A radiographic image detector includes a phosphor layer, a heat shield layer, and a photoelectric converter in this order, wherein the heat shield layer has a thickness T (m) and a thermal conductivity C (W/m.Math.K) satisfying that C/T is from 0.004 to 5.

A semiconductor device includes a first semiconductor layer of a first conductivity type having a primary surface and having a sensor therein, a second semiconductor layer of a second conductivity type having a circuit element formed therein. The second semiconductor layer is formed at a same side of the primary surface of the first semiconductor layer. The device further includes an insulating layer formed between the first semiconductor layer and the second semiconductor layer. The insulating layer is disposed on the primary surface of the first semiconductor layer and surrounds the circuit element, and includes a charge-attracting semiconductor pattern of the first conductivity type that is disposed near the circuit element so as to attract electrical charges generated in the insulating layer.

A light detection device includes: a TFT having a semiconductor layer supported on a substrate, a source electrode, a drain electrode, and a gate electrode; a photodiode having a bottom electrode electrically connected to the drain electrode, a semiconductor laminate structure, and a top electrode; and an electrode made of the same conductive film as the bottom electrode and arranged on the semiconductor layer with an insulating layer interposed therebetween.

The present disclosure provides a semiconductor device including: a first semiconductor layer including a first region and a second region adjacent to the first region; a first insulator layer provided above the first semiconductor layer; an intermediate semiconductor layer, having an n-type conduction, provided above the first region of the first semiconductor layer and above the first insulator layer; a second insulator layer provided above the intermediate semiconductor layer; a second semiconductor layer provided above the first region of the first semiconductor layer and above the second insulator layer; a sensor formed in the second region of the first semiconductor layer; a contact electrode connected to the intermediate semiconductor layer; and a circuit element formed in the second semiconductor layer.

A semiconductor device including a substrate, at least one gate electrode, at least two silicon oxide layers comprising a first silicon oxide layer and a second silicon oxide layer, wherein the first silicon oxide layer is nearer to the substrate than the second silicon oxide layer, and wherein a thickness of the first silicon oxide layer is greater than or equal to a thickness of the second silicon oxide layer, and a semiconductor layer disposed between at least a portion of the first silicon oxide layer and at least a portion of the second silicon oxide layer. Also, an image pick-up device and a radiation imaging device including the semiconductor device.

Disclosed is an image sensor, which is characterized by increased strength of adhesion between a photoconductive layer and a front electrode made of aluminum, and which includes a first electrode composed of aluminum, copper or an aluminum-copper alloy on a substrate, a buffer layer formed on the first electrode, a photoconductive layer formed on the buffer layer, and a second electrode formed on the photoconductive layer, wherein the buffer layer includes a material having higher strength of adhesion than the photoconductive layer to the first electrode.

The disclosed embodiments include an image sensor and a method to manufacture thereof. In one embodiment, the method includes forming a plurality of semiconductor slices having a uniform width, at least two of the semiconductor slices having different lengths, and each of the semiconductor slices having a slice edge defining a side of the semiconductor slice. The method further includes arranging the semiconductor slices to form a semi-rectangular shape defining boundaries of the image sensor, each of the semiconductor slices being disposed proximate to another semiconductor slice of the plurality of semiconductor slices. Forming each semiconductor slice includes forming a plurality of pixel arrays over the semiconductor slice, the pixel arrays having an approximately uniform pixel pitch, and forming a seal ring around the semiconductor slice, the seal ring enclosing the semiconductor slice and the pixel arrays of the semiconductor slice, and each semiconductor slice having a different seal ring.

Some embodiments are associated with an X-ray source configured to generate X-rays directed toward an object, wherein the X-ray source is to: (i) generate a first energy X-ray pulse, (ii) switch to generate a second energy X-ray pulse, and (iii) switch back to generate another first energy X-ray pulse. A detector may be associated with multiple image pixels, and the detector includes, for each pixel: an X-ray sensitive element to receive X-rays; a first storage element and associated switch to capture information associated with the first energy X-ray pulses; and a second storage element and associated switch to capture information associated with the second energy X-ray pulse. A controller may synchronize the X-ray source and detector.

An image capture device to produce images of an object in contact with or in immediate proximity to the device comprises a sensor and illumination means capable of emitting a first type of radiation to illuminate an object in order to obtain an image thereof, the sensor comprising pixels that are sensitive to a second type of radiation dependent on the first type of radiation emitted by the illumination means. The sensor is formed on a monolithic substrate comprising multiple passages that are transparent to the first type of radiation. The illumination means comprise at least one source of the first type of radiation positioned so as to face one of the passages. The invention also relates to a method for producing this device.

An ion implantation method includes irradiating a wafer having a first temperature with a first ion beam such that a predetermined channeling condition is satisfied and irradiating the wafer having a second temperature different from the first temperature with a second ion beam such that the predetermined channeling condition is satisfied, after the irradiation of the first ion beam.