A photovoltaic device (10) is provided that comprises serially arranged photovoltaic device cells (10A, 10B). Each cell having a transparent electrode layer region electrical conductors (121A, . . . , 124A) forming an electric contact with the transparent electrode layer region, a photo-voltaic stack portion (14A, 14B) that extends over the transparent electrode region (11A, 11B) and over an insulated portion of the electrical conductors, a further electrode region (15A, 5B) that extends over the photovoltaic stack portion (14A,14B). A further electrode region (15A) of a photovoltaic device cell (10A) extends over electric contacts formed by exposed ends (12B1) of the electrical conductors of a subsequent photovoltaic device cell (10B).

The present specification relates to a photoactive layer including: an electron donor; and an electron acceptor, in which the electron donor includes: a single molecular material; and a polymer material, and the single molecular material is represented by Formula 1, and an organic solar cell including the same.

A photoelectric conversion element including: a first electrode; a hole blocking layer; a photoelectric conversion layer; a second electrode; a third electrode; a photoelectric conversion part in which the first electrode, the hole blocking layer, the photoelectric conversion layer, and the second electrode are stacked; an electrode contact part in which the second electrode is in contact with the third electrode; and a division part dividing the photoelectric conversion part and the electrode contact part, wherein an area (S1) where the second electrode is in contact with the third electrode in the electrode contact part and an area (S2) of the photoelectric conversion part satisfy expression (1) below: 1.0×10.sup.−5≤100×(S1/S2) . . . expression (1).

A formulation for preparing organic electronic devices, has: a p-type organic semiconductor polymer including a conjugated aryl compound, a conjugated heteroaryl compound, or a mixture of at least two of these compounds; an n-type semiconductor material having fullerene, substituted fullerene, or a mixture of at least two of these compounds; and a non-aqueous solvent. The concentration of the p-type organic semiconductor polymer is in the range from 12 mg/mL to 17 mg/mL per milliliter of solvent and the concentration of the p-type organic semiconductor material is in the range from 24 mg/mL to 28 mg/mL per milliliter of solvent.

A formulation for preparing organic electronic devices, has: a p-type organic semiconductor polymer including a conjugated aryl polymer, a conjugated heteroaryl compound, or a mixture of at least two of these compounds; an n-type semiconductor material including fullerene, substituted fullerene, or a mixture of at least two of these compounds; and a non-aqueous solvent. The concentration of the p-type organic semiconductor polymer is in the range from 4 mg/mL to 8 mg/mL per milliliter of solvent and the concentration of the p-type organic semiconductor material is in the range from 10 mg/mL to 14 mg/mL per milliliter of solvent.

Example embodiments generally relate to a detector for electromagnetic radiation such as a detector comprising a first, pixelated electrode layer comprising a plurality of electrode pixels, a first layer comprising a plurality of tiles comprising a material configured to absorb and convert the electromagnetic radiation, and a second electrode layer, as well as a method of producing a detector for electromagnetic radiation, comprising providing a first, pixelated electrode layer comprising a plurality of electrode pixels, applying a plurality of tiles comprising a material configured to absorb and convert the electromagnetic radiation on the first, pixelated electrode layer, and applying a second electrode layer on the first layer.

There is provided a multi junction photovoltaic device comprising a first sub-cell comprising a photoactive region comprising a layer of perovskite material, a second sub-cell comprising a photoactive silicon absorber. and an intermediate region disposed between and connecting the first sub-cell and the second sub-cell. The intermediate region comprises an interconnect layer, the interconnect layer comprising a two-phase material comprising elongate (i.e. filament like) silicon nanocrystals embedded in a silicon oxide matrix.

A photoelectric conversion device includes a first electrode and a second electrode facing each other, an organic photoelectric conversion layer between the first electrode and the second electrode, and a charge auxiliary layer between the first electrode and the organic photoelectric conversion layer. The organic photoelectric conversion layer is configured to absorb light in at least a portion of a wavelength spectrum of incident light and to convert the absorbed light into an electrical signal. The charge auxiliary layer includes a metal and an oxide. The oxide may be an oxide material that excludes silicon oxide such that the charge auxiliary layer does not include silicon oxide.

A solar cell system and a flexible solar panel are disclosed herein. The solar cell system includes a glass housing, a set of rows of solar cells each defining a front side and a rear side and arranged within the glass housing. The solar cell system can also include a reflective element disposed in the glass housing and facing the rear side of the set of rows of solar cells and a first terminal coupled to a first end of the set of rows of solar cells, traversing through and sealed against the first end of the glass housing. The solar cell system can be configured with other solar cell systems into the flexible solar panel that is deployable in a wide range of potential applications.

A monolithic solar cell includes a first solar cell that is a sequential stack of an electrode, a silicon substrate, and an n-type emitter layer; a recombination layer disposed on the n-type emitter layer; an interfacial layer that is a double layer constituted of PEDOT:PSS and poly-TPD or PEDOT:PSS and PCDTBT, and that is disposed on the recombination layer; and a second solar cell that includes a p-type hole selective layer and a perovskite layer disposed on the p-type hole selective layer, the a p-type hole selective layer contacting and being integrated onto the interfacial layer of the first solar cell in a heat treatment during which the interfacial layer is partially decomposed, wherein the presence of the interfacial layer prevents a reduction in photoelectric conversion efficiency that occurs if the first solar cell and the second solar cell are combined without the presence of the interfacial layer.