An ultra-thin film superconducting tape and method for fabricating same is disclosed. Embodiments are directed to a superconducting tape being fabricated by processes which include removing a portion of the superconducting tape's substrate subsequent the substrate's initial formation, whereby a thickness of the superconducting tape is reduced to 15-80 μm.

Disclosed herein are quantum dot devices, as well as related computing devices and methods. For example, in some embodiments, a quantum dot device may include: a quantum well stack including a quantum well layer and a barrier layer; a first gate metal above the quantum well stack, wherein the barrier layer is between the first gate metal and the quantum well layer; and a second gate metal above the quantum well stack, wherein the barrier layer is between the second gate metal and the quantum well layer, and a material structure of the second gate metal is different from a material structure of the first gate metal.

A superconducting wire according to the present disclosure includes: a base material; a superconductor layer formed on each of the respective surfaces of the base material; and a conductive protection layer formed on each of the surfaces of the respective superconductor layers. The thickness of each of the conductive protection layers is 5% or less of the skin depth when a high-frequency current flows through the superconducting wire. The material for forming the conductive protection layer may be, for example, silver.

The present invention addresses a problem of providing an MgB2 wire material having a small reversible bending radius, a superconducting coil using the same, and an MRI without lowering a critical current value and a critical current density of the MgB2 wire material to an extreme. To solve the problem, provided are a superconducting wire having a plurality of MgB2 strands and a first base metal, a superconducting coil using the same, and an MRI, the superconducting wire being characterized in that in a cross section orthogonal to a wire longitudinal direction, a center point of an area surrounded by the plurality of MgB2 strands and a center axis of a cross section of the superconducting wire are disposed in separated positions.

A superconductor tape and method for manufacturing, measuring, monitoring, and controlling same are disclosed. Embodiments are directed to a superconductor tape which includes a superconductor film overlying a buffer layer which overlies a substrate. In one embodiment, the superconductor film is defined as having a c-axis lattice constant higher than 11.74 Angstroms. In another embodiment, the superconductor film comprises BaMO.sub.3, where M=Zr, Sn, Ta, Nb, Hf, or Ce, and which has a (101) peak of BaMO.sub.3 elongated along an axis that is between 60° to 90° from an axis of the (001) peaks of the superconductor film. These and other embodiments achieve well-aligned nanocolumnar defects and thus a high lift factor, which can result in superior critical current performance of the tape in, for example, high magnetic fields.

A superconductor tape and method for manufacturing, measuring, monitoring, and controlling same are disclosed. Embodiments are directed to a superconductor tape which includes a superconductor film overlying a buffer layer which overlies a substrate. In one embodiment, the superconductor film is defined as having a c-axis lattice constant higher than 11.74 Angstroms. In another embodiment, the superconductor film comprises BaMO.sub.3, where M=Zr, Sn, Ta, Nb, Hf, or Ce, and which has a (101) peak of BaMO.sub.3 elongated along an axis that is between 60° to 90° from an axis of the (001) peaks of the superconductor film. These and other embodiments achieve well-aligned nanocolumnar defects and thus a high lift factor, which can result in superior critical current performance of the tape in, for example, high magnetic fields.

A stacked quantum computing device including a first chip that includes a first dielectric substrate and a superconducting qubit on the first dielectric substrate, and a second chip that is bonded to the first chip and includes a second dielectric substrate, a qubit readout element on the second dielectric substrate, a control wire on the second dielectric substrate, a dielectric layer covering the control wire, and a shielding layer covering the dielectric layer.

An oxide superconducting wire includes a superconductor laminate including an oxide superconducting layer on at least one surface of a base material, and a plating layer which is included in a stabilizing layer of the superconductor laminate and formed by plating. A surface roughness Ra of the plating layer is 1.0 μm or more and 2.0 μm or less. An entire average crystal grain size of the plating layer is 0.86 μm or more and 3.05 μm or less.

A device, system and method for measuring the temperature at the center of a normal hotspot and the heat escape time in superconducting filament or nanowire toward the substrate. The device includes structured layers; a superconducting filament is implemented as an active layer where an electrical current pulse or single photon radiation generates a hot spot; a sensitive semiconductor layer of germanium serves as a temperature sensor (thermometer); and a thin layer of insulating silicon oxide is intercalated between the superconducting layer and the germanium having a thickness in the range of 2-10 nm and width 5-100 μm. This device provides a direct measurement of the temperature at the center of a hot spot and determination of the heat escape time toward a substrate; and can be used to determine the sensitivity of a superconducting single photon detector device to a next upcoming photon.

Described herein are devices incorporating plasmon Casimir cavities, which modify the distribution of allowable plasmon modes within the cavities. The plasmon Casimir cavities can drive charge carriers from or to an electronic device adjoining the plasmon Casimir cavity by modifying the distribution of zero-point energy-driven plasmons on one side of the electronic device to be different from the distribution of zero-point energy-driven plasmons on the other side of the electronic device. The electronic device can exhibit a structure that permits transport or capture of carriers in very short time intervals, such as in 1 picosecond or less.