Approaches for silicon photonics integration are provided. A method includes: forming at least one encapsulating layer over and around a photodetector; thermally crystallizing the photodetector material after the forming the at least one encapsulating layer; and after the thermally crystallizing the photodetector material, forming a conformal sealing layer on the at least one encapsulating layer and over at least one device. The conformal sealing layer is configured to seal a crack in the at least one encapsulating layer. The photodetector and the at least one device are on a same substrate. The at least one device includes a complementary metal oxide semiconductor device or a passive photonics device.

Method of encapsulating a semiconductor structure comprising providing a semiconductor structure comprising an opto-electric element located in a cavity formed between a substrate and a cap layer, the cap layer being made of a material transparent to light, and having a flat upper surface; forming at least one protrusion on the cap layer; bringing the at least one protrusion of the cap layer in contact with a tool having a flat surface region, and applying a opaque material to the semiconductor structure where it is not in contact with the tool; and removing the tool thereby providing an encapsulated optical semiconductor device having a transparent window integrally formed with the cap layer.

An optical coupling device includes a primary conductive plate, a light-emitting part, a secondary conductive plate, a light-receiving part, and a first conductive part. The light-emitting part is located on the primary conductive plate, converts an electrical signal to light, and emits the light. The secondary conductive plate is spaced apart from the primary conductive plate, and faces the light-emitting part. The light-receiving part is disposed on the secondary conductive plate to face the light-emitting part, and converts light from the light-emitting part to an electrical signal. The first conductive part is disposed at a side facing the light-emitting part, and has a point on which an electric field generated by a potential difference between the primary conductive plate and the secondary conductive plate is concentrated.

The present disclosure relates to an optical sensor module, an optical sensing accessory, and an optical sensing device. An optical sensor module comprises a light source, a photodetector, and a substrate. The light source is configured to convert electric power into radiant energy and emit light to an object surface. The photodetector is configured to receive the light from an object surface and convert radiant energy into electrical current or voltage. An optical sensing accessory and an optical sensing device comprise the optical sensor module and other electronic modules to have further applications.

An optoelectronic component including a connection carrier comprising a structured carrier strip in which interspaces are filled with an electrically insulating material and an optoelectronic semiconductor chip attached and electrically connected to a top portion of the connection carrier, wherein the electrically insulating material terminates substantially flush with the carrier strip in places or the carrier strip projects beyond the electrically insulating material, and the carrier strip is not covered by the electrically insulating material on the top portion and/or on a bottom portion of the connection carrier.

The present invention relates to a solar cell encapsulant sheet enables achievement of a higher conversion efficiency of a solar cell and can suppress a PID phenomenon of a solar cell well, and specifically, it provides a solar cell encapsulant sheet formed of a material comprising at least one ethylene resin selected from the group consisting of an ethylene--olefin copolymer, an ethylene homopolymer, and an ethylene-unsaturated ester copolymer, wherein the volume resistivity value of the material measured at 23 C. is 110.sup.17 .Math.cm or cm more and the average luminous transmittance of the material within a wavelength range of from 400 nm to 1200 nm is 91% or more.

The present invention relates to a curable silicone composition comprising: (A) an organopolysiloxane represented by a specific average unit formula, (B) an optional straight-chain organopolysiloxane having at least two alkenyl groups and not having any silicon-bonded hydrogen atoms in a molecule, (C) an organopolysiloxane having at least two silicon-bonded hydrogen atoms in a molecule, and (D) a hydrosilylation reaction catalyst. The curable silicone composition has high reactivity and forms a cured product with low gas permeability.

The following configuration is adopted in order to provide a highly reliable optival sensor device which enhances the reliability of devices without making the devices unsuitable for size and thickness reductions. The light sensor comprises an element-mounting portion (3) having a cavity and a lid member closely attached thereinto, the lid member being composed of: a window (2) constituted of a phosphate-based glass to which properties approximate to a spectral luminous efficacy properties have been imparted by compositional control; and a frame (1) constituted of a phosphate-based glass having light-shielding properties. The lid member is a Laminated glass member obtained by cutting the phosphate-based glass having the spectral luminous efficacy properties into individual pieces, fitting the glass piece into the opening of the phosphate-based glass (1) having light-shielding properties, the opening having been formed so as to have a size approximately equal to the cavity size, and melting and integrating the glasses member.

An image sensing device may include an interconnect layer and grid array contacts carried by the interconnect layer, and an image sensor IC carried by the interconnect layer and coupled to the grid array contacts, the image sensor IC having an image sensing surface. The image sensing device may include a transparent plate carried by the image sensor IC and aligned with the image sensing surface, and a cap carried by the interconnect layer and having an opening aligned with the image sensing surface. The cap may have an upper wall spaced above the interconnect layer and the image sensor IC to define an internal cavity, and the cap may define an air vent coupled to the internal cavity.

Photodetector structures and methods of manufacture are provided. The method includes forming undercuts about detector material formed on a substrate. The method further includes encapsulating the detector to form airgaps from the undercuts. The method further includes annealing the detector material causing expansion of the detector material into the airgaps.