A semiconductor device for restraining snapback is provided. The semiconductor device includes IGBT and diode regions. In a view of n-type impurity concentration distribution along a direction from a front surface to a rear surface, a local minimum value of an n-type impurity concentration is located at a border between cathode and buffer regions. A local maximum value of n-type impurity concentration is located in the buffer region. At least one of the butler and cathode regions includes a crystal defect region having crystal detects in a higher concentration than a region therearound. A peak of a crystal defect concentration in a view of crystal defect concentration distribution along the direction from the front surface to the rear surface is located in a region on the rear surface side with respect to a specific position having the n-type impurity concentration which is a half of the local maximum value.

Switching loss is reduced. A first surface of a semiconductor substrate has a portion included in an IGBT region and a portion included in a diode region. Trenches formed in the first surface include a gate trench and a boundary trench disposed between the gate trench and the diode region. A fourth layer of the semiconductor substrate is provided on the first surface and has a portion included in the diode region. The fourth layer includes a trench-covering well region that covers the deepest part of the boundary trench, a plurality of isolated well regions, and a diffusion region that connects the trench-covering well region and the isolated well regions. The diffusion region has a lower impurity concentration than that of the isolated well regions. A first electrode is in contact with the isolated well regions and away from the diffusion region.

A Reverse Bipolar Junction Transistor (RBJT) integrated circuit comprises a bipolar transistor and a parallel-connected distributed diode, where the base region is connected neither to the collector electrode nor to the emitter electrode. The bipolar transistor has unusually high emitter-to-base and emitter-to-collector reverse breakdown voltages. In the case of a PNP-type RBJT, an N base region extends into a P epitaxial layer, and a plurality of P++ collector regions extend into the base region. Each collector region is annular, and rings a corresponding diode cathode region. Parts of the epitaxial layer serve as the emitter, and other parts serve as the diode anode. Insulation features separate metal of the collector electrode from the base region, and from P type silicon of the epitaxial layer, so that the diode cathode is separated from the base region. This separation prevents base current leakage and reduces power dissipation during steady state on operation.

A semiconductor device comprising a semiconductor substrate having upper and lower surfaces and a hydrogen containing region containing hydrogen and a lifetime control region is provided. The carrier concentration distribution of the hydrogen containing region has: a first local maximum point; a second local maximum point closest to the first local maximum point among local maximum points positioned between the first local maximum point and the upper surface; a first intermediate point of the local minimum between the first and second local maximum points; and a second intermediate point closest to the second local maximum point among local minimum points or flat points where the carrier concentration remains constant positioned between the second local maximum point and the upper surface. The lifetime control region is positioned at least between the first and second local maximum points. The first intermediate point has a lower carrier concentration than the second intermediate point.

A semiconductor device of embodiments includes a transistor region and a diode region. The transistor region includes: a first conductive type first semiconductor region, a second conductive type second semiconductor region, a first conductive type third semiconductor region in this order in a semiconductor layer; a second conductive type fourth semiconductor region and a first conductive type fifth semiconductor region on the third semiconductor region and arranged alternately in a first direction; a first conductive type sixth semiconductor region between the third and the fourth semiconductor region a first trench spaced from the sixth semiconductor region; a gate electrode in the first trench; a first electrode having a first portion, a bottom surface of the first portion being in contact with the third semiconductor region and side surfaces of the first portion being in contact with the fourth, the fifth, and the sixth semiconductor regions; and a second electrode.

Provided is a semiconductor device, including a semiconductor substrate having an upper surface and a lower surface and including a bulk donor, wherein a hydrogen chemical concentration distribution of the semiconductor substrate in a depth direction is flat, monotonically increasing, or monotonically decreasing from the lower surface to the upper surface except for a portion where a local hydrogen concentration peak is provided; and a donor concentration of the semiconductor substrate is higher than a bulk donor concentration over an entire region from the upper surface to the lower surface. Hydrogen ions may be irradiated from the upper surface or the lower surface of the semiconductor substrate so as to penetrate the semiconductor substrate in the depth direction.

A semiconductor device is a semiconductor device in which a transistor is formed on a semiconductor substrate including a first main surface and a second main surface, a transistor region of the semiconductor substrate includes an n-type first semiconductor layer, a p-type second semiconductor layer provided closer to the first main surface than the first semiconductor layer, an n-type third semiconductor layer provided closer to a first main surface side than the second semiconductor layer, a trench gate that penetrates the third semiconductor layer and the second semiconductor layer in a thickness direction from the first main surface and reaches an inside of the first semiconductor layer, and an interlayer insulating film provided on the trench gate. The interlayer insulating film includes at least one narrow width portion in which a length in a width direction intersecting an extending direction of the trench gate in planar view is partially narrowed.

A semiconductor device has transistor portions and diode portions. The transistor portions have a semiconductor substrate of a first conductivity type, a first semiconductor region of a second conductivity type, second semiconductor regions of the first conductivity type, gate insulating films, gate electrodes, a first semiconductor layer of the first conductivity type, a third semiconductor region of the second conductivity type, a first electrode, and a second electrode. The diode portions have the semiconductor substrate, the first semiconductor region, the first semiconductor layer, a fourth semiconductor region of the first conductivity type, the first electrode, and the second electrode. The first semiconductor layer has a predetermined region, a depth of the predetermined region from a second main surface of the semiconductor substrate is greater than a depth of a region of the first semiconductor layer excluding the predetermined region, from the second main surface of the semiconductor substrate.

A semiconductor device includes a first-conductivity-type semiconductor layer including an active region in which a transistor having impurity regions is formed and a marginal region surrounding the active region, a second-conductivity-type channel layer formed between the active region and the marginal region and forming a front surface of the semiconductor layer, at least one gate trench formed in the active region to extend from the front surface of the semiconductor layer through the channel layer, a gate insulation film formed on an inner surface of the gate trench, a gate electrode formed inside the gate insulation film in the gate trench, and at least one isolation trench arranged between the active region and the marginal region to surround the active region and extending from the front surface of the semiconductor layer through the channel layer, the isolation trench having a depth equal to that of the gate trench.

A semiconductor device, including a semiconductor substrate, a plurality of trenches formed on a front surface of the semiconductor substrate, a plurality of gate electrodes formed in the trenches, a base region and an anode region formed between adjacent trenches respectively in first and second element regions of the semiconductor substrate, a plurality of emitter regions and contact regions selectively formed in the base region, an interlayer insulating film covering the gate electrodes, first and second contact holes penetrating the interlayer insulating film, a plurality of contact plugs embedded in the first contact holes, a first electrode contacting the contact plugs and contacting the anode region via the second contact hole, a collector region and a cathode region formed on a back surface of the semiconductor substrate respectively in the first and second element regions, and a second electrode contacting the collector region and the cathode region.