Degradation of image quality is suppressed. A solid-state imaging device according to an embodiment includes: a plurality of first photoelectric conversion elements having a first sensitivity; a plurality of second photoelectric conversion elements having a second sensitivity lower than the first sensitivity; a plurality of charge storage regions that stores charge generated by each of the plurality of second photoelectric conversion elements; a plurality of first color filters; and a plurality of second color filters. In each of the plurality of first photoelectric conversion elements, the second color filter for the second photoelectric conversion element included in the charge storage region closest to the first photoelectric conversion element transmit a wavelength component identical to that of the first color filter for the first photoelectric conversion element closest to the charge storage region.

Provided is an a imaging device that acquires a distance image excluding influence of background light in one frame scanning period and acquires a visible image in a separate frame from a single imaging sensor, and includes an infrared light source that emits infrared light, and a solid state imaging device including a plurality of first pixels and a plurality of second pixels, which respectively include vertical overflow drains, and are arranged in a matrix on a semiconductor substrate, the plurality of first pixels converting the infrared light into signal charges, and the plurality of second pixels converting visible light into signal charges. The solid state imaging device outputs a first signal obtained from the plurality of first pixels in an irradiation period of infrared light, and a second signal obtained from the plurality of first pixels in a non-irradiation period of infrared light, in a first frame scanning period, and outputs a third signal obtained from the plurality of first pixels and a fourth signal obtained from the plurality of second pixels, in a second frame scanning period.

Provided are methods of detecting X-rays, a photographing methods using the X-ray detecting method and/or an X-ray detector using the methods. For example, one method of detecting X-rays includes radiating a first X-ray, removing, by a first X-ray detection unit, a first electric charge generated by the radiated first X-ray, and outputting, by a second X-ray detection unit adjacent to the first X-ray detection unit, a voltage corresponding to the first X-ray.

Photoelectric conversion device includes stacked first and second substrates. The first substrate includes pixel array, first joint portion arranged in the pixel array and connected to pixels in the pixel array, and power supply pad connected to the first joint portion. The second substrate includes readout circuit to read signal from the pixel array via signal line, and second joint portion jointed to the first joint portion. The readout circuit includes limiter circuit to limit amplitude of potential of the signal line. Power supply terminal of the limiter circuit is connected to the second joint portion, and power supply potential applied to the power supply pad is supplied to the pixels and supplied to the power supply terminal of the limiter circuit via the first and second joint portions.

An apparatus includes a bloom transistor frontend configured to receive an integrator output voltage and generate a comparator input voltage. The apparatus also includes a comparator configured to generate an output signal based on whether the comparator input voltage meets or exceeds a reference voltage. The bloom transistor frontend includes a first transistor configured to charge an input capacitance associated with the comparator in order to change the comparator input voltage. The bloom transistor frontend also includes a second transistor configured to discharge the input capacitance associated with the comparator in order to reset the comparator input voltage.

A method, apparatus and system are described providing a high dynamic range pixel. An integration period has multiple sub-integration periods during which charges are accumulated in a photosensor and repeatedly transferred to a storage node, where the charges are accumulated for later transfer to another storage node for output.

A pixel arrangement includes a photodiode, a reset transistor configured to be controlled by a reset signal and coupled to a reset input voltage, a transfer gate transistor configured to transfer charge from the photodiode to a node, wherein the transfer gate transistor is controlled by a transfer gate voltage, and a source follower transistor controlled by the voltage on the node and coupled to a source follower voltage. A capacitor is coupled between the node and an input voltage. During a read operation the input voltage is increased to boost the voltage at the node. The increased input voltage may, for example, be one the reset input voltage, said source follower voltage, said transfer gate voltage and a boosting voltage.

The present disclosure relates to an imaging device, a method for manufacturing an imaging device, and an electronic device capable of reducing light entering an electric-charge holding unit in a back-illuminated imaging device. An imaging device includes: a photoelectric conversion unit; an electric-charge holding unit; a semiconductor substrate; a wiring layer; an insulation film layer; a first light-shielding film; and a second light-shielding film. The insulation film layer, the first light-shielding film, and the wiring layer are stacked on a second surface of the semiconductor substrate. The second light-shielding film includes: a first light-shielding portion extending from the first surface of the semiconductor substrate to a middle of the semiconductor substrate; a second light-shielding portion penetrating the semiconductor substrate; and a third light-shielding portion covering a part of the first surface of the semiconductor substrate. The present technology is applicable to a CMOS image sensor, for example.

Imaging apparatus (20) includes a photosensitive medium (22) and a bias electrode (32), which is at least partially transparent, overlying the photosensitive medium. An array of pixel circuits (26) is formed on a semiconductor substrate (30). Each pixel circuit includes a pixel electrode (24) coupled to collect the charge carriers from the photosensitive medium; a readout circuit (75) configured to output a signal indicative of a quantity of the charge carriers collected by the pixel electrode; a skimming gate (48) coupled between the pixel electrode and the readout circuit; and a shutter gate (46) coupled in parallel with the skimming gate between a node (74) in the pixel circuit and a sink site. The shutter gate and the skimming gate are opened sequentially in each of a sequence of image frames so as to apply a global shutter to the array and then to read out the collected charge carriers via the skimming gate to the readout circuit.

An image sensor including a substrate, a trench isolation, a plurality of image sensing units, at least one phase detection unit, and an interconnection layer is provided. The trench isolation is in the substrate, and a plurality of active areas of the substrate are separated from each other by the trench isolation. The image sensing units and the at least one phase detection unit are in the active areas arranged in an array, and a sensing area of the at least one phase detection unit is smaller than a sensing area of each of the image sensing units. The interconnection layer is disposed on the image sensing units and the at least one phase detection unit. In addition, a method of fabricating an image sensor is also provided.