Patent classifications
H01L51/05
CARBON NANOTUBE MONOLAYER FILM, METHOD OF PREPARING THE SAME, AND ELECTRONIC DEVICE INCLUDING THE SAME
A method of preparing a carbon nanotube monolayer film includes applying a bifunctional hydrogen-bond linker onto a substrate to prepare a surface-treated substrate, mixing carbon nanotubes having a heteroatom-containing aromatic polymer coating film with a hydrophobic solvent to obtain a composition and contacting the surface-treated substrate with the composition, and heat-treating the surface-treated substrate contacting the composition.
Packing material, method for producing packing material, reading device, stored-article management system, disconnection detection device, unsealing detection label, and unsealing detection system
A package in an aspect of the present invention includes: a package body having a receiving cavity for receiving a cavity item; a sheet for sealing the receiving cavity; a conducting wire formed on the sheet so as to pass above the sealed opening portion of the receiving cavity; and a wireless communication device formed on the sheet so as to be connected to the conducting wire. The wireless communication device transmits a signal including information which differs between before and after the conducting wire together with the sheet is cut as a result of opening the receiving cavity. The information transmitted from the wireless communication device is read by a reader. The package and the reader are used for a cavity item management system.
Transistors with Channels Formed of Low-Dimensional Materials and Method Forming Same
A method includes forming a first low-dimensional layer over an isolation layer, forming a first insulator over the first low-dimensional layer, forming a second low-dimensional layer over the first insulator, forming a second insulator over the second low-dimensional layer, and patterning the first low-dimensional layer, the first insulator, the second low-dimensional layer, and the second insulator into a protruding fin. Remaining portions of the first low-dimensional layer, the first insulator, the second low-dimensional layer, and the second insulator form a first low-dimensional strip, a first insulator strip, a second low-dimensional strip, and a second insulator strip, respectively. A transistor is then formed based on the protruding fin.
LIGHT-EMITTING DEVICE AND ELECTRONIC APPARATUS INCLUDING SAME
A light-emitting device includes: a first electrode; a second electrode facing the first electrode; and an interlayer between the first electrode and the second electrode and including a first layer, wherein the first electrode has a work function value of about −5.5 eV to about −6.1 eV, and the interlayer includes a second layer doped with a non-lead-based perovskite compound.
SEMICONDUCTOR DEVICE INCLUDING RESISTANCE CHANGE LAYER WITH CARBON NANOSTRUCTURES
A semiconductor device according to an embodiment of the present disclosure includes a substrate, a resistance change layer disposed on the substrate and including a plurality of carbon nanostructures, a channel layer disposed on the resistance change layer, a gate electrode layer disposed on the channel layer, and a source electrode layer and a drain electrode layer disposed to contact portions of the channel layer.
π-conjugated boron compound, electronic device, and methods respectively for producing triarylborane and intermediate thereof
There are provided a π-conjugated boron compound, an electronic device containing an organic functional layer including the π-conjugated boron compound, a method for producing a triarylborane, and a method for producing a triarylborane intermediate. In the π-conjugated boron compound, a boron atom is bonded to three aromatic groups via three boron-carbon bonds. Bond distances of the three boron-carbon bonds are all 1.48 Å or less.
OFETs having multilayer organic semiconductor with high on/off ratio
An organic field effect transistor includes a channel structure having a photoalignment layer and an organic semiconductor layer disposed directly over the photoalignment layer, where a charge carrier mobility varies along a thickness direction of the channel structure. The channel structure may define an active area between a source and a drain of the transistor and may include alternating layers of at least two photoalignment layers and at least two organic semiconductor layers. Each photoalignment layer is configured to influence an orientation of molecules within an overlying organic semiconductor layer and hence impact the mobility of charge carriers within the device active area while also advantageously decreasing the OFF current of the device.
Two-dimensional carbon nanotube liquid crystal films for wafer-scale electronics
Methods of forming films of aligned carbon nanotubes on a substrate surface are provided. The films are deposited from carbon nanotubes that have been concentrated and confined at a two-dimensional liquid/liquid interface. The liquid/liquid interface is formed by a dispersion of organic material-coated carbon nanotubes that flows over the surface of an immiscible liquid within a flow channel. Within the interface, the carbon nanotubes self-organize via liquid crystal phenomena and globally align along the liquid flow direction. By translating the interface across the substrate, large-area, wafer-scale films of aligned carbon nanotubes can be deposited on the surface of the substrate in a continuous and scalable process.
DISPLAY DEVICE
A display device is provided. A first transistor, a second transistor, and a third transistor are disposed above the surface of a substrate. The first transistor includes a first semiconductor and a first gate electrode. The first semiconductor includes a silicon semiconductor. The first gate electrode overlaps the first semiconductor in view of the normal direction of the surface. The second transistor includes a second semiconductor including a first oxide semiconductor. The third transistor includes a third semiconductor and a third gate electrode. The third semiconductor includes a second oxide semiconductor. The third gate electrode overlaps the third semiconductor in view of the normal direction of the surface. A first electrode is disposed above and electrically connected to the third semiconductor. The first electrode overlaps the third gate electrode in a cross-sectional view of the display device.
THIN FILM TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME, DISPLAY DEVICE
A thin film transistor, a method for manufacturing the same and a display device are disclosed, the thin film transistor includes: a first electrode, a second electrode, an active layer and a flexible conductive layer located on a substrate, one of the first electrode and the second electrode is a source, and the other thereof is a drain; the active layer is electrically coupled with the first electrode, and an orthographic projection of the active layer on the substrate is within an orthographic projection of the first electrode on the substrate; the flexible conductive layer is located on a side of the active layer away from the first electrode, and electrically couples the active layer with the second electrode.