A system and method is provided for performing high dynamic range digital double sampling. More particularly, a CMOS image sensor is provided that includes a pixel array with each pixel sampling both dark and bright values for digital double sampling. After the sampled signals are digitized, a mean dark value is determined and each dark value is further fed to a lookup table that generates an output value taking into account whether the pixel has been saturated. In over exposed conditions, the lookup table will generate a negative value output to eliminate image artifacts. All three values are fed to adder logic circuit that subtracts the mean dark value and the lookup table output from the bright value. This resulting output is fed to a video viewer.

An imaging apparatus includes a pixel region including a plurality of pixels, and bias wiring laid on a light incident side of pixels to supply a bias from a power supply to the pixels in the pixel region via a second side defining the pixel region. The bias wiring includes first wiring portions and second wiring portions laid around the pixels. The first wiring portions are laid in a Y direction away from the second side, and the second wiring portions are laid in an X direction orthogonal to the Y direction. The first wiring portions include a light non-transmissive member. A resistance of the first wiring portion per pixel is smaller than that of the second wiring portion per pixel. A loss of light due to the second wiring portion is smaller than that of the light incident due to the first wiring portion.

An image sensor semiconductor device includes a first photodiode disposed in a semiconductor substrate and configured to generate charges in response to radiation, a first transistor disposed adjacent to the first photodiode, a floating diffusion region configured to store the generated charges, a reset transistor configured to reset the floating diffusion region, and a second transistor disposed over the substrate between the first photodiode and the reset transistor. The first transistor and the second transistor are configured to generate a first electric field and a second electric field, respectively, to move the charges generated by the first photodiode to the floating diffusion region.

An imaging element incorporates a reading portion, a storage portion, a processing portion, and an output portion. The reading portion reads out image data obtained by imaging from a photoelectric conversion element at a first frame rate. The storage portion stores the image data read out from the photoelectric conversion element. The processing portion processes the image data. The output portion outputs the image data processed by the processing portion at a second frame rate. The processing portion detects first image data indicating a specific image from the image data stored in the storage portion. The output portion outputs second image data based on image data different from the first image data detected by the processing portion in the image data of a plurality of frames. The second frame rate is a frame rate lower than the first frame rate.

Imagers and associated devices and systems are disclosed herein. In one embodiment, an imager includes a pixel array and control circuitry operably coupled to the pixel array. The pixel array includes an imaging pixel configured to produce a reset signal and a non-imaging pixel configured to produce a nominal reset signal. The control circuity is configured to produce an output signal based at least in part on one of (a) the nominal reset signal when distortion at the imaging pixel exceeds a threshold and (b) the reset signal when distortion does not exceed the threshold.

The present disclosure relates to a solid-state imaging device, a method for manufacturing the same, and an electronic apparatus capable of improving sensitivity while suppressing degradation of color mixture. The solid-state imaging device includes an anti-reflection portion having a moth-eye structure provided on a boundary surface on a light-receiving surface side of a photoelectric conversion region of each pixel arranged two-dimensionally, and an inter-pixel light-blocking portion provided below the boundary surface of the anti-reflection portion to block incident light. In addition, the photoelectric conversion region is a semiconductor region, and the inter-pixel light-blocking portion has a trench structure obtained by digging the semiconductor region in a depth direction at a pixel boundary. The techniques according to the present disclosure can be applied to, for example, a solid-state imaging device of a rear surface irradiation type.

Provided are a solid-state image-capturing element and an electronic device capable of reducing the capacitance by using a hollow region. At least a part of a region between an FD wiring connected to a floating diffusion and a wiring other than the FD wiring is a hollow region. The present disclosure can be applied to a CMOS image sensor having, for example, a floating diffusion, a transfer transistor, an amplifying transistor, a selection transistor, a reset transistor, and a photodiode.

An imaging device according to the present disclosure includes a plurality of pixels each including a first light-receiving element and a second light-receiving element, the plurality of pixels including a first pixel. The imaging device further includes a generating section that generates a first detection value on a basis of a light-receiving result by the first light-receiving element of each of the plurality of pixels, and generates a second detection value on a basis of a light-receiving result by the second light-receiving element of each of the plurality of pixels. The imaging device further includes a diagnosis section that performs a diagnosis processing on a basis of a detection ratio that is a ratio between the first detection value and the second detection value in the first pixel.

A moving image processing apparatus is configured to extract position information of a saturation region from a first frame, the saturation region including pixels each having at least a threshold pixel value that is associated with an afterimage being formed in a subsequent frame elapsed from the first frame. The moving image processing apparatus is configured to extract an afterimage region corresponding to the saturation region from the second frame, calculate motion information of the afterimage region based on motion information indicating motion between a second frame and a third frame, extract a candidate region that is matched to the afterimage region in the third frame based on the motion information, and correct the afterimage region based on the candidate region data.

A pixel structure and a method of reading charges generated by a radiation sensing element upon exposure thereof to radiation is presented. The pixel structure comprises at least two capacitors configured for integrating charge from a radiation sensing element, where an overflow transistor sets a predetermined threshold level by a static voltage on its control electrode. This allows charges generated in the radiation sensing element to be integrated in either the first capacitor for a level of charge generated by the radiation sensing element, while the level remains under a predetermined threshold level, or in the at least one further capacitor for a level of charge generated by the radiation sensing element when said level surpasses said predetermined threshold level. At least one merge switch is used for merging the charges of the first capacitor with the charges of the at least one further capacitor.