H10F10/166

Thin-film crystalline silicon solar cell using a nanoimprinted photonic-plasmonic back-reflector structure

Disclosed are embodiments of a thin-film photovoltaic technology including a single-junction crystalline silicon solar cell with a photonic-plasmonic back-reflector structure for lightweight, flexible energy conversion applications. The back-reflector enables high absorption for long-wavelength and near-infrared photons via diffraction and light-concentration, implemented by periodic texturing of the bottom-contact layer by nanoimprint lithography. The thin-film crystalline silicon solar cell is implemented in a heterojunction design with amorphous silicon, where plasma enhanced chemical vapor deposition (PECVD) is used for all device layers, including a low-temperature crystalline silicon deposition step. Excimer laser crystallization is used to integrate crystalline and amorphous silicon within a monolithic process, where a thin layer of amorphous silicon is converted to a crystalline silicon seed layer prior to deposition of a crystalline silicon absorber layer via PECVD. The crystalline nature of the absorber layer and the back-reflector enable efficiencies higher than what is achievable in other thin-film silicon devices.

Thin-film crystalline silicon solar cell using a nanoimprinted photonic-plasmonic back-reflector structure

Disclosed are embodiments of a thin-film photovoltaic technology including a single-junction crystalline silicon solar cell with a photonic-plasmonic back-reflector structure for lightweight, flexible energy conversion applications. The back-reflector enables high absorption for long-wavelength and near-infrared photons via diffraction and light-concentration, implemented by periodic texturing of the bottom-contact layer by nanoimprint lithography. The thin-film crystalline silicon solar cell is implemented in a heterojunction design with amorphous silicon, where plasma enhanced chemical vapor deposition (PECVD) is used for all device layers, including a low-temperature crystalline silicon deposition step. Excimer laser crystallization is used to integrate crystalline and amorphous silicon within a monolithic process, where a thin layer of amorphous silicon is converted to a crystalline silicon seed layer prior to deposition of a crystalline silicon absorber layer via PECVD. The crystalline nature of the absorber layer and the back-reflector enable efficiencies higher than what is achievable in other thin-film silicon devices.

Shingled solar cell module

A high efficiency configuration for a solar cell module comprises solar cells conductively bonded to each other in a shingled manner to form super cells, which may be arranged to efficiently use the area of the solar module, reduce series resistance, and increase module efficiency.

Shingled solar cell module

A high efficiency configuration for a solar cell module comprises solar cells conductively bonded to each other in a shingled manner to form super cells, which may be arranged to efficiently use the area of the solar module, reduce series resistance, and increase module efficiency.

Solar cell

A solar cell comprising a crystalline silicon substrate, a semiconductor layer arranged on a back surface of the substrate which is configured not to face a radiative source, when the solar cell is in use, and a transparent-conductive region arranged on a surface of the semiconductor layer, wherein the transparent conductive region comprises: a first layer having a first work function; and a second layer having a second work function and being interposed between the first layer and the semiconductor layer; wherein the second work function of the second layer is greater than the first work function of the first layer.

Solar cell

A solar cell comprising a crystalline silicon substrate, a semiconductor layer arranged on a back surface of the substrate which is configured not to face a radiative source, when the solar cell is in use, and a transparent-conductive region arranged on a surface of the semiconductor layer, wherein the transparent conductive region comprises: a first layer having a first work function; and a second layer having a second work function and being interposed between the first layer and the semiconductor layer; wherein the second work function of the second layer is greater than the first work function of the first layer.