The present disclosure discloses a high-efficiency silicon heterojunction (HJT) solar cell and a manufacturing method thereof, and belongs to the technical field of solar cells. In the solar cell of the present disclosure, an N-type crystal silicon wafer is successively provided with a thin SiO.sub.2 layer, a hydrogenated amorphous carbon silicon oxide film layer, a carbon doped SiO.sub.2 layer, an amorphous silicon doped N-type layer, a TCO conductive layer, and an electrode on a front surface; and successively provided with a thin SiO.sub.2 layer, a hydrogenated amorphous carbon silicon oxide film layer, a carbon doped SiO.sub.2 layer, an amorphous silicon doped P-type layer, a TCO conductive layer, and an electrode on a rear surface. The amorphous silicon doped P-type layer includes a lightly boron doped amorphous silicon layer and a heavily boron doped amorphous silicon layer.

The present disclosure discloses a high-efficiency silicon heterojunction (HJT) solar cell and a manufacturing method thereof, and belongs to the technical field of solar cells. In the solar cell of the present disclosure, an N-type crystal silicon wafer is successively provided with a thin SiO.sub.2 layer, a hydrogenated amorphous carbon silicon oxide film layer, a carbon doped SiO.sub.2 layer, an amorphous silicon doped N-type layer, a TCO conductive layer, and an electrode on a front surface; and successively provided with a thin SiO.sub.2 layer, a hydrogenated amorphous carbon silicon oxide film layer, a carbon doped SiO.sub.2 layer, an amorphous silicon doped P-type layer, a TCO conductive layer, and an electrode on a rear surface. The amorphous silicon doped P-type layer includes a lightly boron doped amorphous silicon layer and a heavily boron doped amorphous silicon layer.

The present inventive concept provides a solar cell and a manufacturing method therefor, the solar cell comprising: a semiconductor substrate; a first transparent electrode layer provided on one surface of the semiconductor substrate; and a first electrode provided on one surface of the first transparent electrode layer, wherein the first electrode comprises a first pattern layer pattern-formed through a deposition process using a shadow mask.

A Tunnel Oxide Passivated Contact (TOPCon) solar cell, and a method therefor are provided. The TOPCon solar cell includes: a silicon substrate; a tunneling layer formed on a surface of the silicon substrate; a polycrystalline silicon layer formed on a surface of the tunneling layer; a polycrystalline germanium layer formed on a surface of the polycrystalline silicon layer; a lower passivation layer formed on a surface of the polycrystalline germanium layer; and a lower electrode formed on the lower passivation layer and electrically connected to the polycrystalline germanium layer.

A solar cell, a method for manufacturing the solar cell, and an electric device are provided. The solar cell includes: a substrate provided with a first surface and a second surface arranged opposite to the first surface, the first surface including first regions and second regions, which are alternately arranged; a tunnel oxide layer and a doped polysilicon layer arranged on the first regions in the first surface, the tunnel oxide layer being arranged between the first surface and the doped polysilicon layer; a first passivation layer including a first passivation sub-layer covering the doped polysilicon layer in the first regions and a second passivation sub-layer covering the second regions; and an intrinsic amorphous silicon layer and a doped amorphous silicon layer arranged on the second surface, the intrinsic amorphous silicon layer being arranged between the second surface and the doped amorphous silicon layer.

A solar cell, a method for manufacturing the solar cell, and an electric device are provided. The solar cell includes: a substrate provided with a first surface and a second surface arranged opposite to the first surface, the first surface including first regions and second regions, which are alternately arranged; a tunnel oxide layer and a doped polysilicon layer arranged on the first regions in the first surface, the tunnel oxide layer being arranged between the first surface and the doped polysilicon layer; a first passivation layer including a first passivation sub-layer covering the doped polysilicon layer in the first regions and a second passivation sub-layer covering the second regions; and an intrinsic amorphous silicon layer and a doped amorphous silicon layer arranged on the second surface, the intrinsic amorphous silicon layer being arranged between the second surface and the doped amorphous silicon layer.

The disclosure provides a solar cell, a cell component, and a photovoltaic system. The solar cell includes a silicon substrate, first doped layers, second doped layers, a first passivation film layer, and first welding spots. The silicon substrate has a first surface and a second surface opposite each other. The first doped layers are arranged on the first surface. The first doped layers each have several first preset zones. The several second doped layers are arranged on the first preset zones, and the second doped layers are arranged in a spaced manner. The first passivation film layer is arranged on the second doped layers and the first doped layers. The first welding spots are arranged on the first passivation film layer. Orthographic projections of the first welding spots on the first doped layers at least partially overlap orthographic projections of the second doped layers on the first doped layers.

The disclosure provides a solar cell, a cell component, and a photovoltaic system. The solar cell includes a silicon substrate, first doped layers, second doped layers, a first passivation film layer, and first welding spots. The silicon substrate has a first surface and a second surface opposite each other. The first doped layers are arranged on the first surface. The first doped layers each have several first preset zones. The several second doped layers are arranged on the first preset zones, and the second doped layers are arranged in a spaced manner. The first passivation film layer is arranged on the second doped layers and the first doped layers. The first welding spots are arranged on the first passivation film layer. Orthographic projections of the first welding spots on the first doped layers at least partially overlap orthographic projections of the second doped layers on the first doped layers.

Provided are a heterojunction solar cell film deposition apparatus, method and system, a solar cell, a module, and a power generation system. The heterojunction solar cell film deposition apparatus is configured for amorphous silicon-based film deposition, and comprises a loading cavity, a preheating cavity, intrinsic process cavities, doping process cavities and an unloading cavity that are linearly arranged in sequence, the cavities being isolated from each other by means of an isolating valve. At least two intrinsic process cavities are provided and are configured for deposition by means of an intrinsic layer silicon film process; and at least one doping process cavity is provided and is configured for deposition by means of an N-type silicon film or P-type silicon film process. The preheating cavity comprises a heating preheating chamber and a preheating buffer chamber that is configured for adjusting the gas and pressure atmosphere.

Provided are a heterojunction solar cell film deposition apparatus, method and system, a solar cell, a module, and a power generation system. The heterojunction solar cell film deposition apparatus is configured for amorphous silicon-based film deposition, and comprises a loading cavity, a preheating cavity, intrinsic process cavities, doping process cavities and an unloading cavity that are linearly arranged in sequence, the cavities being isolated from each other by means of an isolating valve. At least two intrinsic process cavities are provided and are configured for deposition by means of an intrinsic layer silicon film process; and at least one doping process cavity is provided and is configured for deposition by means of an N-type silicon film or P-type silicon film process. The preheating cavity comprises a heating preheating chamber and a preheating buffer chamber that is configured for adjusting the gas and pressure atmosphere.