H10F77/50

Semiconductor device comprising an emitter of radiation and a photosensor and appertaining production method

The semiconductor device comprises a semiconductor substrate (1), a photosensor (2) integrated in the substrate (1) at a main surface (10), an emitter (12) of radiation mounted above the main surface (10), and a cover (6), which is at least partially transmissive for the radiation, arranged above the main surface (10). The cover (6) comprises a cavity (7), and the emitter (12) is arranged in the cavity (7). A radiation barrier (9) can be provided on a lateral surface of the cavity (7) to inhibit cross-talk between the emitter (12) and the photosensor (2).

Package for optical semiconductor device

A package for an optical semiconductor device includes an eyelet, a signal lead inserted in a through hole formed in the eyelet, and sealing glass sealing the signal lead in the through hole. The signal lead includes a first portion, a second portion and a third portion that are greater in diameter than the first portion and on opposite sides of the first portion, a first tapered portion extending from the second portion to the first portion, and a second tapered portion extending from the third portion to the first portion. The first portion and the first and second tapered portions are buried in the sealing glass. The total length of a part of the second portion in the sealing glass and a part of the third portion in the sealing glass is 0.2 mm or less.

Encapsulation layer thickness regulation in light emitting device
09831473 · 2017-11-28 · ·

An ink jet process is used to deposit a material layer to a desired thickness. Layout data is converted to per-cell grayscale values, each representing ink volume to be locally delivered. The grayscale values are used to generate a halftone pattern to deliver variable ink volume (and thickness) to the substrate. The halftoning provides for a relatively continuous layer (e.g., without unintended gaps or holes) while providing for variable volume and, thus, contributes to variable ink/material buildup to achieve desired thickness. The ink is jetted as liquid or aerosol that suspends material used to form the material layer, for example, an organic material used to form an encapsulation layer for a flat panel device. The deposited layer is then cured or otherwise finished to complete the process.

PROXIMITY DETECTOR DEVICE WITH INTERCONNECT LAYERS AND RELATED METHODS
20170330989 · 2017-11-16 ·

A proximity detector device may include a first interconnect layer including a first dielectric layer, and first electrically conductive traces carried thereby, an IC layer above the first interconnect layer and having an image sensor IC, and a light source IC laterally spaced from the image sensor IC. The proximity detector device may include a second interconnect layer above the IC layer and having a second dielectric layer, and second electrically conductive traces carried thereby. The second interconnect layer may have first and second openings therein respectively aligned with the image sensor IC and the light source IC. Each of the image sensor IC and the light source IC may be coupled to the first and second electrically conductive traces. The proximity detector device may include a lens assembly above the second interconnect layer and having first and second lenses respectively aligned with the first and second openings.

Semiconductor device, manufacturing method thereof, and electronic apparatus
09818785 · 2017-11-14 · ·

A semiconductor device having a first semiconductor section including a first wiring layer at one side thereof; a second semiconductor section including a second wiring layer at one side thereof, the first and second semiconductor sections being secured together with the respective first and second wiring layer sides of the first and second semiconductor sections facing each other; a conductive material extending through the first semiconductor section to the second wiring layer of the second semiconductor section and by means of which the first and second wiring layers are in electrical communication; and an opening, other than the opening for the conductive material, which extends through the first semiconductor section to the second wiring layer.

Riflescope with integrated wind sensor and targeting display

Techniques are disclosed for providing the weapon-mounted optical scope that provides for wind sensing and the display a ballistic solution without the need for a separate device. Embodiments may include various additional sensors housed within the weapon-mounted optical scope to provide data for the ballistic solution calculation. Embodiments may further include a display at the input aperture rather than internally at the first-focal-plane, enabling for simpler, more cost effective embodiments. Additionally or alternatively, embodiments may include a laser, separate from the wind sensing laser, to perform range-finding functions, and/or an enhanced-image assembly.

Electronic package

The present description concerns a package for an electronic device. The package including a plate and a lateral wall, separated by a layer made of a bonding material and at least one region made of a material configured to form in the region an opening between the inside and the outside of the package when the package is heated.

Electronic package

The present description concerns a package for an electronic device. The package including a plate and a lateral wall, separated by a layer made of a bonding material and at least one region made of a material configured to form in the region an opening between the inside and the outside of the package when the package is heated.

AUTOMATED ASSEMBLY AND MOUNTING OF SOLAR CELLS ON SPACE PANELS

The present disclosure provides methods of fabricating a multijunction solar cell panel in which one or more of the steps are performed using an automated process. In some embodiments, the automated process uses machine vision.

PHOTOVOLTAIC MODULE

A PV module includes a transparent substrate, a first solar cell unit, a crystalline silicon solar cell, and a spacer. The first solar cell unit is between the transparent substrate and the crystalline silicon solar cell, and the first solar cell unit includes a first electrode, a second electrode, and a I-III-VI semiconductor layer between the first electrode and the second electrode. The I-III-VI semiconductor layer includes at least gallium (Ga) and sulfur (S), and the energy gap thereof is more than that of crystalline silicon. Moreover, the crystalline silicon solar cell and the first solar cell unit are separated by the spacer.