple image signals may be summed at the charge storage region. The second transistor may determine a portion of the image signal that may be sent to the capacitor for storage. The portion of the image signal that is sent to the capacitor may be a low gain signal. A remaining portion of the image signal may be a high gain signal. The image sensor pixel may also include readout circuitry that is configured to readout low and high gain signals stored at the floating diffusion node in a double-sampling readout operation.

A solid-state imaging device includes a first chip including a plurality of pixels, each pixel including a light sensing unit generating a signal charge responsive to an amount of received light, and a plurality of MOS transistors reading the signal charge generated by the light sensing unit and outputting the read signal charge as a pixel signal, a second chip including a plurality of pixel drive circuits supplying desired drive pulses to pixels, the second chip being laminated beneath the first chip in a manner such that the pixel drive circuits are arranged beneath the pixels formed in the first chip to drive the pixels, and a connection unit for electrically connecting the pixels to the pixel drive circuits arranged beneath the pixels.

A novel semiconductor device, a semiconductor device where influence of noise is lessened, or a semiconductor device with high reliability is provided. A first circuit has a function of generating an optical data signal in accordance with the amount of irradiation light and a function of generating a reset signal corresponding to a reset state of the first circuit. A second circuit has a function of controlling output of the optical data signal and the reset signal from the first circuit to a fourth circuit. A third circuit has a function of controlling generation of the reset signal to be output from the first circuit to the fourth circuit. The fourth circuit has a function of calculating the difference between the optical data signal input from the first circuit and the reset signal input from the first circuit after input of the optical data signal.

An imaging device includes. a first terminal to which a first voltage is applied; a second terminal to which a second voltage different from the first voltage is applied; a voltage generator generating a ramp voltage which is a voltage varying with time; a first switching circuit connected to the second terminal and the voltage generator; a second switching circuit connected to the first terminal and the first switching circuit, and pixels each including a photoelectric converter generating a signal, and a signal detection circuit detecting the signal, at least one of the pixels connected to the second switching circuit. The first switching circuit selectively connects one of the second terminal and the voltage generator with the second switching circuit. The second switching circuit selectively connects one of the first voltage terminal and the first switching circuit with the at least one of the pixels.

An optical electronic device may include a plurality of different optical sources, and a global shutter sensor including an array of global shutter pixels, with each global shutter pixel including a plurality of storage elements. A controller may be coupled to the plurality of optical sources and the global shutter sensor and configured to cause a first optical source to illuminate and a first storage element in each global shutter pixel to store optical data during a first integration period, cause a second optical source to illuminate and a second storage element in each global shutter pixel to store optical data during a second integration period, and output the stored optical data from the first and second storage elements of the global shutter pixels after the first and second integration periods.

The present technology relates to a solid-state imaging device, a method of driving the solid-state imaging device, and an electronic apparatus by which pixels can be read effectively. The solid-state imaging device includes a readout unit that performs a common-source operation or a source follower operation with respect to pixels to read a signal for each column. According to a level of illumination, the readout unit performs a common-source readout operation to reset a floating diffusion region and read an electric charge transferred from a photoelectric transducer and held in the floating diffusion region, and performs a source follower readout operation to reset the floating diffusion region and read the electric charge transferred from the photoelectric transducer and held in the floating diffusion region. The present technology is applicable to a solid-state imaging device such as a CMOS image sensor.

An analog-digital converting device includes a comparison block generating at least one first comparison signal by comparing pixel signals with each other, and for generating second comparison signals by comparing each of the plurality of pixel signals with a ramp signal through a single ramping operation; a feedback control unit determining a data conversion sequence according to the at least one first comparison signal received from the comparison block, and outputting a control signal according to the determined data conversion sequence; a selection block selecting two of the plurality of the pixel signals or at least one of the plurality of the pixel signals and the ramp signal to be applied to the comparison block according to the control signal received from the feedback control unit; and a data conversion unit performing a data conversion on the plurality of pixel signals based on the second comparison signal.