A tandem photovoltaic device includes a silicon photovoltaic cell having a silicon layer, a perovskite photovoltaic cell having a perovskite layer, and an intermediate layer between a rear side of the perovskite photovoltaic cell and a front (sunward) side of the silicon photovoltaic cell. The front side of the silicon layer has a textured surface, with a peak-to-valley height of structures in the textured surface of less than 1 μm or less than 2 μm. The textured surface is planarized by the intermediate layer or a layer of the perovskite photovoltaic cell. Forming the tandem photovoltaic device includes texturing a silicon containing layer of a silicon photovoltaic cell and operatively coupling a perovskite photovoltaic cell comprising a perovskite layer to the silicon photovoltaic cell, thereby forming a tandem photovoltaic device and planarizing the textured surface of the silicon containing layer of the silicon photovoltaic cell.

A light-emitting device includes: a first electrode; a second electrode facing the first electrode; and an interlayer between the first electrode and the second electrode and including an emission layer, wherein the interlayer includes a heterocyclic compound of Formula 1:

A.sub.1B.sub.1].sub.n1  Formula 1

wherein, in Formula 1, the variables are defined herein.

A composition, which may be in the form of a film, comprises a network of carbon nanotubes. One or more non-conjugated polymer molecules are associated with individual carbon nanotubes or small bundles of carbon nanotubes in the form of polymer-nanotube complexes.

A solid junction-type photoelectric conversion element (10) including a first conductive layer (2), an electric power generation layer (4), and a second conductive layer (6), which are laminated in this order, wherein the electric power generation layer (4) comprises: a perovskite compound represented by a composition formula ABX.sub.3, formed of an organic cation A, a metal cation B and a halide anion X, and a compound Z having no perovskite structure.

The present application relates to copper-doped double perovskites, for example, copper-doped double perovskites of the formula (I) and to uses thereof, for example as low-bandgap materials such as a semiconducting material in a device. The present application also relates to methods of tuning the bandgap of a Cs.sub.2SbAgZ.sub.6 double perovskite (for example, wherein Z is Cl) comprising doping the double perovskite with copper.
Cs.sub.2Sb.sub.1-aAg.sub.1-bCu.sub.2xZ.sub.6  (I)

The present disclosure relates to a solar battery. The solar battery comprises a semiconductor structure, a back electrode, and an upper electrode. The semiconductor structure defines a first surface and a second surface. The semiconductor structure comprises an N-type semiconductor layer and a P-type semiconductor layer. The back electrode is located on the first surface. The upper electrode is located on the second surface. The back electrode comprises a first carbon nanotube, the upper electrode comprises a second carbon nanotube, and the first carbon nanotube intersects with the second carbon nanotube. A multilayer structure is formed by an overlapping region of the first carbon nanotube, the semiconductor structure and the second carbon nanotube.

A compound of Chemical Formula 1, and an organic photoelectric device, an image sensor, and an electronic device including the same are disclosed: ##STR00001## In Chemical Formula 1, each substituent is the same as described in the detailed description.

Provided are an inverted thick 2D hybrid perovskite solar cell insensitive to film thickness and a preparation method thereof, belonging to the field of organic-inorganic hybrid perovskite materials. The solar cell adopts a 2D hybrid perovskite thick-film material as a light absorption layer having thickness in a range of 500-800 nm, which is conducive to the full absorption of sunlight. The thick-film film material can be deposited from a precursor solution added with guanidine hydroiodide, and is composed of large grains growing along the thickness direction. The solar cell with an inverted structure prepared by using the thick-film material as a light absorption layer has an efficiency fluctuation less than 5% in a film thickness range of 500-800 nm. This is of great value for the preparation of high-performance hybrid perovskite solar cells by a large-area solution method.

A doped organic semiconductor is produced using the method of providing an organic semiconductor solution, contacting the organic semiconductor solution with CO.sub.2; and irradiating the organic semiconductor solution with ultraviolet light. A composition is described, the composition comprising an organic semiconductor; and a metal salt having the formula M.sup.+X.sup.− wherein X.sup.− is a monoanionic species; and wherein the ratio of M.sup.+ to X.sup.− in the hole transport material is less than about 1.00. An additional composition is described, the composition comprising an organic semiconductor; a metal salt having the formula M.sup.+X.sup.− wherein X.sup.− is a monoanionic species; and a metal carbonate; wherein the total metal content of the composition is approximately equal to the X.sup.− content of the composition.

The invention provides an optoelectronic device comprising a photoactive region, which photoactive region comprises: an n-type region comprising at least one n-type layer; a p-type region comprising at least one p-type layer; and, disposed between the n-type region and the p-type region: a layer of a perovskite semiconductor without open porosity. The perovskite semiconductor is generally light-absorbing. In some embodiments, disposed between the n-type region and the p-type region is: (i) a first layer which comprises a scaffold material, which is typically porous, and a perovskite semiconductor, which is typically disposed in pores of the scaffold material; and (ii) a capping layer disposed on said first layer, which capping layer is said layer of a perovskite semiconductor without open porosity, wherein the perovskite semiconductor in the capping layer is in contact with the perovskite semiconductor in the first layer. The layer of the perovskite semiconductor without open porosity (which may be said capping layer) typically forms a planar heterojunction with the n-type region or the p-type region. The invention also provides processes for producing such optoelectronic devices which typically involve solution deposition or vapour deposition of the perovskite. In one embodiment, the process is a low temperature process; for instance, the entire process may be performed at a temperature or temperatures not exceeding 150° C.