A semiconductor device includes an SiC chip that has a first principal surface and a second principal surface, an element structure that is formed in the first principal surface, and an electrode that is formed on the second principal surface and is electrically connected to the element structure and an arithmetic mean roughness (Ra) of the second principal surface is not less than 30 nm. An ohmic contact of low resistance can thereby be formed at the second principal surface at the opposite side to the element structure.

A semiconductor device includes an SiC chip that has a first principal surface and a second principal surface, an element structure that is formed in the first principal surface, and an electrode that is formed on the second principal surface and is electrically connected to the element structure and an arithmetic mean roughness (Ra) of the second principal surface is not less than 30 nm. An ohmic contact of low resistance can thereby be formed at the second principal surface at the opposite side to the element structure.

In some implementations, one or more semiconductor processing tools may deposit cobalt material within a cavity of the semiconductor device. The one or more semiconductor processing tools may polish an upper surface of the cobalt material. The one or more semiconductor processing tools may perform a hydrogen soak on the semiconductor device. The one or more semiconductor processing tools may deposit tungsten material onto the upper surface of the cobalt material.

In some implementations, one or more semiconductor processing tools may deposit cobalt material within a cavity of the semiconductor device. The one or more semiconductor processing tools may polish an upper surface of the cobalt material. The one or more semiconductor processing tools may perform a hydrogen soak on the semiconductor device. The one or more semiconductor processing tools may deposit tungsten material onto the upper surface of the cobalt material.

A semiconductor structure, including a substrate, a first nitride layer, a polarity inversion layer, a second nitride layer, and a third nitride layer, is provided. The first nitride layer is located on the substrate. The polarity inversion layer is located on a surface of the first nitride layer to convert a non-metallic polarity surface of the first nitride layer into a metallic polarity surface. The second nitride layer is located on the polarity inversion layer. The third nitride layer is located on the second nitride layer. The substrate, the first nitride layer, the polarity inversion layer, and the second nitride layer include iron element.

A semiconductor structure, including a substrate, a first nitride layer, a polarity inversion layer, a second nitride layer, and a third nitride layer, is provided. The first nitride layer is located on the substrate. The polarity inversion layer is located on a surface of the first nitride layer to convert a non-metallic polarity surface of the first nitride layer into a metallic polarity surface. The second nitride layer is located on the polarity inversion layer. The third nitride layer is located on the second nitride layer. The substrate, the first nitride layer, the polarity inversion layer, and the second nitride layer include iron element.

An SiC semiconductor device includes an SiC semiconductor layer including an SiC monocrystal and having a first main surface as an element forming surface, a second main surface at a side opposite to the first main surface, and a plurality of side surfaces connecting the first main surface and the second main surface, and a plurality of modified lines formed one layer each at the respective side surfaces of the SiC semiconductor layer and each extending in a band shape along a tangential direction to the first main surface of the SiC semiconductor layer and modified to be of a property differing from the SiC monocrystal.

A method of fabricating a semiconductor device includes: epitaxially growing a multilayer Group-III nitride structure on a first surface of a substrate; removing portions of the multilayer structure to form a mesa arranged on the first surface; applying insulating material to the first surface of the substrate so that side faces of the mesa are embedded in the insulating material; forming an electrode on a top surface of the mesa; forming a via in the insulating material that extends from the top surface of the insulating material to the first surface of the substrate; inserting conductive material into the via to form a conductive via; applying an electrically conductive redistribution structure to the upper surface and electrically connecting the conductive via to the electrode; and successively removing portions of a second surface of the substrate, to expose the insulating material and form a worked second surface including the insulating material.

A semiconductor device includes a semiconductor substrate including a first side, a second side, a sidewall connected to the first and second sides, and at least one protrusion protruded from the second side, devices disposed at the first side of the semiconductor substrate, and an interconnect structure disposed over the first side of the semiconductor substrate and electrically coupled to the devices. The protrusion and the semiconductor substrate are made of a same material

An organic light emitting display apparatus is disclosed that comprises a substrate including a first portion and a second portion; a first thin film transistor having a first polycrystalline semiconductor pattern, the first thin film transistor on the first portion of the substrate; a second thin film transistor having a first oxide semiconductor pattern, the second thin film transistor on the second portion of the substrate; and an organic light emitting device configured to emit light, the organic light emitting device connected to the second thin film transistor; wherein the first polycrystalline semiconductor pattern includes a surface that is planarized and the first oxide semiconductor pattern includes a surface that includes a plurality of protrusions.