According to an aspect, an image sensor package includes a substrate, an image sensor die coupled to the substrate, and a transparent member including a first surface and a second surface, where the second surface of the transparent member is coupled to the image sensor die via one or more dam members such that an empty space exists between an active area of the image sensor die and the second surface of the transparent member. The image sensor package includes a light blocking member coupled to or defined by the transparent member.

In one embodiment described herein, a device includes optically reflective metal patches positioned within a dielectric substrate. A dielectric barrier layer separates the reflective metal patches and the dielectric substrate to prevent diffusion of the reflective metal into the dielectric substrate. An optically transparent dielectric spacer layer is deposited thereon, and an array of metal elements extend from the dielectric spacer layer. A dielectric coating is applied to the top wall and sidewalls of each metal element. A conductive barrier material is positioned between the base wall of each metal element and the dielectric spacer layer. A tunable dielectric material is positioned within the gaps between adjacent metal elements.

An electromagnetic radiation detector includes an InP substrate having a first surface opposite a second surface; a first InGaAs electromagnetic radiation absorber stacked on the first surface and configured to absorb a first set of electromagnetic radiation wavelengths; a set of one or more buffer layers stacked on the first InGaAs electromagnetic radiation absorber and configured to absorb at least some of the first set of electromagnetic radiation wavelengths; a second InGaAs electromagnetic radiation absorber stacked on the set of one or more buffer layers and configured to absorb a second set of electromagnetic radiation wavelengths; and an immersion condenser lens formed on the second surface and configured to direct electromagnetic radiation through the InP substrate and toward the first InGaAs electromagnetic radiation absorber and the second InGaAs electromagnetic radiation absorber.

An electromagnetic radiation detector includes an InP substrate having a first surface opposite a second surface; a first InGaAs electromagnetic radiation absorber stacked on the first surface and configured to absorb a first set of electromagnetic radiation wavelengths; a set of one or more buffer layers stacked on the first InGaAs electromagnetic radiation absorber and configured to absorb at least some of the first set of electromagnetic radiation wavelengths; a second InGaAs electromagnetic radiation absorber stacked on the set of one or more buffer layers and configured to absorb a second set of electromagnetic radiation wavelengths; and an immersion condenser lens formed on the second surface and configured to direct electromagnetic radiation through the InP substrate and toward the first InGaAs electromagnetic radiation absorber and the second InGaAs electromagnetic radiation absorber.

Various optoelectronic modules are described that include an optoelectronic device (e.g., a light emitting or light detecting element) and a transparent cover. Non-transparent material is provided on the sidewalls of the transparent cover, which, in some implementations, can help reduce light leakage from the sides of the transparent cover or can help prevent stray light from entering the module. Fabrication techniques for making the modules also are described.

An apparatus for the wafer level packaging (WLP) of micro-bolometer vacuum package assemblies (VPAs), in one embodiment, includes a wafer alignment and bonding chamber, a bolometer wafer chuck and a lid wafer chuck disposed within the chamber in vertically facing opposition to each other, means for creating a first ultra-high vacuum (UHV) environment within the chamber, means for heating and cooling the bolometer wafer chuck and the lid wafer chuck independently of each other, means for moving the lid wafer chuck in the vertical direction and relative to the bolometer wafer chuck, means for moving the bolometer wafer chuck translationally in two orthogonal directions in a horizontal plane and rotationally about a vertical axis normal to the horizontal plane, and means for aligning a fiducial on a bolometer wafer held by the bolometer wafer chuck with a fiducial on a lid wafer held by the lid wafer chuck.

The present disclosure relates to a method of making an optical assembly. An optical device is secured in a fixture, the optical device having an optical surface, wherein a silicone film is positioned with respect to the optical surface, the silicone film having a distal surface relative to the optical surface. The method includes, among other features, imprinting the distal surface of the silicone film to create a surface imprint in the distal surface of the silicone film.

A semiconductor device package includes a carrier, a sensor element disposed on or within the carrier, a cover and a filter. The cover includes a base substrate and a periphery barrier. The base substrate includes an inner sidewall. The inner sidewall of the base substrate defines a penetrating hole extending from a top surface of the base substrate to a bottom surface of the base substrate; at least a portion of the inner sidewall of the base substrate is tilted. The periphery barrier is coupled to the bottom surface of the base substrate and contacts a top surface of the carrier. The filter is disposed on the top surface of the base substrate and covers the penetrating hole.

Systems for reducing dark current in a photodiode include a heater configured to heat a photodiode above room temperature. A reverse bias voltage source is configured to apply a reverse bias voltage to the heated photodiode to reduce a dark current generated by the photodiode.

Methods and systems for reducing dark current in a photodiode include heating a photodiode above room temperature. A reverse bias voltage is applied to the heated photodiode to reduce a dark current generated by the photodiode.